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JIEJIE MICROELECTRONICS CO. , Ltd
T0810H/T0820H/T0835H/T0850H Series 8A TRIACs
Rev.3.0
DESCRIPTION:
T08xxH series triacs of high junction temperature with high
dv/dt rate with strong resistance to electromagnetic interference
provide high ability to withstand the shock loading of large
current. They are especially recommended for use on inductive
load and high environment temperature condition.
T08xxH-xxA provides insulation voltage rated at 2500V RMS
and T08xxH-xxF provides insulation voltage rated at 2000V
RMS from all three terminals to external heatsink complying
with UL standards (File ref: E252906).
MAIN FEATURES
123
TO-220A
Insulated
1 23
TO-220F
Insulated
1
2
3
TO-220B
Non-Insulated
2
13
TO-263
Symbol
IT(RMS)
VDRM /VRRM
Tjmax
Value
8
600 and 800
150
Unit
A
V
T2(2)
T1(1)
G(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Storage junction temperature range
Tstg
Operating junction temperature range
Repetitive peak off-state voltage(Tj=25)
Repetitive peak reverse voltage(Tj=25)
Tj
VDRM
VRRM
Non repetitive surge peak Off-state voltage
VDSM
Non repetitive peak reverse voltage
TO-220A(Ins) (TC=96)
TO-220B(Non-Ins)/
RMS on-state current TO-263 (TC=113)
TO-220F(Ins) (TC=110)
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
VRSM
IT(RMS)
ITSM
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Value
-40-150
-40-150
600/800
600/800
VDRM + 100
VRRM + 100
8
Unit
V
V
V
V
A
80 A
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T08xxH Series
I2t value for fusing (tp=10ms)
Critical rate of rise of on-state current (IG=2×IGT)
Peak gate current
Average gate power dissipation
Peak gate power
JieJie Microelectronics CO. , Ltd
I2t 36 A2s
dI/dt
50 As
IGM 2 A
PG(AV)
PGM
1
5
W
W
ELECTRICAL CHARACTERISTICS (Tj=25unless otherwise specified)
Symbol Test Condition
IGT VD=12V RL=33Ω
VGT
VGD
VD=VDRM Tj=150
RL=3.3KΩ
IL IG=1.2IGT
Quadrant
--
--
Value
T0810H T0820H T0835H T0850H
MAX 10 20 35 50
MAX
1.5
Unit
mA
V
--MIN
0.2
V
-
20 40 50 70
MAX
mA
35 55 70 80
IH
dV/dt
(dV/dt)c
IT=100mA
VD=2/3VDRM RGK=1KΩ Tj=150
(dI/dt)c=-2.6A/ms Tj=150
MAX
MIN
MIN
20
200
1
30 45 60 mA
500 1000 1500 Vs
5 15 25 Vs
STATIC CHARACTERISTICS
Symbol
Parameter
VTM ITM=11A tp=380μs
Tj=25
IDRM
IRRM
VD=VDRM VR=VRRM
Tj=25
Tj=150
Value(MAX)
1.55
5
2
Unit
V
μA
mA
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-c) junction to case(AC)
TO-220A(Ins)/
TO-220F(Ins)
TO-220B(Non-Ins)
TO-263
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Value
3.7
1.85
1.7
Unit
/W
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T08xxH Series
ORDERING INFORMATION
T 08 20
Triacs
IT(RMS):8A
10:IGT1-310mA
20:IGT1-320mA
35:IGT1-335mA
50:IGT1-350mA
JieJie Microelectronics CO. , Ltd
H -6 B
E:TO-263
A:TO-220A(Ins)
F:TO-220F(Ins)
B:TO-220B(Non-Ins)
6:VDRM /VRRM600V
8:VDRM /VRRM800V
High junction temperature
PACKAGE MECHANICAL DATA
E
Φ
Max
3.8mm
C2
A
L2
B
G
TO-220A Ins
C3
C
Dimensions
Ref. Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 4.40
4.60 0.173
0.181
B 0.61
0.88 0.024
0.035
C 0.46
0.70 0.018
0.028
C2 1.21
1.32 0.048
0.052
C3 2.40
2.72 0.094
0.107
D 8.60
9.70 0.339
0.382
E 9.80
10.4 0.386
0.409
F 6.55
6.95 0.258
0.274
G 2.54
0.1
H 28.0
29.8 1.102
1.173
L1 3.75
0.148
L2 1.14
1.70 0.045
0.067
L3 2.65
2.95 0.104
0.116
V1 45°
45°
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T08xxH Series
PACKAGE MECHANICAL DATA
E
Max 3.8mm
A
Φ C2
JIE
L2
C3
B
G
TO-220B Non-Ins
C
JieJie Microelectronics CO. , Ltd
Dimensions
Ref. Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 4.40
4.60 0.173
0.181
B 0.61
0.88 0.024
0.035
C 0.46
0.70 0.018
0.028
C2 1.21
1.32 0.048
0.052
C3 2.40
2.72 0.094
0.107
D 8.60
9.70 0.339
0.382
E 9.60
10.4 0.378
0.409
F 6.20
6.60 0.244
0.260
G 2.54
0.1
H 28.0
29.8 1.102
1.173
L1 3.75
0.148
L2 1.14
1.70 0.045
0.067
L3 2.65
2.95 0.104
0.116
V1 45°
45°
E
Φ Max 3.5mm
A
C2
C3
L2
B
G
C
TO-220F Ins
Dimensions
Ref. Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 4.40
4.80 0.173
0.189
B 0.74 0.80 0.83 0.029 0.031 0.033
C 0.48
0.75 0.019
0.030
C2 2.40
2.70 0.094
0.106
C3 2.60
3.00 0.102
0.118
D 8.80
9.30 0.346
0.366
E 9.70
10.3 0.382
0.406
F 6.40
7.00 0.252
0.276
G 2.54
0.1
H 28.0
29.8 1.102
1.173
L1 3.63
0.143
L2 1.14
1.70 0.045
0.067
L3 3.30
V1 45°
0.130
45°
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T08xxH Series
PACKAGE MECHANICAL DATA
JieJie Microelectronics CO. , Ltd
FIG.1 Maximum power dissipation versus RMS
on-state current
P(w)
12
9
6
3
0
02
IT(RMS) (A)
46
8 10
FIG.2: RMS on-state current versus case
temperature
IT(RMS) (A)
12
α=180°
9 TO-263/
TO-220B(Non-Ins)
6 TO-220F(Ins)
TO-220A(Ins)
3
0 Tc ()
0 25 50 75 100 125 150
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