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FNK6585D
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK6585D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =65V,ID =85A
RDS(ON) < 8.6mΩ @ VGS=10V
(Typ:6.8mΩ)
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
To-263 Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK6585D
FNK6585D
TO-263
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
65
±20
85
62
340
160
1.1
172
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
FNK-Semiconductor
1/7
Nov.2016.Rev.1.0

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Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
FNK6585D
RθJC
0.9 ℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=65V,VGS=0V
Gate-Body Leakage Current
On Characteristics (Note 3)
IGSS VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
RDS(ON)
gFS
VGS=10V, ID=30A
VDS=10V,ID=100A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
VDD=30V,ID=2A,RL=15Ω
VGS=10V,RG=2.5Ω
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=30V,ID=30A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=90A
IS
trr TJ = 25°C, IF =90A
Qrr di/dt = 100A/μs(Note3)
Min Typ Max
65 -
-
--
1
- - ±100
2 2.9
- 6.8
25 -
4
8.6
-
- 3225
- 360
- 285
-
-
-
- 15
- 11
- 52
- 13
- 94
- 16
- 24
-
-
-
-
-
-
-
- - 1.2
- - 90
- 33
- 54
Unit
V
μA
nA
V
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=35V,VG=10V,L=0.5mH,Rg=25Ω
FNK-Semiconductor
2/7
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Test Circuit
1) EAS test Circuit
2) Gate charge test Circuit
3) Switch Time Test Circuit
FNK6585D
FNK-Semiconductor
3/7
Nov.2016.Rev.1.0

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Typical Electrical and Thermal Characteristics (Curves)
FNK6585D
Vds Drain-Source Voltage (V)
Figure 1 Output Characteristics
TJ-Junction Temperature(℃)
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Figure 2 Transfer Characteristics
Qg Gate Charge (nC)
Figure 5 Gate Charge
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
FNK-Semiconductor
4/7
Nov.2016.Rev.1.0

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FNK6585D
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 Current vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
FNK-Semiconductor
5/7
Nov.2016.Rev.1.0