FY6BCH-02.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 FY6BCH-02 데이타시트 다운로드

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PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
FY6BCH-02
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
“
Dimensions in mm
q 2.5V DRIVE
q VDSS .................................................................................. 20V
q rDS (ON) (MAX) ............................................................. 30m
q ID ........................................................................................... 6A
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
Œ
3.0
0.275
0.65
Œ
1.1
Œ “ DRAIN
 Ž ‘ ’ SOURCE
  GATE
“

Ž ‘’
TSSOP8
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 10µH
Typical value
Conditions
Ratings
20
±10
6
42
6
1.5
6.0
1.5
–55 ~ +150
–55 ~ +150
0.035
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Sep.1998

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PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = 20V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 6A, VGS = 4V
ID = 3A, VGS = 2.5V
ID = 6A, VGS = 4V
ID = 6A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 10V, ID = 3A, VGS = 4V, RGEN = RGS = 50
IS = 1.5A, VGS = 0V
Channel to ambient
IS = 1.5A, dis/dt = –50A/µs
Limits
Min. Typ. Max.
20 — —
— — ±0.1
— — 0.1
0.5 0.9 1.3
— 25 30
— 32 40
— 0.15 0.18
— 13.0 —
— 800 —
— 280 —
— 200 —
— 20 —
— 55 —
— 90 —
— 100 —
— — 1.10
— — 83.3
— 50 —
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
1.6
1.2
0.8
0.4
0
0 50 100 150 200
MAXIMUM SAFE OPERATING AREA
5 tw = 10µs
3
2
100µs
101
7
5 1ms
3
2
100 10ms
7
5
3 100ms
2
10–1 TC = 25°C
7 Single Pulse
DC
5
23
5 7 100 2 3
5 7 101 2 3
5 7 102 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
m
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
20
16 VGS = 5V
4V
3V
12 2.5V
2V
8 TC = 25°C
Pulse Test
4 1.5V
PD = 1.5W
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
VGS = 5V
4V
3V
8 2.5V
2V
6
PD = 1.5W
4
1.5V
2
TC = 25°C
Pulse Test
0
0 0.1 0.2 0.3 0.4 0.5
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998

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ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
1.0
TC = 25°C
Pulse Test
0.8
0.6
ID = 12A
0.4
6A
3A
0.2
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
TC = 25°C
VDS = 10V
Pulse Test
16
12
8
4
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
103
7
5
4
3
2
102
7
5
4 TCh = 25°C
3 f = 1MHZ
2 VGS = 0V
10–1 2 3 4 5
7 100
Ciss
Coss
Crss
2 3 4 5 7 101
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
TC = 25°C
Pulse Test
80
60
VGS = 2.5V
40
4V
20
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
102
VDS = 10V
7 Pulse Test
5
4
3 TC = 25°C
75°C
2 125°C
101
7
5
4
3
2
100
5
7 100
2 3 4 5 7 101
2 3 45
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
102
7
5
4 tr
3
td(off)
tf
2
td(on)
101
7
5 TCh = 25°C
4 VDD = 10V
3 VGS = 4V
2 RGEN = RGS = 50
10–1 2 3 4 5 7 100
2 3 4 5 7 101
DRAIN CURRENT ID (A)
Sep.1998

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PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
5.0
TCh = 25°C
ID = 6A
4.0
3.0 VDS = 7V
10V
15V
2.0
1.0
0
0 2 4 6 8 10
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
VGS = 0V
Pulse Test
16
12
TC = 125°C
8 75°C
25°C
4
0
0 0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
VGS = 4V
7 ID = 6A
5 Pulse Test
3
2
100
7
5
3
2
10–1
–50
0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
2.0
VDS = 10V
ID = 1mA
1.6
1.2
0.8
0.4
0
–50
0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50
0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
102
7 D = 1.0
5
3 0.5
2
101 0.2
7
5
0.1
3 0.05
2
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
PDM
100
7
5
0.02
0.01
Single Pulse
3
2
tw
T
D= tw
T
10–1
10–42 3 5 710–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103
PULSE WIDTH tw (s)
Sep.1998