TF7N65.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 TF7N65 데이타시트 다운로드

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AOT7N65/AOTF7N65
650V, 7A N-Channel MOSFET
General Description
Product Summary
The AOT7N65 & AOTF7N65 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
750V@150
7A
< 1.56
D
G
D
S
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT7N65
AOTF7N65
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
7 7*
4.4 4.4*
24
3.4
173
347
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
192 38.5
1.5 0.3
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT7N65
65
0.5
AOTF7N65
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.65
3.25
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev0:July 2009
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AOT7N65/AOTF7N65
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=650V, VGS=0V
VDS=520V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=3.5A
gFS Forward Transconductance
VDS=40V, ID=3.5A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
650
750
0.74
1
10
±100
345
1.3 1.56
8
0.75 1
7
24
V
V/ oC
µA
nΑ
V
S
V
A
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
710 887 1060
60 77 92
5.5 7
9
1.9 3.8 5.8
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=520V, ID=7A
15 19 23
4 4.9 6
Qgd Gate Drain Charge
6.5 8.3 10
tD(on)
Turn-On DelayTime
22
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=325V, ID=7A, RG=25
47
54
tf Turn-Off Fall Time
37
trr Body Diode Reverse Recovery Time IF=7A,dI/dt=100A/µs,VDS=100V 220 280 340
Qrr Body Diode Reverse Recovery Charge IF=7A,dI/dt=100A/µs,VDS=100V
3 4.2 5
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=3.4A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: July 2009
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AOT7N65/AOTF7N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12 100
10V
10 6.5V
8 10
6 6V
VDS=40V
125°C
-55°C
4
2
0
0
2.6
VGS=5.5V
5 10 15 20 25
VDS (Volts)
Fig 1: On-Region Characteristics
30
1
25°C
0.1
2
3
468
VGS(Volts)
Figure 2: Transfer Characteristics
10
2.2
VGS=10V
1.8
2.5 VGS=10V
ID=3.5A
2
1.5
1.4
1.0
0 2 4 6 8 10 12 14
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1
0.5
0
-100
-50
0
50 100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.1
1
0.9
0.8
-100
-50
0
50 100 150 200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
1.0E+02
1.0E+01
1.0E+00
125°C
1.0E-01
25°C
1.0E2-.022
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev0: July 2009
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AOT7N65/AOTF7N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 10000
12
VDS=520V
ID=7A
1000
9
100
6
10
3
Ciss
Coss
Crss
0
0 5 10 15 20 25 30
Qg (nC)
Figure 7: Gate-Charge Characteristics
1
0.1
1 10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
100 100
10 RDS(ON)
limited
1
0.1
0.01
1
TJ(Max)=150°C
TC=25°C
DC
10 100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT7N65 (Note F)
10µs
100µs
1ms
10ms
1000
10
RDS(ON)
limited
1
10µs
100µs
1ms
0.1
0.01
1
DC
TJ(Max)=150°C
TC=25°C
10ms
0.1s
1s
10 100 1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF7N65 (Note F)
8
7
6
5
4
3
2
1
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev0: July 2009
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AOT7N65/AOTF7N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
1 RθJC=0.65°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT7N65 (Note F)
100
10
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
1 RθJC=3.25°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF7N65 (Note F)
100
Rev0: July 2009
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