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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1142
DESCRIPTION
·Drain Current ID=2A@ TC=25
·Drain Source Voltage-
: VDSS=800V(Min)
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
800
±20
V
V
Drain Current-continuous@ TC=252 A
Total Dissipation@TC=25
35 W
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
0.83
35
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1142
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=0; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1A
IGSS Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=800V; VGS= 0
MIN TYP MAX UNIT
800 V
2.0 4.0 V
5.0 Ω
±100 nA
500 uA
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn