U217B.pdf 데이터시트 (총 11 페이지) - 파일 다운로드 U217B 데이타시트 다운로드

No Preview Available !

U217B/ U217B-FP
Zero Voltage Switch with Adjustable Ramp
Description
The integrated circuit, U217B, is designed as a zero-
voltage switch in bipolar technology. It is used to control
resistive loads at mains by a triac in zero-crossing mode.
A ramp generator allows to realize power control function
by period group control, whereas full wave logic
guarantees that full mains cycles are used for load
switching.
Features
D Direct supply from the mains
D Current consumption 0.5 mA
D Very few external components
D Full wave drive – no dc current component in the load
circuit
D Negative output current pulse typ. 100 mA –
short circuit protected
D Simple power control
D Ramp generator
D Reference voltage
Applications
D Full wave power control
D Temperature regulation
D Power blinking switch
Package: DIP8, SO8
Block Diagram
95 10872
220 kW R2
(250 V~) (Rsync)
D1 BYT86/800
R1
18 kW/
2W
Load
1000 W
L
C2
2.2 mF/
10 V
R4
100 kW
R5
15 kW
max
100 kW
min
R6
58 kW
2
1 Ramp
generator
8
Synchronization
3
+
4+
Full wave logic
Comparator
Reference voltage
1.25 V
5
Supply
C1
100 mF/
7 16 V
GND
TIC
236N
VM =
230 V~
MT2
6
Pulse
amplifier
100 W
R3 G
MT1
N
Figure 1. Block diagram with typical circuit, period group control 0 to 100%
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96
1 (11)

No Preview Available !

U217B/ U217B-FP
General Description
The integrated circuit, U217B, is a triac controller for the
zero crossing mode. It is meant to control power in
switching resistive loads of mains supply.
Information regarding supply sync. is provided at Pin 8
via resistor RSync.
To avoid dc load on the mains, full wave logic guarantees
that complete mains cycles are used for load switching.
A fire pulse is released when the inverted input of the
comparator is negative (Pin 4) with respect to the non–
inverted input (Pin 3) and internal reference voltage.
A ramp generator with free selectable duration is possible
with capacitor C2 at Pin 2 which provides not only
symmetrical pulse burst control (figure 3), but also
control with superimposed proportional band (figure 10).
Ramp voltage available at capacitor C2 is decoupled
across emitter follower at Pin l. To maintain the lamp
flicker specification, ramp duration is adjusted according
to the controlling load. In practice, interference should be
avoided (temperature control). Therefore in such cases a
two point control is preferred to proportional control. One
can use internal reference voltage for simple applications.
In that case Pin 3 is inactive and connected to Pin 7
(GND), figure 9.
95 11306
Ramp
1 control
Firing Pulse Width tp, (Figure 4)
This depends on the latching current of the triac and its
load current. The firing pulse width is determined by the
zero crossing identification which can be influenced with
the help of sync. resistance, Rsync, (figure 6).
w Ǹtp =
2
arc. sin
IL
VM
P2
whereas
IL =
VM =
P=
Latching current of the triac
Mains supply, effective
Power load (user’s power)
Total current consumption is influenced by the firing
pulse width, which can be calculated as follows:
+ Ǹ w WRsync
VM 2 sin (
3.5
tp
2
)–0.6
10–5A
V
–49
k
10.00
Vmains = 230 V
1.00
0.10
0.01
10
96 11939
IL ( mA)
200
100
50
100 1000
P(W)
10000
–VS 2 C2
Figure 4.
2000
Figure 2. Pin 1 internal network
V1
1.4 V
t
Final voltage
Vmin
7.3 V
–VS(Pin5)
T
Figure 3.
Initial voltage
Vmax
95 11307
1600
1200
VM=230V AC
Tamb=25°C
800
400
0
0
95 9978
300 600 900
tp ( ms )
Figure 5.
1200 1500
2 (11)
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96

No Preview Available !

U217B/ U217B-FP
Triac Firing Current (Pulse)
This depends on the triac requirement. It can be limited
with gate series resistance which is calculated as follows:
 WRGmax
7.5 V – VGmax
IGmax
– 36
IP = IGmax
T
tp
whereas:
VG = Gate voltage
IGmax = Max. gate current
Ip = Average gate current
tp = Firing pulse width
T = Mains period duration
Supply Voltage
The integrated circuit U217B (which also contains
internal voltage limiting) can be connected via the diode
(D1) and the resistor (R1) with the mains supply. An
internal climb circuit limits the voltage between Pin 5 and
7 to a typical value of 9.25 V.
Series resistance R1 can be calculated (figures 7 and 8) as
follows:
R1max = 0.85
Vmin – VSmax
2 Itot
; P(R1) =
(VM – VS)2
2 R1
Itot = IS + IP + Ix
whereas
VM = Mains voltage
VS = Limiting voltage of the IC
Itot = Total current consumption
IS = Current requirement of the IC (without load)
Ix = Current requirement of other peripheral
components
P(R1) = Power dissipation at R1
50
40
30
20
10
0
0
95 10114
XVMains=230V
369
Itot ( mA )
Figure 6.
12 15
6
5
4
3
2
1
0
0
95 10116
XVMains=230V
369
Itot ( mA )
Figure 7.
12 15
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96
3 (11)

No Preview Available !

U217B/ U217B-FP
Absolute Maximum Ratings
Reference point Pin 7
Parameters
Supply current
Sync. current
Output current ramp generator
Input voltages
Power dissipation
Tamb = 45°C
Tamb = 100°C
Junction temperature
Operating-ambient temperature range
Storage temperature range
Pin 5
Pin 8
Pin 1
Pin 1, 3, 4, 6
Pin 2
Pin 8
Symbol
–IS
ISync.
IO
–VI
–VI
±VI
Ptot
Tj
Tamb
Tstg
Value
30
5
3
VS
2 to VS
7.3
400
125
125
0 to 100
–40 to + 125
Unit
mA
mA
mA
V
mW
°C
°C
°C
Thermal Resistance
Junction ambient
Parameters
Symbol
RthJA
Maximum
200
Unit
K/W
Electrical Characteristics
–VS = 8.5 V, Tamb = 25°C, reference point Pin 7, unless otherwise specified
Parameters
Test Conditions / Pin
Supply voltage limitation –IS = 5 mA
Supply current
Pin 5
Pin 5
Voltage limitation
Synchronous current
I8 = ± 1 mA
Pin 8
Pin 8
Zero detector
Output pulse width
Output pulse current
VM= 230 V ,
WRsync = 220 k
WRsync = 470 k
V6 = 0 V
Pin 6
Comparator
Input offset voltage
Pin 3,4
Input bias current
Pin 4
Common mode input
voltage
Pin 3,4
Threshold internal
reference
V3 = 0 V
Pin 4
Ramp generator, Pin 1, figure 1
Period
Final voltage
–IS= 1 mA, Isync =1 mA,
m mC1 = 100 F, C2 = 1 F,
WR4= 100 k
Initial voltage
Charge current
V2 = 0 V, I8 = –1 mA Pin 2
Symbol
–VS
–IS
± VI
±Isync
±Isync
tP
–IO
VI0
IIB
–VIC
–VT
T
V1
–I2
Min
8.6
7.5
0.12
100
1
0.9
6.8
13
Typ Max Unit
9.25 9.9
V
500 mA
8.7 V
mA
35 mA
260 ms
460
mA
5 15 mV
1 mA
(VS–1)
V
1.25 V
1.5 s
1.40 1.80
V
7.3 7.8
17 26 mA
4 (11)
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96

No Preview Available !

Applications
L
RL
Load
VM = 230 V ~
N VDR
U217B/ U217B-FP
270 kW
56 W
8765
U217B
BYT86/800
18 kW
1.5 W
+5 V
CNY21
1 2 3 4 56 kW
47 mF/
10 V
39 kW
II  1.5 mA
VI
95 11308
Figure 8. Power switch
95 11309
m2.2 F/ C2
10 V
220 kW
(250 V~)
R2
(Rsync)
R8
470 kW
BC237
WNTC/M87
B value =
R(25)
3988 100 k
R6
100 kW
R4
100 kW
1)
R5
1
3
R9
150 W
4
Rp
220 kW
R7
130 kW
2
Ramp
generator
8
Synchronization
+
+
Full wave logic
Comparator
Reference voltage
1.25 V
D1 BYT86/800
WR1
18 k /
2W
Load
1000 W
5
Supply
7
C1
6
Pulse
amplifier
100 W
R3
L
VM =
230 V~
N
Figure 9. Temperature control 15 to 35°C with sensor monitoring
NTC–Sensor M 87 Fabr. Siemens
W WR(25) =100 k /B =3988 R(15) = 159 k
R51) determines the proportional range
WR(35) = 64.5 k
TELEFUNKEN Semiconductors
Rev. A1, 24-May-96
5 (11)