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____- - - - - - - - - - - - - - - - - - _ - - - - - - - - - File No. 443
OO(]3f)l]
Solid State
Division
Thyristors
T4103 T4104 T4105
T4113 T4114 T4115
Series
'RM'.'"
(I."E
(
'TIRM'''''L2
400-Hz, 6,10, & 15-A Silicon Triacs
For Control-Systems Application in Airborne and
Ground-Support Type Equipment
Features:
=• di/dt capability 150 A/IlS
• Commutating dv/dt capability
• Shorted-emitter center-gate design
characterized at 400 Hz
~Voltage
Press-fit
Types
Stud
Types
T4103Serios
T4104Serios
T4106Serios
PRESS·FIT
T4113 Series
T4114Serios
T4115 Series
STUD
200 V
Types
400 V
Types
T4103B T4104B T4105B
(40783) (40779) (40775)
T4103D T4104D T4105D
(40784) (40780i (40776)
T4113B T4114B T4115B
(40785) (40781) (40777)
T4113D T4114D T4115D
(40786) (40782) (40778)
. Numbers In parentheses are former RCA type numbers.
.
These RCA triacs are gate·controlled full-wave silicon ac V RMS sine wave and repetitive peak off·state voltages of
switches.
200 V and 400 V.
The devices are designed to switch from an off·state to an
on-state for either polarity of applied voltage with positive or
negative gate triggering voltages.
These triacs exhibit commutating voltage (dv/dt) capability
at high commutating current (di/dt). They can also be used
in 50-Hz applications where high commutating capability i.
They are intended for operation up to 400 Hz with resistive required.
or inductive loads and nominal line voltages of 115 and 208
MAXIMUM RATINGS. Abso/u/('-Maximum Values:
For Operatiun ",ilh Sinusoidal Supply Vo/taKe at Frequencies up 10 .J.()() Hz Qnd with Resisril'C' or
Indu('lil'e Load.
T4103B T4113B T4103D T4113D
T4104B T41148 T4104D T4114D
T4106B T4115B T4106D T4115D
REPETITIVE PEAK OFF.sTATE VOLTAGE:·
Gate open. TJ = -50 to 1000C
VOROM
200
400 V
RMS ON.sTATE CURRENT (Conduction angle = 360°):
Case temperature
TC = 900 C (T4105B, T41050, T4115B, T41150)
= 850C (T4104B, T41040, T4114B, T41140)
= 800C (T4103B, T41030, T41138, T41130)
For other conditions ......... .
PEAK SURGE (NON·REPETITIVE) ON.sTATE CURRENT:
For one ".'ydc of applied principal vollage • TC as above
4()O Hz (sinusoidal) . . . . . . . . . . . . . . . . . . . . • .
60 Hz (sinusoidal) . . . . . . . . . . . . . . . . . . . . . .
. . . . . . .. ...
,0 Hz (Sinusoidal) .....•••••••• ." •••••••.••••••••••••••-•••••••••••.••
For more than onc cycle of applied principal voltage . .
. .. . . . . . . . .
ITIRMS)
ITSM
6
10
15
See Fig. J
200
100
·85
See Fig. 4
A
A
A
A
A
A
RATE'()F-CHANGE OF ON.sTATE CURRENT:
VOM = VOROM. IGT = 160 rnA. tr = 0.1 ~, (See Fig. JJ I . . . . . . . . . . . . . .
FUSING CURRENT (for triac protection):
TJ =-50 to 100oC, t = 1.25 to 10 ms •••••••••••••••••••••••••••••
di/dt
12t
150 A/~s
30 A2s
PEAK GATE-TRIGGER CURRENT:·
For t ,",S max., (See Fig. 7). . . . . . . . . . . .
GATE POWER DISSIPATION:
PEAK (For I /AS max., IGTM ::;4 A. See Fig. 7)
AVERAGE . . . . . . . . .
TEMPERATURE RANGE: A
Storage .......... .
Operating (Case) . . . . . . .
TERMINAL TEMPERATURE (During IDldering):
IGTM
PGM
PG(AV)
T,tg
TC
4
16
0.2
·50 to 150
·50 to 100
A
W
w
°c
°c
For 10 s max. (terminals and case) . . . . . . . . . . . . . . . .
TT 225 °c
• For either polarity of main teiminal 2 voltage (VMT2) with reference to main terminal 1.
• For either polarity of gate voltage (Vc) with reference to main terminal I .
.6 For temperature measurement reference pOint, see Dimensional Outline.
84 9·74

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File No. 443 _ _ _ _ _ _ _ _ _ _ _ _ _ _T4103 T4104 T4105 T4113 T4114 T4115 Series
MAXIMUM RATINGS, Absolute-Maximum Values:
For Operation with Sinusoidal Supply Voltage at Frequencies up to 400 Hz and with
Resistive or Inductive Load. (Cont'd.).
