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MCP6491/2/4
7.5 MHz, Low-Input Bias Current Op Amps
Features
• Low-Input Bias Current
- 150 pA (typical, TA = +125°C)
• Low Quiescent Current
- 530 µA/amplifier (typical)
• Low-Input Offset Voltage
- ±1.5 mV (maximum)
• Supply Voltage Range: 2.4V to 5.5V
• Rail-to-Rail Input/Output
• Gain Bandwidth Product: 7.5 MHz (typical)
• Slew Rate: 6 V/µs (typical)
• Unity Gain Stable
• No Phase Reversal
• Small Packages
- Singles in SC70-5, SOT-23-5
• Extended Temperature Range
- -40°C to +125°C
Applications
• Photodiode Amplifier
• pH Electrode Amplifier
• Low Leakage Amplifier
• Piezoelectric Transducer Amplifier
• Active Analog Filter
• Battery-Powered Signal Conditioning
Description
The Microchip MCP6491/2/4 family of operational
amplifiers (op amps) has low-input bias current
(150 pA, typical at 125°C) and rail-to-rail input and
output operation. This family is unity gain stable and
has a gain bandwidth product of 7.5 MHz (typical).
These devices operate with a single-supply voltage as
low as 2.4V, while only drawing 530 µA/amplifier
(typical) of quiescent current. These features make the
family of op amps well suited for photodiode amplifier,
pH electrode amplifier, low leakage amplifier, and
battery-powered signal conditioning applications, etc.
The MCP6491/2/4 family is offered in single
(MCP6491), dual (MCP6492), quad (MCP6494)
packages. All devices are designed using an advanced
CMOS process and fully specified in extended
temperature range from -40°C to +125°C.
Related Parts
• MCP6471/2/4: 2 MHz, Low-Input Bias Current Op
Amps
• MCP6481/2/4: 4 MHz, Low-Input Bias Current Op
Amps
Design Aids
• SPICE Macro Models
• FilterLab® Software
• MAPS (Microchip Advanced Part Selector)
• Analog Demonstration and Evaluation Boards
• Application Notes
Package Types
MCP6491
SC70, SOT-23
VOUT 1
VSS 2
VIN+ 3
5 VDD
4 VIN
MCP6492
SOIC, MSOP
VOUTA 1
VINA2
VINA+ 3
VSS 4
8 VDD
7 VOUTB
6 VINB
5 VINB+
* Includes Exposed Thermal Pad (EP); see Table 3-1.
MCP6492
2x3 TDFN*
MCP6494
SOIC, TSSOP
VOUTA 1
8 VDD VOUTA 1
VINA2 EP 7 VOUTB VINA2
VINA+ 3 9 6 VINBVINA+ 3
VSS 4
5 VINB+ VDD 4
VINB+ 5
VINB6
VOUTB 7
14 VOUTD
13 VIND
12 VIND+
11 VSS
10 VINC+
9 VINC
8 VOUTC
2012-2013 Microchip Technology Inc.
DS20002321C-page 1

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MCP6491/2/4
Typical Application
C2
R2
ID1
Light
VDD
D1 MCP649X
+
VOUT
Photodiode Amplifier
DS20002321C-page 2
2012-2013 Microchip Technology Inc.

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MCP6491/2/4
1.0 ELECTRICAL
CHARACTERISTICS
1.1 Absolute Maximum Ratings †
VDD – VSS ................................................................................................................................... ......................................................6.5V
Current at Input Pins ................................................................................................................ ......................................................±2 mA
Analog Inputs (VIN+, VIN-) (Note 1) .................................................................................................................VSS – 1.0V to VDD + 1.0V
All Other Inputs and Outputs ...........................................................................................................................VSS – 0.3V to VDD + 0.3V
Difference Input Voltage...........................................................................................................................................................VDD – VSS
Output Short-Circuit Current ................................................................................................................ ...................................continuous
Current at Output and Supply Pins ............................................................................................................... ..............................±60 mA
Storage Temperature ................................................................................................................ .....................................-65°C to +150°C
Maximum Junction Temperature (TJ) ................................................................................................................ ...........................+150°C
ESD protection on all pins (HBM)  4 kV
Note 1: See Section 4.1.2, Input Voltage Limits.
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
1.2 Specifications
TABLE 1-1: DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, VDD = +2.4V to +5.5V, VSS = GND, TA = +25°C,
VCM = VDD/2, VOUT VDD/2, VL = VDD/2 and RL = 10 kto VL. (Refer to Figure 1-1).
Parameters
Sym
Min Typ Max Units
Conditions
Input Offset
Input Offset Voltage
VOS
-1.5
+1.5
mV VDD = 3.0V, VCM = VDD/4
Input Offset Drift with Temperature VOS/TA
±2.5
— µV/°C TA = -40°C to +125°C
Power Supply Rejection Ratio
PSRR
75
90
— dB VCM = VDD/4
Input Bias Current and Impedance
Input Bias Current
IB
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
IOS
ZCM
ZDIFF
— ±1 — pA
— 8 — pA TA = +85°C
— 150 350 pA TA = +125°C
— ±0.1 — pA
— 1013||6 — ||pF
— 1013||6 — ||pF
Common Mode Input Voltage
Range
VCMR VSS - 0.3 — VDD + 0.3 V
Common Mode Rejection Ratio
CMRR
65
84
— dB VCM = -0.3V to 2.7V,
VDD = 2.4V
70 88 — dB VCM = -0.3V to 5.8V,
VDD = 5.5V
Open-Loop Gain
DC Open-Loop Gain (Large Signal) AOL
95 115 — dB 0.2V < VOUT <(VDD – 0.2V)
VDD = 5.5V, VCM = VSS
2012-2013 Microchip Technology Inc.
DS20002321C-page 3

