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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD675/D
Plastic Medium-Power
Silicon NPN Darlingtons
. . . for use as output devices in complementary general–purpose amplifier applica-
tions.
High DC Current Gain —
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
Monolithic Construction
BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A,
678, 678A, 680, 680A, 682
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperating Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
BD675 BD677 BD679
BD675A BD677A BD679A
45 60 80
45 60 80
5.0
4.0
0.1
40
0.32
– 55 to + 150
BD681
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
θJC
Max Unit
3.13 _C/W
50
45
40
35
30
25
20
15
10
5.0
0
15
30 45 60 75 90 105 120 135 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating
165
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
BD675
BD675A
BD677
BD677A
BD679
BD679A
BD681*
*Motorola Preferred Device
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS
40 WATTS
CASE 77–08
TO–225AA TYPE
1

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBD675 BD675A BD677 BD677A BD679 BD679A BD681
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Breakdown Voltage(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 50 mAdc, IB = 0)
BD675, 675A
BD677, 677A
BD679, 679A
BD681
BVCEO
45
60
80
100
— Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = Half Rated VCEO, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = Rated BVCEO, IE = 0)
(VCB = Rated BVCEO, IE = 0, TC = 100’C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Currert Gain(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.5 Adc,VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
BD675, 677, 679, 681
BD675A, 677A, 679A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.5 Adc, IB = 30 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 2.0 Adc, IB = 40 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage(1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 2.0 Adc, VCE = 3 0 Vdc)
BD677, 679, 681
BD675A, 677A, 679A
BD677, 679, 681
BD675A, 677A, 679A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv v(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
hfe
750
750
1.0
500 µAdc
mAdc
0.2
2.0
2.0 mAdc
2.5 Vdc
2.8
Vdc
2.5
2.5
——
5.0
2.0
1.0
BONDING WIRE LIMIT
0.5 THERMALLY LIMIT at TC = 25°C
SECONDARY BREAKDOWN LIMIT
0.2
0.1
0.05
1.0
TC = 25°C
BD675, 675A
BD677, 677A
BD679, 679A
BD681
2.0 5.0 10 20
50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area
NPN
BD675, 675A
BD677, 677A
BD679, 679A
BD681
BASE
There are two limitations on the power handling ability of a
transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE lim-
its of the transistor that must be observed for reliable opera-
tion; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
100
COLLECTOR
[ [8.0 k 120
EMITTER
Figure 3. Darlington Circuit Schematic
2 Motorola Bipolar Power Transistor Device Data

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BD675 BD675A BD677 BD677A BD679 BD679A BD681
PACKAGE DIMENSIONS
–B–
U
F
QM
–A–
123
H
K
C
VJ
GR
S 0.25 (0.010) M A M B M
D 2 PL
0.25 (0.010) M A M B M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.425 0.435
B 0.295 0.305
C 0.095 0.105
D 0.020 0.026
F 0.115 0.130
G 0.094 BSC
H 0.050 0.095
J 0.015 0.025
K 0.575 0.655
M 5_ TYP
Q 0.148 0.158
R 0.045 0.055
S 0.025 0.035
U 0.145 0.155
V 0.040 –––
MILLIMETERS
MIN MAX
10.80 11.04
7.50 7.74
2.42 2.66
0.51 0.66
2.93 3.30
2.39 BSC
1.27 2.41
0.39 0.63
14.61 16.63
5_ TYP
3.76 4.01
1.15 1.39
0.64 0.88
3.69 3.93
1.02 –––
STYLE 1:
PIN 1.
2.
3.
EMITTER
COLLECTOR
BASE
CASE 77–08
TO–225AA TYPE
ISSUE V
Motorola Bipolar Power Transistor Device Data
3

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BD675 BD675A BD677 BD677A BD679 BD679A BD681
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4
Motorola Bipolar Power Transistor Device Data
*BD675/BDD67*5/D