STUD TORQUE: TS
Recommended ••..•••....•••••••••••..•.... : ..••••..••...••.•..•.•
Maximum (DO NOT EXCEED)....................................... .
T4103B T4113B T4103D T41T.lD
T4104B T4114B T4104D T4114D
T410SB TAllSB T4105D T411SD
35 in·lb
50 in·lb
ELECTRICAL CHARACTERISTICS
At Maximum Ratings and at Indicated Case Temperature (Tel Unless Otherwise Specified
CHARACTERISTIC
Peak Off·State Cu rrent:'
Gate open, TJ = 100oC, VDROM = Max. rated value ..
Maximum On-State Voltage:'
For iT =21 A (peak), TC =25 I>C.
DC Holding Current:'
Gate open, Initial principal current =500 rnA (DC), vD = 12 V,
TC = 250 C.
. .. ..
For other case temperatures
Critical Rate-ot-Rise of Cor.nmutation Voltage:6
For vo = VDROM. IT{RMS) = rated value, gate unenergized. (See Fig. 14):
Com mutating di/dt = 21.4 Alms, TC = 900 C
T4105B, T4105D, T4115B, T4115D
Commutating di/dt = 36 Alms, TC = 850 C
T4104B, T4104D, T4114B, T4114D
Commutating di/dt = 53.3 Alms. TC = 800 C
T4103B, T4103D, T4113B, T4113D
Critical Rate-ot-Rise of Off·State Voltage:6
For vO = VOROM. exponential voltage rise,
gate open, TC = 1000 C.
DC Gate-Trigger Current:6t
For vO = 12 V (DCl.
RL = 30 n. and
TC = 25 0 C
Mode
1+
III-
I-
111+
VMT2
positive
negative
positive
negative
-VG- -
positive
negative
negative
positive
SYMBOL
LIMITS
ALL TYPES
Min. Typ. Max.
IDROM - 0.1 2
VTM
- 1.4 1.8
IHO - 20 75
See Fig. 6
dv/dt
5 10
5 10
5 10
-
-
-
dv/dt
IGT
30 150
20
20
35
35
50
50
80
80
UNITS
rnA
V
rnA
V//1S
V//1S
rnA
For other case temperatures.
..
DC Gate-Trigger Voltage:6t
For vD = 12 V(DC), RL = 30n. TC = 250 C.
For other case temperatures. . . . .
For vD = VDROM, R L = 125n, TC = 1000 C
Gate-Controlled Turn-On Time:
(Delay Time + Rise Time)
For vD =VD ROM, IGT " 160mA, tr =0.1 /1S,
iT = 25A (peak), TC = 250 C, (See Figs. 11 & 15)
Thermal Resistance
Steady-State (Junction-to-Case)
Transient (Junction·to-Case). .. ..
Steady-State (Junction-ta-Ambient) ...
See Figs. 8 & 9
- Je FI~. 10 2.5
0.2
V
tgt
I1J-C
I1J -A
-
1.6 2.5
/1S
--
See Fia. 12
--
1
33
°CIW
°C/W
, For either polarity of main terminal 2 voltage (VMT2)
with reference to main terminal 1.
For either polarity of gate voltage (VG) with reference
to main terminal 1.
85

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T4103 T4104 T4105 T4113 T4114 T4115 Series _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 443
+v
Fig. 1 - Principal voltage-current characteristic.
CURRENT WAVEFORM: SINUSOIDAL
LOAD: RESISTIVE OR INDUCTIVE
CONDUCTION ANGLE· 360·
CASE TEMPERATURE: MEASURED AS
SHOWN ON DIMENSIONAL OUTLINES
~~
"uI_
~~
III 100
","'"",
.0.. >"-
...1""90
"'"""~Q,,~,.,eo
~>-
'"
70
P\i 81
0 1800 \)...)3600
CONDUCTION ANGLE
=B r +Bm
60
Fig. 3 - Maximum allowable case temperature VS. on-state current.
FULL-CYCLE RM5 ON-STATE CURRENT [ITIRMSIJ-A
9Zl.S-2139R2
Fig. 2 - Power dissipation vs. on-state current.
SUPPLY FREOUENCY =50/60/400 Hz
LOAD; RESISTIvE
III
IIIII
IIIRMS ON-STATE CURRENT [ITlRMSI}
200 RATED VALUE AT SPECIFI EO TEMP
IIIII
\;~;;l" 1\
E~ 160
GATE CONTROL MAY BE LOST
DURING AND IMMEDIATELY
FOLLOWING SURGE CURRENT
INTERVAL.
