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M02N601D
600V N-Channel General Purpose Switching Device Applications
Features
600V, 2.0A, RDS(on) = maximum 5Ω@VGS = 10V.
100% avalanche, EAS tested.
Suffix "G" indicates Halogen-free part, ex.M02N601DG.
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : Molded plastic, DPAK / TO-252.
Lead : Solder plated, solderable per MIL-STD-750,
Method 2026.
Polarity: Indicated by cathode band.
Mounting Position : Any.
Weight : Approximated 0.34 gram.
Outline
DPAK(TO-252)
0.067(1.70)
0.051(1.30)
0.264(6.70)
0.248(6.30)
0.205(5.20)
0.189(4.80)
D
0.224(5.70)
0.209(5.30)
GS
0.106(2.70)
0.091(2.30)
0.031(0.80)
0.016(0.40)
Drain
0.098(2.50)
0.083(2.10)
0.098(2.50)
0.083(2.10)
0.028(0.70)
0.012(0.30)
0.028(0.70)
0.012(0.30)
0.055(1.40)
0.039(1.00)
Gate
Source
Dimensions in inches and (millimeters)
Maximum ratings
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
CONDITIONS
Symbol
M02N601D
Drain to source voltage
Gate-source voltage
Drain current-continue
-pulsed
Allowable power disspipation
PW < 10us, duty cycle < 1%
TC = 25OC
Derate above25OC
VDSS
VGSS
ID
IDP
PD
600
±30
2
8
31
0.25
Channel temperature
Storage thermal
Avalanche current(2)
Avalanche energy(single pulse)(1)
TCH
TSTG
I AV
EAS
150
-55 ~ +150
2
61
Note: 1.VDD = 50V, L = 20mH, IAV = 2A, RG = 25Ω.
2.Repetitive rating : pulse width limited by maximum junction temperature.
UNIT
V
A
W
W/OC
OC
OC
A
mJ
Document ID : DS-22M53
1 Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C

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M02N601D
600V N-Channel General Purpose Switching Device Applications
Electrical characteristics
(AT TA=25oC unless otherwise noted)
PARAMETER
Drain-to-source breakdown voltage
Zero-gate voltage drain current
Gate-to-source leakage current
Cutoff voltage
Forward transfer admittance
Static drain-to-source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate source charge
Gate drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fail time
Diode forward voltage
CONDITIONS
ID = 250uA, VGS = 0V
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = VGS, ID = 250uA
VDS = 40V, ID = 1.0A
ID = 1.0A, VGS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDS = 25V, VGS = 0V, f = 1MHz
VDS = 25V, VGS = 0V, f = 1MHz
VDS = 480V, ID = 2.0A, VGS = 10V
VGS = 10V, VDD = 300V, ID = 2.0A
RGS = 25Ω
IS = 1.0A, VGS = 0V
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
l Yfs l
RDS(on)
Ciss
Coss
Crss
QG
QGS
QGD
td(on)
tr
td(off)
tf
VSD
MIN. TYP. MAX.
600
10
±100
24
1.0
4.0 5.0
356
31
4.0
9.5
2.3
4.7
11.5
14.3
23
8.3
1.4
UNIT
V
uA
nA
V
S
Ω
pF
pF
pF
nC
ns
V
Document ID : DS-22M53
2 Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C

