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Chip Integration Technology Corporation
T0514TP
Ultra-Low Capacitance ESD Protection Device
Features
Applications
Transient protection for high-speed data lines
Serial ATA
IEC 61000-4-2 (ESD) ±25kV (Air)
PCI Express
±17kV (Contact)
Desktops, Servers and Notebooks
IEC 61000-4-4 (EFT) 40A (5/50 ns)
MDDI Ports
Cable Discharge Event (CDE)
USB 2.0/3.0/3.1 Power and Data Line Protection
Package optimized for high-speed lines
Display Ports
Ultra-small package (2.5mmx1.0mmx0.55mm) High Definition Multi-Media Interface (HDMI)
Protects four data lines
Digital Visual Interfaces (DVI)
Low capacitance: 0.6pF for each channel
Low leakage current: 0.1uA@V RWM (Typical)
Low clamping voltage
Each I/O pin can withstand over 1000 ESD
strikes for ±8kV contact discharge
RoHS compliant
Mechanical Characteristics
DFN2510-10L package
Flammability Rating: UL 94V-0
Marking: Part number
Packaging: Tape and Reel
Description
T0514TP is an ultra-low capacitance Transient
Voltage Suppressor (TVS) designed to provide
electrostatic discharge (ESD) protection for high-
speed data interfaces. With typical capacitance of
0.6 pF only, T0514TP is designed to protect
parasitic-sensitive systems against over-voltage and
over-current transient events. It complies with IEC
61000-4-2 (ESD), Level 4 (±15kV air, ±8kV contact
discharge), IEC 61000-4-4 (electrical fast transient -
EFT) (40A,5/50 ns), very fast charged device model
(CDM) ESD and cable discharge event (CDE), etc.
T0514TP uses ultra-small DFN2510-10L package.
Each T0514TP device can protect four high-speed
data lines The combined features of ultra-low
capacitance, ultra-small size and high ESD robustness
make T0514TP ideal for high-speed data ports and
high-frequency lines (e.g.,HDMI & DVI) application.s.
The low camping voltage of the T0514TP guarantees
a minimum stress on the protected IC.
Circuit Diagram
I/O_2
I/O_4
I/O_1
GND
Pin Configuration
10 9
8
I/O_3
7
1234
I/O_1
I/O_2
GND
I/O_3
DFN2510-10L
(Top View)
6
5
I/O_4
Document ID : DS-22V17
Revised Date : 2017/07/20
1 Revision : C

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Chip Integration Technology Corporation
T0514TP
Ultra-Low Capacitance ESD Protection Device
Absolute Maximum Rating
Symbol
V ESD
TOPT
TSTG
Parameter
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
Operating Temperature
Storage Temperature
Electrical Characteristics (T = 25 oC)
Symbol
Parameter
V RWM
IR
VBR
IT
VC
IPP
CESD
VR
f
Nominal Reverse Working Voltage
Reverse Leakage Current @VRWM
Reverse Breakdown Voltage @I T
Test Current for Reverse Breakdown
Clamping Voltage @ IPP
Maximum Peak Pulse Current
Parasitic Capacitance
Reverse Voltage
Small Signal Frequency
IF Forward Current
VF Forward Voltage @IF
Value
±25
±17
-55/+125
-55/+150
Units
kV
oC
oC
Current
IF
vF vBRvRWM
IR vF
IT
IPP
Uni-Directional TVS
Symbol
V RWM
IR
V BR
VC
CESD
CESD
Test Condition
VRWM = 5V,T = 25 C
Between I/O and GND
IT = 1mA
Between I/O and GND
IPP = 1A, tp= 8/20μs
Between I/O and GND
VR = 0V, f = 1MHz
Between I/O and GND
VR = 0V, f = 1MHz
Between I/O and I/O
Minimum
6.0
Typical Maximum
5.0
0.1 1.0
8.0 10.0
12
0.6 0.8
0.05
0.08
Units
V
μA
V
V
pF
pF
Document ID : DS-22V17
Revised Date : 2017/07/20
2 Revision : C

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Chip Integration Technology Corporation
T0514TP
Ultra-Low Capacitance ESD Protection Device
Voltage Sweeping of I/O to GND
0.12
0.10
0.08
0.06
0.04
0.02
0.00
-0.02
-0.04
-0.06
-0.08
-0.10
-0.12
-2 -1 0 1 2 3 4 5 6 7 8 9
Voltage (V)
Insertion Loss S21 of I/O to GND
5.0
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
1.0E+06
1.0E+07
1.0E+08
1.0E+09
Frequency (Hz)
1.0E+10
Capacitance vs. Voltage of I/O to GND (f = 1MHz)
Capacitance vs. Reverse Voltage
Normalized Capacitance vs. Reverse Voltage
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
12 3 4
Reverse Voltage (V)
5
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
12 34
Reverse Voltage (V)
5
ESD Clamping of I/O to GND
(+8kV Contact per IEC 61000-4-2)
ESD Clamping of I/O to GND
(-8kV Contact per IEC 61000-4-2)
70.0
60.0
50.0
40.0
30.0
20.0
10.0
0.0
-10.0
-20.0
-50
0
50 100 150 200
Time (ns)
20.0
10.0
0.0
-10.0
-20.0
-30.0
-40.0
-50.0
-60.0
-70.0
-50
0
50 100 150 200
Time (ns)
Document ID : DS-22V17
Revised Date : 2017/07/20
3 Revision : C

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Chip Integration Technology Corporation
T0514TP
Ultra-Low Capacitance ESD Protection Device
Application Information
Pin Connection in PCB
T0514TP provides ESD protection for four data
lines simultaneously. The pin connection is shown
in the figure below.
Four parallel data lines, from inner IC to I/O port
connector, coule connect to T0514TP four I/O pins
directly. Pin 3&8 of T0514TP is the GND pin, which
should connect to the GND of PCB. The wire should
be as short as possible in order to minimize the
parasitic inductance.
To I/O Port
Connector
Date lines
I/O1
I/O2
To Inner IC
Date lines
PCB Layout Guidelines
For optimum ESD protection and the whole circuit
performance, the following PCB layout guidelines are
recommended:
T0514TP GND pin to the PCB GND rail path
should be as short as possible. It could reduce the
ESD transient return path to GND.
The vias connecting T0514TP GND pins to the
PCB GND should be wid.e
Place T0514TP as close to the connector port as
possible. It could reduce the parasitic inductance
and restrict ESD coupling into adjacent traces.
Avoid running critical signals near board edges.
GND
To I/O Port
Connector
Date lines
I/O3
I/O4
To Inner IC
Date lines
Figure 1 T0514TP pin connection in PCB
Document ID : DS-22V17
Revised Date : 2017/07/20
4 Revision : C

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Chip Integration Technology Corporation
T0514TP
Ultra-Low Capacitance ESD Protection Device
Application Information
TMDS_D2+
TMDS_D2-
TMDS_D1+
TMDS_D1-
TMDS_D0+
TMDS_D0-
TMDS_CLK+
TMDS_CLK-
CEC
SCL
SDA
HTP_D
TMDS_D2+
T0514TP
TMDS_D2-
TMDS_D1+
TMDS_D1-
TMDS_D0+
T0514TP
TMDS_D0-
TMDS_CLK+
T0514TL
TMDS_CLK-
CEC
NC
SCL
SDA
GND
+5V
HTP_D
Figure 2 Layout Top View for HDMI Interface With T0514TP & T0514TL
Document ID : DS-22V17
Revised Date : 2017/07/20
5 Revision : C