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CPW2-0650-S010B
Silicon Carbide Schottky Diode Chip
Z-Rec® Rectifier
Features
• 650-Volt Schottky Rectifier
• Zero Reverse Recovery
• Zero Forward Recovery
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on VF
Chip Outline
VRRM
= 650 V
IF(AVG) =  10 A
Qc = 24 nC
Part Number
CPW2-0650-S010B
Die Size
1.92 x 1.92 mm2
Anode
Al
Cathode
Ni/Ag
Maximum Ratings
Symbol Parameter
Value Unit
Test Conditions
VRRM Repetitive Peak Reverse Voltage
650 V
VRSM Surge Peak Reverse Voltage
650 V
VR DC Peak Blocking Voltage
IF Continuous Forward Current
IFRM
IFSM
IF,Max
dV/dt
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Diode dV/dt ruggedness
∫i2dt i2t value
TJ , Tstg Operating Junction and Storage Temperature
650 V
30
14.5
10
46
31
90
71
860
680
200
40.5
25
-55 to
+175
TC=25˚C
A TC=135˚C
TC=153˚C
A
TC=25˚C, tP = 10 ms, Half Sine Wave
TC=110˚C, tP=10 ms, Half Sine Wave
A
TC=25˚C, tp = 10 ms, Half Sine Wave
TC=110˚C, tp = 10 ms, Half Sine Wave
A
TC=25˚C, tP = 10 µs, Pulse
TC=110˚C, tP = 10 µs, Pulse
V/ns VR=0-650V
A2s
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
˚C
TProc Maximum Processing Temperature
1. Assumes RθJC Thermal Resistance of 1.1˚C/W or less
325 ˚C 10 min. maximum
Subject to change without notice.
www.cree.com/power
Note
1
1
1
1
1

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Electrical Characteristics
Symbol
Parameter
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
EC Capacitance Stored Energy
Typ.
1.5
2.0
12
24
Max.
1.8
2.4
60
220
24
460.5
44
40
3.6
Unit
V
μA
nC
pF
μJ
Test Conditions
IF = 10 A TJ=25°C
IF = 10 A TJ=175°C
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
VR = 400 V, IF = 10 A
di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 400 V
Note
Fig. 1
Fig. 2
Fig. 3
Fig. 4
Mechanical Parameters
Parameter
Die Size
Anode Pad Size
Anode Pad Opening
Thickness
Wafer Size
Anode Metalization (Al)
Cathode Metalization (Ni/Ag)
Frontside Passivation
Typ.
1.92 x 1.92
1.65 x 1.65
1.45 x 1.45
377 ± 10%
100
4
1.8
Polyimide
Unit
mm
mm
mm
μm
mm
μm
μm
2 CPW2-0650-S010B Rev. B, 02-2017

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Typical Performance
30
25 TJ = -55 °C
TJ = 25 °C
20 TJ = 75 °C
TJ = 125 °C
15
TJ = 175 °C
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
FowardVVFol(taVg)e, VF (V)
Figure 1. Forward Characteristics
40
Conditions:
35 TJ = 25 °C
30
25
20
15
10
5
0
0 100 200 300 400 500 600 700
ReverseVVRol(taVg)e, VR (V)
Figure 3. Total Capacitance Charge vs. Reverse Voltage
100
90
80
70
60 TJ = 175 °C
50 TJ = 125 °C
40 TJ = 75 °C
30 TJ = 25 °C
20 TJ = -55 °C
10
0
0 100 200 300 400 500 600 700 800 900 1000
ReverseVVRolt(aVge), VR (V)
Figure 2. Reverse Characteristics
500
450
400
350
300
250
200
150
100
50
0
0
Conditions:
TJ = 25 °C
Ftest = 1 MHz
Vtest = 25 mV
1 10 100
ReverseVVRol(taVg)e, VR (V)
1000
Figure 4. Capacitance vs. Reverse Voltage
3 CPW2-0650-S010B Rev. B, 02-2017

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Chip Dimensions
A
BA
B
symbol
A
B
dimension
mm inch
1.92 0.076
1.45 0.057
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, or air traffic control systems.
Related Links
Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Copyright © 2017 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
4 CPW2-0650-S010B Rev. B, 02-2017
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power