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MCP6H81/2/4
5.5 MHz, 12V Op Amps
Features:
• Input Offset Voltage: ±1 mV (typical)
• Quiescent Current: 0.7 mA (typical)
• Common Mode Rejection Ratio: 100 dB (typical)
• Power Supply Rejection Ratio: 102 dB (typical)
• Rail-to-Rail Output
• Supply Voltage Range:
- Single-Supply Operation: 3.5V to 12V
- Dual-Supply Operation: ±1.75V to ±6V
• Gain Bandwidth Product: 5.5 MHz (typical)
• Slew Rate: 5 V/µs (typical)
• Unity Gain Stable
• Extended Temperature Range: -40°C to +125°C
• No Phase Reversal
Applications:
• Automotive Power Electronics
• Industrial Control Equipment
• Battery Powered Systems
• Sensor Conditioning
Design Aids:
• SPICE Macro Models
• FilterLab® Software
• MAPS (Microchip Advanced Part Selector)
• Analog Demonstration and Evaluation Boards
• Application Notes
Typical Application
R1
V1
R2
VDD
VREF
MCP6H81
VOUT
V2
R1
R2
Difference Amplifier
Description:
Microchip’s MCP6H81/2/4 family of operational
amplifiers (op amps) has a wide supply voltage range
of 3.5V to 12V and rail-to-rail output operation. This
family is unity gain stable and has a gain bandwidth
product of 5.5 MHz (typical). These devices operate
with a single-supply voltage as high as 12V, while only
drawing 0.7 mA/amplifier (typical) of quiescent current.
The MCP6H81/2/4 family is offered in single
(MCP6H81), dual (MCP6H82) and quad (MCP6H84)
configurations. All devices are fully specified in
extended temperature range from -40°C to +125°C.
Package Types
MCP6H81
SOIC
NC 1
VIN– 2
VIN+ 3
VSS 4
8 NC
7 VDD
6 VOUT
5 NC
MCP6H82
SOIC
VOUTA 1
VINA– 2
VINA+ 3
VSS 4
8 VDD
7 VOUTB
6 VINB
5 VINB+
MCP6H81
2x3 TDFN
MCP6H82
2x3 TDFN
NC 1
8 NC VOUTA 1
8 VDD
VIN2 EP 7 VDD VINA2 EP 7 VOUTB
VIN+ 3 9 6 VOUT VINA+ 3 9 6 VINB
VSS 4
5 NC
VSS 4
5 VINB+
MCP6H84
SOIC, TSSOP
VOUTA 1
VINA– 2
VINA+ 3
VDD 4
VINB+ 5
VINB6
VOUTB 7
14 VOUTD
13 VIND
12 VIND+
11 VSS
10 VINC+
9 VINC
8 VOUTC
* Includes Exposed Thermal Pad (EP); see Table 3-1.
2012 Microchip Technology Inc.
DS22320A-page 1

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MCP6H81/2/4
NOTES:
DS22320A-page 2
2012 Microchip Technology Inc.

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MCP6H81/2/4
1.0 ELECTRICAL
CHARACTERISTICS
1.1 Absolute Maximum Ratings †
VDD – VSS..........................................................................13V
Current at Input Pins......................................................±2 mA
Analog Inputs (VIN+, VIN-)††.............VSS – 1.0V to VDD + 1.0V
All Other Inputs and Outputs ............VSS – 0.3V to VDD + 0.3V
Difference Input Voltage..........................................VDD – VSS
Output Short-Circuit Current...................................continuous
Current at Output and Supply Pins ..............................±65 mA
Storage Temperature.....................................-65°C to +150°C
Maximum Junction Temperature (TJ)...........................+150°C
ESD protection on all pins (HBM; MM) 2 kV; 200V
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational listings of this
specification is not implied. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
†† See Section 4.1.2, Input Voltage Limits.
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, VDD = +3.5V to +12V, VSS = GND, TA = +25°C,
VCM = VDD/2 - 1.4V, VOUT VDD/2, VL = VDD/2 and RL = 10 kto VL. (Refer to Figure 1-1).
Parameters
Sym
Min Typ Max Units
Conditions
Input Offset
Input Offset Voltage
VOS -4 ±1 4 mV
Input Offset Drift with Temperature VOS/TA — ±2.5 — µV/°C TA = -40°C to +125°C
Power Supply Rejection Ratio
PSRR 82 102 — dB
Input Bias Current and Impedance
Input Bias Current
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
IB
IOS
ZCM
ZDIFF
— 10 — pA
— 400 — pA TA = +85°C
— 9 25 nA TA = +125°C
— ±1 — pA
— 1013||6 — ||pF
— 1013||6 — ||pF
Common Mode Input Voltage Range VCMR VSS – 0.3 — VDD – 2.5 V
Common Mode Rejection Ratio
CMRR
76
95
— dB VCM = -0.3V to 1.0V,
VDD = 3.5V
80 97 — dB VCM = -0.3V to 2.5V,
VDD = 5V
80 100 — dB VCM = -0.3V to 9.5V,
VDD = 12V
Open-Loop Gain
DC Open-Loop Gain (Large Signal)
AOL
100 120
— dB 0.2V < VOUT <(VDD – 0.2V)
2012 Microchip Technology Inc.
DS22320A-page 3

