2SC1766.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 2SC1766 데이타시트 다운로드

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Production specification
NPN Epitaxial Transistor
FEATURES
Small flat package.
Low saturation voltage VCE(sat)=-0.5V
High speed switching time
PC=1.0 to 2.0W
High saturation current capability
Pb
Lead-free
2SC1766
APPLICATIONS
Power amplifier
ORDERING INFORMATION
Type No.
Marking
2SC1766
P1766/Q1766/Y1766
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
50
VCEO
Collector-Emitter Voltage
50
VEBO
Emitter-Base Voltage
5
IC Collector Current -Continuous
2
ICM Peak Collector Current
2
IBM Peak Base Current
0.4
PD Total Power Dissipation
1000
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
A
A
A
mW
E049
Rev.A
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Production specification
NPN Epitaxial Transistor
2SC1766
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
Collector cut-off current
Emitter cut-off current
ICBO
IEBO
VCB=50V,IE=0
VEB=5V,IC=0
0.1
0.1
DC current gain
VCE=2V,IC=500mA
82
hFE VCE=2V,IC=2A
20
390
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V,Ic=0.5A
f=100MHz
0.5
1.2
120
Collector output capacitance
Cob VCB=-10V,IE=0,f=1MHz
40
UNIT
μA
μA
V
mV
MHz
pF
CLASSIFICATION OF hFE
Rank
Range
MARKING
P
82-180
P1766
Q
120-270
Q1766
Y
180-390
Y1766
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
E049
Rev.A
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NPN Epitaxial Transistor
PACKAGE OUTLINE
Plastic surface mounted package
A
H
C
K
E
B
L
D
FJ
SOLDERING FOOTPRINT
Production specification
2SC1766
SOT-89
SOT-89
Dim Min Max
A 4.30 4.70
B 2.25 2.65
C 1.50 Typical
D 0.40 Typical
E 1.40 1.60
F 0.48 Typical
H 1.60 1.80
J 0.40 Typical
L 0.90 1.10
K 3.95 4.35
All Dimensions in mm
45° 45°
1.00 1.00
1.50 1.50
Unit:mm
PACKAGE INFORMATION
Device
Package
Shipping
2SC1766 SOT-89
1000/Tape&Reel
E049
Rev.A
www.gmesemi.com
3