Y60KPE.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 Y60KPE 데이타시트 다운로드

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Features
n Center amplifying gate
n Metal case with ceramic insulator
n Low on-state and switching losses
Typical Applications
n AC controllers
n DC and AC motor control
n Controlled rectifiers
Y60KPE
PHASE CONTROL THYRISTOR
IT(AV)
VDRM/VRRM
ITSM
I2t
2026A
1100~1800V
30 KA
4500 103A2S
SYMBOL
CHARACTERISTIC
IT(AV)
Mean on-state current
TEST CONDITIONS
Tj(°C)
Min
VALUE
Type Max
180° half sine wave 50Hz
Double side cooled,
Ths=55°C
Ths=66°C
125
2026
1800
UNIT
A
VDRM
VRRM
IDRM
IRRM
ITSM
I2t
VTO
rT
VTM
dv/dt
Repetitive peak off-state voltage
Repetitive peak reverse voltage
VDRM&VRRM tp=10ms
VDSM&VRSM= VDRM&VRRM+100V
Repetitive peak current
Surge on-state current
I2T for fusing coordination
Threshold voltage
On-state slop resistance
Peak on-state voltage
VDM= VDRM
VRM= VRRM
10ms half sine wave
VR=0.6VRRM
ITM=4000A, F=28KN
Critical rate of rise of off-state voltage VDM=0.67VDRM
125 1100
125
125
125
125
125
1800
V
120 mA
30
4500
0.98
0.15
1.58
KA
A2s*103
V
m
V
1000
V/μs
di/dt
Irm
trr
Qrr
IGT
VGT
IH
VGD
Rth(j-h)
Fm
Tstg
Wt
Outline
Critical rate of rise of on-state current
VDM= 67%VDRM to2500A,
Gate pulse tr 0.5μs IGM=1.5A
Reverse recovery current
Reverse recovery time
Recovery charge
Gate trigger current
Gate trigger voltage
Holding current
Non-trigger gate voltage
Thermal resistance
Junction to heatsink
Mounting force
Stored temperature
W eight
ITM=1000A,tp=1000µs, di/dt=-20A/µs,
VR=50V
VA=12V, IA=1A
VDM=67%VDRM
At 1800 sine, double side cooled
Clamping force 28.0KN
KT54cT60
125 200 A/μs
125
40
25 0.8
20
165
18.5
1576
300
3.0
300
A
µs
µC
mA
V
mA
125 0.3
V
0.020 °C /W
21
-40
650
30
140
KN
°C
g
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Peak On-state VoltageYV6s0.KPPeEak On-state Current
4
3.5 TJ=125°C
3
2.5
2
1.5
1
0.5
100
1000
10000
100000
Instantaneous on-state currant,amperes
Fig.1
Y60KPE
Max. junction To heatsi0n.k0T2hermai Impedance Vs.Time
0.02
0.015
0.01
0.005
0
0.001
0.01
0.1
Time,seconds
Fig.2
1
10
5000
4500
4000
3500
3000
2500
Max. Power DisYsi6p0atKioPnEV2s.3Mean On-state Current
180
0 180
Conduction Angle
120
90
60
30
2000
1500
1000
500
0
0
550
1100
1650
2200
Mean on-state current,amperes
Fig.3
Max. heatsink TemperatureYV6s0.MKPeaEn On-state Current
140
120
0 180
100
Conduction Angle
80
60
40
20
0
0
30 60 90 120 180
400 800 1200 1600 2000 2400 2800
Mean on-state current,amperes
Fig.4
3000
2400
1800
Max. Power DisYs6ip0aKtPioEn V2s3.Mean On-state Current
360
Conduction Angle
180
120
90
270 DC
60
1200
30
600
0
0 300 600 900 1200 1500 1800 2100
Mean on-state current,amperes
Max. heatsink TempeYra6t0uKrePVEs.2M2ean On-state Current
140
120 360
100
Conduction Angle
80
60
40
20
0
0
30 60 90 120 180 270 DC
1000
2000
3000
Mean on-state current,amperes
4000
Fig.5
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Fig.6

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35
30
25
20
15
10
5
1
Surge Cu3rr0ent Vs.Cycles
10
Cycles at 50Hz
Fig.7
100
Gate characteristic at 25°C junction temperature
18
16
14 PGM=120W
12
max.
(100μs spulse)
10
8
6 min.
4 PG2W
2
0
0 4 8 12 16 20
Gate current,IGTA
Fig.9
Outline:
5000
4500
4000
3500
3000
2500
2000
1500
1000
1
I42t50V0-s-.3T0ime
Y60KPE
Time,m.seconds
Fig.8
10
Gate Trigger Zo3nVe,3a0t0vMaAries temperature
4.5
-30°C
4
-10°C
3.5
25°C
3
2.5 125°C
2
1.5
1
0.5
0
0 100 200 300 400 500
Gate current,IGTmA
Fig.10
600
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