BD681.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 BD681 데이타시트 다운로드

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BD675A/677A/679A/681
Medium Power Linear and Switching
Applications
• Medium Power Darlington TR
• Complement to BD676A, BD678A, BD680A and BD682 respectively
NPN Epitaxial Silicon Transistor
1 TO-126
1. Emitter 2.Collector 3.Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BD675A
: BD677A
: BD679A
: BD681
VCEO
Collector-Emitter Voltage
: BD675A
: BD677A
: BD679A
: BD681
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
45
60
80
100
45
60
80
100
5
4
6
100
40
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
mA
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
VCEO(sus)
*Collector-Emitter Sustaining Voltage
: BD675A
: BD677A
: BD679A
: BD681
IC = 50mA, IB = 0
45
60
80
100
V
V
V
V
ICBO
Collector-Base Voltage
: BD675A
: BD677A
: BD679A
: BD681
ICEO
Collector Cut-off Current
: BD675A
: BD677A
: BD679A
: BD681
IEBO
hFE
Emitter Cut-off Current
* DC Current Gain
: BD675A/677A/679A
: BD681
VCE(sat)
* Collector-Emitter Saturation Voltage
: BD675A/677A/679A
: BD681
VBE(on)
* Base-Emitter ON Voltage : BD675A/677A/679A
: BD681
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, VBE = 0
VCE = 45V, VBE = 0
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 100V, VBE = 0
VEB = 5V, IC = 0
VCE = 3V, IC = 2A
VCE = 3V, IC = 1.5A
IC = 2A, IB = 40mA
IC = 1.5A, IB = 30mA
VCE = 3V, IC = 2A
VCE = 3V, IC = 1.5A
750
750
200 µA
200 µA
200 µA
200 µA
500 µA
500 µA
500 µA
500 µA
2 mA
2.8 V
2.5 V
2.5 V
2.5 V
©2000 Fairchild Semiconductor International
Rev. A, February 2000

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Typical Characteristics
10000
VCE = 3V
1000
100
0.1
1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
4.0
3.8 VCE = 3V
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
2.4 Ic = 250 IB
2.0
1.6
1.2
0.8
0.4
0.0
0.1
1 10
IC[A], COLLECTOR CURRENT
Figure 2. Collector-Emitter Saturation Voltage
10
IC(max). Pulsed
IC(max). Continuous
10µs
100µs
1
BD675A
1ms
BD677A
BD679A
10ms
BD681
0.1
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Safe Operating Area
Rev. A, February 2000

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Package Demensions
TO-126
8.00 ±0.30
3.25 ±0.20
ø3.20 ±0.10
0.75 ±0.10
1.60 ±0.10
0.75 ±0.10
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
(1.00)
(0.50)
1.75 ±0.20
0.50
+0.10
–0.05
©2000 Fairchild Semiconductor International
Dimensions in Millimeters
Rev. A, February 2000

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E