~~
z"''z"~,
- "0z"",, 120
WU
OVERLOAD MAY NOT BE REPEATED
UNTIL JUNTION TEMPERATURE
HAS RETURNED TO STEADY-STATE
RATED VALUE
IIIII
li!", ..........
~E 80
~~ ...... r---
r--.... IJoW
0,,<
~,
",z
~o
r--. ~ r--I-
40
j" H'Ll
0 1111
2 4 6B
2 4 •B
2 4 •B
10 100 1000
SURGE CURRENT DURATION-FULL CYCLES
92CS-17056RI
Fig. 4 - Peak surge on·state current vs. surge·current duration.
INSTANTANEOUS ON-STATE VOLTAGE {VTI-V
t POSITIVE OR NEGATIVE I
Fig. 5 - On-state current vs. on-state voltage.
86
-50 -40 -30
I
CASE TEMPERATURE (TC 1 - DC
92CS-I7057
Fig. 6 - DC holdmg current vs. case temperature.

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FileNo. 443 _ _ _ _ _ _ _ _ _ _ _ _ _T4103 T4104 T4105 T4113 T4114 T4115Series
DC GATE TRIGGER CURRENT 11'GTI-4
t POSITIVE OR NEGATIVE
Fig. 7 - Gate trigger characteristics and limiting conditions for
determination of permissible gate trigger puls,!s.
. PRINCIPAL DC VDLTAG£oI2 V
LOAD -30.0 RESISTIVE
150 TRIGGERING MODES: 1+ AND III-
E
rI.
a!:! '25
~ 'DO
.rt4-t/~
1I.rt
"'C">' 70
C>
"0-'
'~"
50
C>
uc 25
TYPIC.ll~
0
-75
-50 -25
0
CASE TEMPERATURE tTCI_oC
2S
9ZCS-17059
Fig. 8 - DC gate-trigger current VS. case temperature.
1/+ & 111- modes}.
1
I
~
~
~200
.."~' 150
.~
5
'
g 50
-so -25
0
CAsE TEMPERATURE neJ _oC
2.
92CS-17060
Fig. 9 - DC gate-trigger current lfS. case temperature.
(1- & II!+ mod••).
PRINCIPAL DC VOLTAGE-12 v
LOAD o50tI. RESISTIVE
TRIGGERING MODES: ALL
:i 4
<l>
YPICAL
-50 -25
0
CASE TEMPERATURE ITCJ--C
F;g. 10 - DC gate-trigger voltage vs. case temperature.
DC GATE-TRIGGER CURRENT IIGTI-mA 92CS-17062
Fig. 11 - Turn-on time vs. gate trigger current.
~ 'DO
1!
",!!!
a~ eo
"'~:;;f''>'~"'-' 60
~!'z"~
~~
"~'~z
~ 20
V
/
......
46B
468
468
Kr3 10-2 10-1
I
TIME AFTER APPLICATION OF RECTANGUlAR POWER PULSE -SECONDS
92L5-2<107111
F;g. 12 - Trans;ent thermal resistance vs. time (junction-to-case).
87

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T4103 T4104 T4105 T4113 T4114 T4115 Series _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 443
VD
oJ--- ------ --- -----
0-- -
92CS-17063
400 HL
PRINCIPAL
CURRENT
'--
COMMUTATING
d~/dl
PRINCIPAL
VOLTAGE
I
I
I
COMMUTATING
dl/dt
Fig. 13 - Rate of change of on-state current with time (defining
dildtl.
Fig. 14 - Relationship 'between supply voltage and principal current
(inductive load) showing reference points for definition of
commutating voltage (dvldt).
1
I
1
____ I1 _L __ _
1I
II
- - LI
I
T:
II
11
i :... 90~. POINT
o_'TLMJI ___
1I
1_+- __ _
~'d++_"
1--",--1
I
r \ - POI~VGLT 1-..-10%
---~~---~-0-
92CS-13366R2
Fig. 15 - Relationship between off-state voltage, on-state current,
and gate-trigger voltage showing reference points for defini-
tion of turn-on time (fgt).
50011
r - - - - ' rR-Ft-F-IL-TE'R
I: :I I LF I
I O.I.F :: CF :
I 200V I 1
1
)-_____ J L ____ J
SNUBBER NETWORK fOR
INDUCTIVE LOADS OR WHEN
COMMUTATING VOLTAGE (dv/dt)
CHARACTERISTIC IS EXCEEDED.
92CS-17066
Fig. 16 - Typical phase-control circuit for operation at 400 Hz.
TERMINAL CONNECTIONS
No.1-Gate
No.2-Main Terminal 1
Case, No.3-Main Terminal 2
88