JR0805A.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 JR0805A 데이타시트 다운로드

No Preview Available !

JIEJIE MICROELECTRONICS CO. , Ltd
JR0805 Series Sensitive gate SCRs
Rev.3.0
DESCRIPTION:
Because of highly sensitive triggering levels, the
JR0805 SCR series are suitable for all applications
where the available gate current is limited, such as
hair straighteners and flame igniters.
JR0805A provides insulation voltage rated at 2500V
RMS from all three terminals to external heatsink.
2
1
3
TO-252
1 2 3 TO-251
MAIN FEATURES
Symbol
IT(RMS)
IGT
VTM
Value
8
200
1.55
Unit
A
μA
V
1 2 3 TO-220A 1 2 3 TO-220B
Insulated
Non-Insulated
A(2) K(1)
RGK
G(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Storage junction temperature range
Tstg
Operating junction temperature range
Repetitive peak off-state voltage
Tj
VDRM
Repetitive peak reverse voltage
TO-220A(Ins)
(TC=95)
RMS on-state current
TO-220B(Non-Ins)
(TC=100)
TO-251/ TO-252
(TC=90)
Non repetitive surge peak on-state current
(tp=10ms)
I2t value for fusing (tp=10ms)
VRRM
IT(RMS)
ITSM
I2t
Critical rate of rise of on-state current
Peak gate current (tp=20μs, Tj=110)
Peak gate power (tp=20μs, Tj=110)
dI/dt
IGM
PGM
TEL+86-513-83639777
- 1 / 5-
Value
-40-150
-40-110
600
600
Unit
V
V
8A
70
24.5
50
4
2
A
A2s
As
A
W
http://www.jjwdz.com

No Preview Available !

JR0805 Series
JieJie Microelectronics CO. , Ltd
Average gate power dissipation(Tj=110)
PG(AV)
1
W
ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified)
Symbol
Test Condition
MIN.
Value
TYP.
MAX.
IGT
VGT
VGD
IL
IH
dV/dt
VD=12V RL=140Ω
VD=VDRM Tj=110
IG=1.2 IGT
IT=0.05A
VD=2/3VDRM Tj=110
RGK=1KΩ
- - 200
- - 0.8
0.2 -
-
- -6
- -5
10 - -
Unit
μA
V
V
mA
mA
Vs
STATIC CHARACTERISTICS
Symbol
VTM
IDRM
IRRM
Parameter
ITM=16A tp=380μs Tj=25
VD=VDRM VR=VRRM
Tj=25
Tj=110
Value(MAX)
1.55
5
500
Unit
V
μA
μA
THERMAL RESISTANCES
Symbol
Rth(j-c)
Parameter
TO-220A(Ins)
junction to case
TO-220B(Non-Ins)
TO-251/ TO-252
Value
17
15
20
Unit
/W
ORDERING INFORMATION
J R 08
JieJie Microelectronics Co.,Ltd
Sensitive gate SCRs
IT(RMS):8A
05 H
A:TO-220A(Ins)
B:TO-220B(Non-Ins)
H:TO-251 K:TO-252
05: IGT 200μA
TEL+86-513-83639777
- 2 / 5-
http://www.jjwdz.com

No Preview Available !