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MCP6491/2/4
TABLE 1-1: DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, VDD = +2.4V to +5.5V, VSS = GND, TA = +25°C,
VCM = VDD/2, VOUT VDD/2, VL = VDD/2 and RL = 10 kto VL. (Refer to Figure 1-1).
Parameters
Sym
Min Typ Max Units
Conditions
Output
High-Level Output Voltage
Low-Level Output Voltage
Output Short-Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
VOH
2.380 2.396
V VDD = 2.4V
0.5V input overdrive
5.480 5.493
V VDD = 5.5V
0.5V input overdrive
VOL — 0.004 0.020 V VDD = 2.4V
0.5 V input overdrive
— 0.007 0.020 V VDD = 5.5V
0.5 V input overdrive
ISC — ±15 — mA VDD = 2.4V
— ±40 — mA VDD = 5.5V
VDD 2.4 — 5.5 V
IQ 200 530 800 µA IO = 0, VCM = VDD/4
TABLE 1-2: AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to +5.5V, VSS = GND,
VCM = VDD/2, VOUT VDD/2, VL = VDD/2, RL = 10 kto VL and CL = 20 pF. (Refer to Figure 1-1).
Parameters
Sym Min Typ Max Units
Conditions
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
GBWP — 7.5 —
PM — 57 —
SR — 6 —
MHz
°
V/µs
G = +1V/V
Eni — 6 — µVp-p f = 0.1 Hz to 10 Hz
eni — 19 — nV/Hz f = 1 kHz
— 14 — nV/Hz f = 10 kHz
ini — 0.6 — fA/Hz f = 1 kHz
TABLE 1-3: TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, VDD = +2.4V to +5.5V and VSS = GND.
Parameters
Sym Min Typ Max Units
Conditions
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
TA -40 — +125 °C Note 1
TA -65 — +150 °C
Thermal Resistance, 5L-SC-70
JA — 331 — °C/W
Thermal Resistance, 5L-SOT-23
JA — 256 — °C/W
Thermal Resistance, 8L-2x3 TDFN
JA — 52.5 — °C/W
Thermal Resistance, 8L-MSOP
JA — 211 — °C/W
Thermal Resistance, 8L-SOIC
JA — 149.5 — °C/W
Thermal Resistance, 14L-SOIC
JA — 95.3 — °C/W
Thermal Resistance, 14L-TSSOP
JA — 100 — °C/W
Note 1: The internal junction temperature (TJ) must not exceed the absolute maximum specification of +150°C.
DS20002321C-page 4
2012-2013 Microchip Technology Inc.

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1.3 Test Circuits
The circuit used for most DC and AC tests is shown in
Figure 1-1. This circuit can independently set VCM and
VOUT (refer to Equation 1-1). Note that VCM is not the
circuit’s common mode voltage ((VP + VM)/2), and that
VOST includes VOS plus the effects (on the input offset
error, VOST) of temperature, CMRR, PSRR and AOL.
EQUATION 1-1:
GDM = RF RG
VCM = VP + VDD 22
VOST = VIN+ VIN
VOUT = VDD 2+ VP VM+ VOST 1 + GDM
Where:
GDM = Differential Mode Gain
VCM = Op Amp’s Common Mode
Input Voltage
VOST = Op Amp’s Total Input Offset
Voltage
(V/V)
(V)
(mV)
MCP6491/2/4
CF
6.8 pF
RG
100 k
VP
VIN+
RF
100 k
MCP649X
VIN–
VM
RG
100 k
RF
100 k
VDD
VDD/2
CB1
100 nF
CB2
1 µF
RL
10 k
VOUT
CL
20 pF
CF
6.8 pF VL
FIGURE 1-1:
AC and DC Test Circuit for
Most Specifications.
2012-2013 Microchip Technology Inc.
DS20002321C-page 5