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Copyright © 1997, Power Innovations Limited, UK
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
q Designed for Complementary Use with the
BD545 Series
q 85 W at 25°C Case Temperature
q 15 A Continuous Collector Current
q Customer-Specified Selections Available
B
C
SOT-93 PACKAGE
(TOP VIEW)
1
2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
RATING
Collector-emitter voltage (IB = 0) (see Note 1)
Emitter-base voltage
Continuous collector current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD546
BD546A
BD546B
BD546C
BD546
BD546A
BD546B
BD546C
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Ptot
TA
Tj
Tstg
TL
VALUE
-40
-60
-80
-100
-40
-60
-80
-100
-5
-15
85
3.5
-65 to +150
-65 to +150
-65 to +150
260
UNIT
V
V
V
A
W
W
°C
°C
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

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BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICES
Collector-emitter
cut-off current
ICEO
IEBO
Collector cut-off
current
Emitter cut-off
current
Forward current
hFE transfer ratio
VCE(sat)
VBE
hfe
|hfe|
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
IC = -30 mA
(see Note 4)
VCE = -40 V
VCE = -60 V
VCE = -80 V
VCE = -100 V
VCE = -30 V
VCE = -60 V
VEB = -5 V
VCE = -4 V
VCE = -4 V
VCE = -4 V
IB = -625 mA
IB = -2 A
VCE = -4 V
VCE = -10 V
VCE = -10 V
IB = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
IB = 0
IB = 0
IC = 0
IC = -1 A
IC = -5 A
IC = -10 A
IC = -5 A
IC = -10 A
IC = -10 A
IC = -0.5 A
IC = -0.5 A
BD546
BD546A
BD546B
BD546C
BD546
BD546A
BD546B
BD546C
BD546/546A
BD546B/546C
-40
-60
-80
-100
(see Notes 4 and 5)
(see Notes 4 and 5)
(see Notes 4 and 5)
f = 1 kHz
f = 1 MHz
60
25
10
20
3
-0.4
-0.4
-0.4
-0.4
-0.7
-0.7
-1
-0.8
-1
-1.8
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.47 °C/W
35.7 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton Turn-on time
toff Turn-off time
IC = -6 A
VBE(off) = 4 V
IB(on) = -0.6 A
RL = 5
IB(off) = 0.6 A
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.4 µs
0.7 µs
PRODUCT INFORMATION
2

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BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
1000
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS634AJ
VCE = -4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
100
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCS634AB
-10
IC = -1 A
IC = -3 A
IC = -6 A
IC = -10 A
-1·0
10 -0·1
1 -0·01
-0·1 -1·0 -10 -0·01
IC - Collector Current - A
Figure 1.
-0·1 -1·0
IB - Base Current - A
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
-1·6
TCS634AC
VCE = -4 V
TC = 25 °C
-1·4
-1·2
-1·0
-0·8
-0·6
-0·1
-1·0
IC - Collector Current - A
Figure 3.
-10
PRODUCT INFORMATION
-10
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BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-100
SAS634AE
-10
-1·0
-0·1
-0·01
-1·0
BD546
BD546A
BD546B
BD546C
-10 -100
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
-1000
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
100
TIS633AC
80
60
40
20
0
0 25 50 75 100 125 150
TC - Case Temperature - °C
Figure 5.
PRODUCT INFORMATION
4

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BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
ø 4,1
4,0
15,2
14,7
3,95
4,15
4,90
4,70
1,37
1,17
12,2 MAX.
16,2 MAX.
18,0 TYP.
31,0 TYP.
1
1,30
1,10
23
11,1
10,8
2,50 TYP.
0,78
0,50
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
PRODUCT INFORMATION
MDXXAW
5