JR0805 Series
PACKAGE MECHANICAL DATA
EA
B2 C2
B3
GB
C
A2
TO-251
JieJie Microelectronics CO. , Ltd
Dimensions
Ref. Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 2.20
2.40 0.086
0.095
A2 0.90
1.20 0.035
0.047
B 0.55
0.65 0.022
0.026
B2 5.10
5.40 0.200
0.213
B3 0.76
0.85 0.030
0.033
C 0.45
0.62 0.018
0.024
C2 0.48
0.62 0.019
0.024
D 6.00
6.20 0.236
0.244
E 6.40
6.70 0.252
0.264
G 2.30
0.091
H 16.0
17.0 0.630
0.669
L 8.90
9.40 0.350
0.370
L1 1.80
1.90 0.071
0.075
L2 1.37
1.50 0.054
0.059
V1 4°
EA
B2 C2
B
G
A2
C
V2
TO-252
Dimensions
Ref. Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 2.20
2.40 0.086
0.095
A2 0.03
0.23 0.001
0.009
B 0.55
0.65 0.022
0.026
B2 5.10
5.40 0.200
0.213
C 0.45
0.62 0.018
0.024
C2 0.48
0.62 0.019
0.024
D 6.00
6.20 0.236
0.244
E 6.40
6.70 0.252
0.264
G 4.40
4.70 0.173
0.185
H 9.35
10.6 0.368
0.417
L1 1.30
1.70 0.051
0.067
L2 1.37
1.50 0.054
0.059
V1 4°
V2 0°
8° 0°
TEL+86-513-83639777
- 3 / 5-
http://www.jjwdz.com

No Preview Available !

JR0805 Series
PACKAGE MECHANICAL DATA
E
Φ
Max
3.8mm
C2
A
L2
B
G
TO-220A Ins
C3
C
JieJie Microelectronics CO. , Ltd
Dimensions
Ref. Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 4.40
4.60 0.173
0.181
B 0.61
0.88 0.024
0.035
C 0.46
0.70 0.018
0.028
C2 1.21
1.32 0.048
0.052
C3 2.40
2.72 0.094
0.107
D 8.60
9.70 0.339
0.382
E 9.80
10.4 0.386
0.409
F 6.55
6.95 0.258
0.274
G 2.54
0.1
H 28.0
29.8 1.102
1.173
L1 3.75
0.148
L2 1.14
1.70 0.045
0.067
L3 2.65
2.95 0.104
0.116
V1 45°
45°
E
Max 3.8mm
A
Φ C2
JIE
L2
C3
B
G
TO-220B Non-Ins
C
Dimensions
Ref. Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 4.40
4.60 0.173
0.181
B 0.61
0.88 0.024
0.035
C 0.46
0.70 0.018
0.028
C2 1.21
1.32 0.048
0.052
C3 2.40
2.72 0.094
0.107
D 8.60
9.70 0.339
0.382
E 9.60
10.4 0.378
0.409
F 6.20
6.60 0.244
0.260
G 2.54
0.1
H 28.0
29.8 1.102
1.173
L1 3.75
0.148
L2 1.14
1.70 0.045
0.067
L3 2.65
2.95 0.104
0.116
V1 45°
45°
TEL+86-513-83639777
- 4 / 5-
http://www.jjwdz.com

No Preview Available !

JR0805 Series
FIG.1: Maximum power dissipation versus RMS
on-state current
P(w)
12
10
8
6
4
2
0 IT(RMS) (A)
02 4 6
8
FIG.3: Surge peak on-state current versus
number of cycles
ITSM (A)
70
60
tp=10ms
One cycle
50
40
30
20
10
0 Number of cycles
1 10 100 1000
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponging value of I2t (dI/dt < 50A/μs)
ITSM (A), I2t (A2s)
1000
dI/dt
100
10
0.01
ITSM
tp(ms)
0.1
I2t
1
10
JieJie Microelectronics CO. , Ltd
FIG.2: RMS on-state current versus case
temperature
IT(RMS) (A)
12
α=180°
10
8
TO-220A(Ins)
/
TO-220B
TO-251/
(Non-Ins)
6 TO-252
4
2
0 Tc ()
0 25 50 75 100
FIG.4: On-state characteristics (maximum
values)
ITM (A)
70
125
Tj=Tjmax
10
Tj=25
1 VTM (V)
01 23 4
FIG.6: Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25)
3.0
5
2.5
2.0 IGT
1.5 IH&IL
1.0
0.5
0.0
-40
Tj ()
0 40 80 120
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart
from that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the third version which is made in 6-June-2015. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
TEL+86-513-83639777
- 5 / 5-
http://www.jjwdz.com