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M02N601D
600V N-Channel General Purpose Switching Device Applications
Rating and characteristic curves
Fig 1.ON-REGION CHARACTERISTICS
VDD
Top : 15.0V
10.0V
8.0V
1 7.0V
6.5V
5.5V
Bottom : 5.0V
0.1
0.01
0.1
250us pulse test
TC = 25OC
1 10
VDS, DRAIN-SOURCE VOLTAGE(V)
Fig 3.ON-RESISTANCE VARIATION VS
18 DRAIN CURRENT AND GATE VOLTAGE
15
VGS = 10V
12
9
6
VGS = 20V
3
TJ = 25OC
00 1 2 3 4 5 6
ID, DRAIN CURRENT(A)
Fig 5.CAPACITANCE CHARACTERISTICS
800
600
400
200
0 0.1
Ciss
Coss
Crss
VGS = 0V
f = 1MHz
1 10
VDS, DRAIN-SOURCE VOLTAGE(V)
Fig 2.TRANSFER CHARACTERISTICS
150OC
1
25OC
-55OC
250us pulse test
VDS = 40V
0.1
2
468
VGS, GATE-SOURCE VOLTAGE(V)
10
Fig 4.BODY DIODE FORWARD VOLTAGE VARIATION
WITH SOURCE CURRENT AND TEMPERATURE
1
150OC
25OC
0.1
0.2
250us pulse test
VSD = 0V
0.4 0.6 0.8 1.0 1.2
VSD, SOURCE-DRAIN VOLTAGE(V)
1.4
Fig 6.GATE CHARGE CHARACTERISTICS
12
VDS = 120V
10
VDS = 300V
8 VDS = 480V
6
4
2
0
04
ID = 2.0A
8 12 16
QG, TOTAL GATE CHARGE(nC)
Document ID : DS-22M53
3 Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C

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M02N601D
600V N-Channel General Purpose Switching Device Applications
Rating and characteristic curves
Fig 7.BREAKDOWN VOLTAGE VARIATION
VS TEMPERATURE
1.2
1.1
1.0
0.9
VGS = 0V
ID = 250uA
0.8
-100
-50 0 50 100 150
TJ, JUNCTION TEMPERATURE(OC)
200
Fig 9.MAXIMUM SAFE OPERATING AREA
FOR M02N601D1
Cperation in this area
is umited by RDS(on)
10
100us
1ms
1 10ms
100ms
DC
0.1
TC = 25OC
TJ = 150OC
single pulse
0.01 1
10 100 1000
VDS, DRAIN-SOURCE VOLTAGE(V)
Fig 8.ON-RESISTANCE VARIATION
3.0
2.5
2.0
1.5
1.0
VGS = 10V
ID = 1.0A
0.5
0
-100
-50 0 50 100 150
TJ, JUNCTION TEMPERATURE(OC)
200
Fig 10.MAXIMUM DRAIN CURRENT VS
CASE TEMPERATURE
2
1.5
1.2
0.8
0.4
0
25
50 75 100 125
TC, CASE TEMPERATURE(OC)
150
Fig 11.THRNSIENT THERMAL RESPONSE CURVE FOR M02N601D1
D = 0.5
0.2
1
0.1
0.05
0.02
0.1 0.01
0.01
0.00001
single pulse
0.0001
0.001
0.01
DUTY FACTOR = t1 / t2
PDM
t1
t2
0.1 1
10
t1, SQUARE WAVE PULSE DURATION(S)
Document ID : DS-22M53
4 Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C

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M02N601D
600V N-Channel General Purpose Switching Device Applications
DPAK(TO-252) foot print
A
B
C
G
F
D
E
ABCDE FG
0.276 (7.00) 0.457 (11.60) 0.272 (6.90) 0.059 (1.50) 0.091 (2.30) 0.098 (2.50) 0.276 (7.00)
Dimensions in inches and (millimeters)
CITC reserves the right to make changes to this document and its products and specifications at any
time without notice.
Customers should obtain and confirm the latest product information and specifications before final
design, purchase or use.
CITC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does CITC assume any liability for application assistance or customer product
design.
CITC does not warrant or accept any liability with products which are purchased or used for any
unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of CITC.
CITC products are not authorized for use as critical components in life support devices or systems
without express written approval of CITC.
http://www.citcorp.com.tw/
Tel:886-3-5600628
Fax:886-3-5600636
Add:Rm. 3, 2F., No.32, Taiyuan St., Zhubei City, Hsinchu County 302, Taiwan (R.O.C.)
5
Document ID : DS-22M53
Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C