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Chip Integration Technology Corporation
T0501MB
Low Capacitance ESD Protection Device
Features
Transient protection for high-speed data lines
IEC 61000-4-2 (ESD) ±30kV (Air)
±30kV (Contact)
IEC 61000-4-4 (EFT) 40A (5/50 ns)
Cable Discharge Event (CDE)
Package optimized for high-speed lines
Ultra-small package (1.0mm x 0.6mm x 0.55mm)
Protects one data, control or power line
Low capacitance: 12pF (Typical)
Low leakage current: 0.1 uA@VRWM (Typical)
Low clamping voltage
Each I/O pin can withstand over 1000 ESD
strikes for ±8 kV contact discharge
Description
T0501MB is a low-capacitance Transient Voltage
Suppressor (TVS) desigend to provide electrostatic
discharge (ESD) protection for data, control or power
line. With typical capacitance of 12pF only,
T0501MB is designed to protect parasitic-sensitive
systems against over-voltage and over-current
transient events. It complies with IEC 61000-4-2
(ESD), Level 4 (±15 kV air, ±8kV contact discharge),
IEC 61000-4-4 (electrical fast transient - EFT) (40A,
5/50 ns), very fast charged device model (CDM) ESD
and cable discharge event (CDE), etc.
T0501MB uses ultra-small DFN1006 package. Each
T0501MB device can protect one data line. It offers
system designers flexibility to protect single data line
where space is a premium concern.
Applications
Portable Electronics
Desktops, Servers and Notebooks
Cellular Phones
MP3 Ports
Digital Camera Ports
Subscriber Identity Module (SIM) card
Mechanical Characteristics
DFN1006 package
Flammability Rating: UL 94V-0
Marking: Part number, date code
Packaging: Tape and Reel
Circuit Diagram
I/O_1
I/O_2
Pin Configuration
DFN1006
(Top View)
Document ID : DS-22V14
1
Revised Date : 2017/05/02
Revision : C

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Chip Integration Technology Corporation
T0501MB
Low Capacitance ESD Protection Device
Absolute Maximum Rating
Symbol
V ESD
TOPT
TSTG
Parameter
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
Operating Temperature
Storage Temperature
Electrical Characteristics (T=25 oC)
Symbol
Parameter
VRWM Nominal Reverse Working Voltage
IR Reverse Leakage Current @ VRWM
VBR Reverse Breakdown Voltage @ IT
IT Test Current for Reverse Breakdown
VC Clamping Voltage @ I PP
IPP Peak Pulse Current
CESD Parasitic Capacitance
VR Reverse Voltage
f Small Signal Frequency
Value
±30
±30
-55 /+125
-55 /+150
Units
kV
oC
oC
I
I PP
VC VBR VRWM
IIRT
IIRT
VRWM VBR VC V
I PP
Bi-Directional TVS
Symbol
V RWM
IR
V BR
VC
VC
C ESD
Test Condition
VRWM = 5V, T = 25 C
Between I/O1 and I/O2
IT = 1mA
Between I/O1 and I/O2
IPP = 1A, tp= 8/20μs
Between I/O1 and I/O2
IPP = 4A, tp= 8/20μs
Between I/O1 and I/O2
VR = 0V, f = 1MHz
Between I/O1 and I/O2
Minimum Typical Maximum Units
5.0 V
0.1 1.0 μA
5.5 6.0 8.0 V
10 V
15 V
12 15 pF
Document ID : DS-22V14
2
Revised Date : 2017/05/02
Revision : C

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Chip Integration Technology Corporation
T0501MB
Low Capacitance ESD Protection Device
TLP Measurement of I/O _1 to I/O _2 Voltage Sweeping of I/O_1 to I/O _2
10
9
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16
TLP Voltage (V)
0.12
0.10
0.08
0.06
0.04
0.02
0.00
-0.02
-0.04
-0.06
-0.08
-0.10
-0.12
-8 -6 -4 -2
0
2
4
6
8
Voltage (V)
Capacitance vs. Voltage of I/O_1 to I/O _2 (f = 1MHz)
Capacitance vs. Reverse Voltage
Normalized Capacitance vs. Reverse Voltage
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
0
1234
Reverse Voltage (V)
5
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
1234
Reverse Voltage (V)
5
ESD Clamping of I/O_1 to I/O_2
(+8kV Contact per IEC 61000 -4-2)
ESD Clamping of I/O_1 to I/O_2
(-8kV Contact per IEC 61000 -4-2)
70.0
60.0
50.0
40.0
30.0
20.0
10.0
0.0
-10.0
-20.0
-50
0
50 100 150 200
Time (ns)
20.0
10.0
0.0
-10.0
-20.0
-30.0
-40.0
-50.0
-60.0
-70.0
-50
0
50 100 150 200
Time (ns)
Document ID : DS-22V14
3
Revised Date : 2017/05/02
Revision : C

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Chip Integration Technology Corporation
Package Outline
DFN1006 package
2 leads, very small package
MSL-1
T0501MB
Low Capacitance ESD Protection Device
Package Dimensions (Controlling dimensions are in millimeters)
Symbol
A
A1
A2
E
D
b
b1
L1
L2
Dimensions In Millimeters
Minimum
Maximum
0.450
0.550
0.15 REF
0.000
0.050
0.950
1.050
0.550
0.650
0.250
0.350
0.150
0.250
0.300
0.400
0.250
0.350
Dimensions In Inches
Minimum
Maximum
0.018
0.022
0.000
0.037
0.022
0.010
0.006
0.012
0.010
0.002
0.041
0.026
0.014
0.010
0.016
0.014
Document ID : DS-22V14
4
Revised Date : 2017/05/02
Revision : C

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Chip Integration Technology Corporation
T0501MB
Low Capacitance ESD Protection Device
Tape and Reel Specification
T
Top
Cover
Tape
3o REF
W
P0 P2
A0
B0
K0 P
Φ2: 1.55±0.05 Device Orientation in Tape
E
F
Φ: 0.40±0.05
Pin1 Location
Symbol
W
A0
B0
K0
E
F P P0 P2 T
Dimensions
(mm)
8.00±0.1
0.7±0.05
1.15±0.05
0.55±0.05
1.75±0.1
3.5±0.05
2.0±0.1
4.0±0.1
2.0±0.05 0.2±0.05
W1
S
R
MN
K
H
W
Symbol Reel Size M
N W W1 H S K
R
Dimensions
(mm)
Φ178
178.0±1.0 60.0±1.0 11.5±0.5 9.0±0.5 13.0±0.5 2.0±0.1 11.0±0.2 1.0±0.05
Document ID : DS-22V14
5
Revised Date : 2017/05/02
Revision : C