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High-power Super Fast Rectifier
Chip Integration Technology Corporation
ETF8005 THRU ETF810
8.0 Amperes Super High Power Super Fast Rectifiers
VOLTAGE : 50 TO 1000Volts
Features
Outline
• High current capability, low forward voltage drop.
• High surge capability.
• Superfast recovery time for switching mode application.
Glass passivated chip junction.
• Suffix "G" indicates Halogen free parts, ex. ΕΤF8005G.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
ITO-220AC
0.405(10.27)
0.383(9.72)
0.188(4.77)
0.172(4.36)
0.112(2.84)
0.100(2.54)
0.04(1.0)
MIN
1
0.350(8.89)
0.330(8.38)
2
0.600(15.5)
0.580(14.5)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC ITO-220AC molded plastic body over
passivated chip.
Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
Polarity: Color band denotes cathode end.
Mounting Position : Any.
Weight : Approximated 2.24 gram.
0.051(1.30)
0.047(1.20)
0.037(0.94)
0.027(0.69)
0.560(14.22)
0.530(13.46)
0.205(5.20)
0.189(4.80)
0.027(0.68)MAX
PIN 1
PIN 2
CASE
Dimensions in inches and (millimeters)
PIN 1
PIN 2
CASE
Case Negative Suffix "R"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Making code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward Voltage
Maximum reverse recovery time(1)
Operating Temperature
@ TJ = 25OC
Note : 1. IF = 0.5A, IR = 1.0A , IRR = 0.25A
Symbol ETF8005 ETF801 ETF802 ETF804 ETF806 ETF808 ETF810
ETF8005 ETF801 ETF802 ETF804 ETF806 ETF808 ETF810
VRRM
VRMS
VDC
VF
Trr
TJ
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
0.95
1.30
1.70
35 50
-50 ~ +150
UNIT
V
V
ns
OC
Parameter
Forward rectified current
Forward surge current
Reverse current
Typical junction capacitance
Conditions
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TA = 25OC
VR = VRRM TA = 125OC
f=1MHz and applied 4V DC reverse voltage
Symbol
IO
IFSM
MIN.
IR
CJ
TYP.
80
MAX.
8.0
125
1.0
300
UNIT
A
A
uA
pF
http://www.citcorp.com.tw/
TEL:886-3-6565228
FAX:886-3-6565091
1
Document ID : DS-11E25
Issued Date : 2010/05/05
Revised Date : 2010/10/08
Revision : B

No Preview Available !

High-power Super Fast Rectifier
Chip Integration Technology Corporation
ETF8005 THRU ETF810
8.0 Amperes Super High Power Super Fast Rectifiers
VOLTAGE : 50 TO 1000Volts
Rating and characteristic curves
FIG.1- TEST CIRCUIT DIAGRAM AND
REVERSE RECOVERY TIME CHARACTERISTIC
50Ω
NONINDUCTIVE
10Ω
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
()
D.U.T.
1Ω
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
()
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
trr
|
|
|
|
|
|
|
|
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
12
10
8.0
6.0
4.0
2.0
0
0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.375"(9.5mm) Lead Length
25 50 75 100 125 150
AMBIENT TEMPERATURE,( C)
FIG. 3 - TYPICAL INSTANTANEOUR FORWARD
CHARACTERISTICS
100
TJ = 25OC
ETF8005~ETF802
10
ETF804
1.0
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
50
TJ=150OC
10
3.0 TJ=100OC
1.0
0.1
0.01
0.4
ETF806~ETF810
pulse width = 300us
1% duty cycle
0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
TJ=25OC
0.1
.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
150
120
90
60
30
0
1
FIG.5-MAXIMUM NON-REPETITIVE
TJ=25 C
8.3ms Single Half
Sine Wave
JEDEC method
5 10
NUMBER OF CYCLES AT 60Hz
50
100
140
120
100
80
60
40
20
0
.01
FIG.6-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
http://www.citcorp.com.tw/
TEL:886-3-6565228
FAX:886-3-6565091
2
Document ID : DS-11E25
Issued Date : 2010/05/05
Revised Date : 2010/10/08
Revision : B