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MCP6H81/2/4
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, VDD = +3.5V to +12V, VSS = GND, TA = +25°C,
VCM = VDD/2 - 1.4V, VOUT VDD/2, VL = VDD/2 and RL = 10 kto VL. (Refer to Figure 1-1).
Parameters
Sym
Min Typ Max Units
Conditions
Output
High-Level Output Voltage
VOH 3.490 3.495 —
V VDD = 3.5V
0.5V input overdrive
4.985 4.993
V VDD = 5V
0.5V input overdrive
Low-Level Output Voltage
11.970 11.980 —
V VDD = 12V
0.5V input overdrive
VOL — 0.005 0.010 V VDD = 3.5V
0.5 V input overdrive
— 0.007 0.015 V VDD = 5V
0.5 V input overdrive
— 0.020 0.030 V VDD = 12V
0.5 V input overdrive
Output Short-Circuit Current
Power Supply
ISC — ±33 — mA VDD = 3.5V
— ±53 — mA VDD = 5V
— ±55 — mA VDD = 12V
Supply Voltage
VDD 3.5 — 12 V Single-Supply operation
±1.75
±6
V Dual-Supply operation
Quiescent Current per Amplifier
IQ — 0.7 1.3 mA IO = 0, VCM = VDD/4
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +3.5V to +12V, VSS = GND,
VCM = VDD/2 - 1.4V, VOUT VDD/2, VL = VDD/2, RL = 10 kto VL and CL = 60 pF. (Refer to Figure 1-1).
Parameters
Sym Min Typ Max Units
Conditions
AC Response
Gain Bandwidth Product
GBWP — 5.5 —
MHz
Phase Margin
PM — 60 —
°C G = +1V/V
Slew Rate
SR — 5 — V/µs
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Eni — 10 — µVp-p f = 0.1 Hz to 10 Hz
Eni — 23 — nV/Hz f = 1 kHz
— 12 — nV/Hz f = 10 kHz
ini — 1.9 — fA/Hz f = 1 kHz
DS22320A-page 4
2012 Microchip Technology Inc.

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MCP6H81/2/4
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, VDD = +3.5V to +12V and VSS = GND.
Parameters
Sym Min Typ Max Units
Conditions
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
TA -40 — +125 °C Note 1
TA -65 — +150 °C
Thermal Resistance, 8L-SOIC
JA — 149.5 — °C/W
Thermal Resistance, 8L-2x3 TDFN
JA — 52.5 — °C/W
Thermal Resistance, 14L-SOIC
JA — 95.3 — °C/W
Thermal Resistance, 14L-TSSOP
JA — 100 — °C/W
Note 1: The internal junction temperature (TJ) must not exceed the absolute maximum specification of +150°C.
1.2 Test Circuits
The circuit used for most DC and AC tests is shown in
Figure 1-1. This circuit can independently set VCM and
VOUT (refer to Equation 1-1). Note that VCM is not the
circuit’s common mode voltage ((VP + VM)/2), and that
VOST includes VOS plus the effects (on the input offset
error, VOST) of temperature, CMRR, PSRR and AOL.
EQUATION 1-1:
GDM = RF RG
VCM = VP + VDD 22
VOST = VINVIN+
VOUT = VDD 2+ VP VM+ VOST 1 + GDM
Where:
GDM = Differential Mode Gain
VCM = Op Amp’s Common Mode
Input Voltage
VOST = Op Amp’s Total Input Offset
Voltage
(V/V)
(V)
(mV)
CF
6.8 pF
RG
100 k
VP
VIN+
RF
100 k
MCP6H8X
VIN–
VM
RG
100 k
RF
100 k
VDD
VDD/2
CB1
100 nF
CB2
1 µF
RL
10 k
VOUT
CL
60 pF
CF
6.8 pF
VL
FIGURE 1-1:
AC and DC Test Circuit for
Most Specifications.
2012 Microchip Technology Inc.
DS22320A-page 5