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2N6094 thru 2N6097 (SILICON)
The RF Lin.e
PNP SILICON RF POWER TRANSISTORS
... designed for 12.5 Volt VHF large-signal amplifier applications
required in military and industrial equipment operating to 250 MHz.
• Balanced Emitter Construction with Isothermal Resistor Design to
Provide the Designer with the Optimum in Transistor Ruggedness
• Low Lead Inductance Stripline Packaging for Easier Design and
IncreaSed Broadband Capabilities
• Flange Package for Easy Mounting and BetterThermal Conductivity
to Heat Sink
• Exceptional Power Output Stability versus Temperature
4_0. 15. 30.40WATTS-175 MHz
PNPSILICON
RF POWER
TRANSISTORS
"MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -
Continuous
Total Device Dissipation
@Te=250 e
Derate above 25°C
Storage Temperature
Range
.Svmbol 2N6094
VeEO
VeBO
VEBO
Ie
1.0
2N6095 2N6096
18
36
4.0
2.5 4.0
...2N6097
6.0
Unit
Vdc
Vdc
Vdc
Adc
PO!l)
T stg
8.0
45.7
20 40
114 228
-65'0 +200
60 Watts
343 mWPe
DC
·'ndicates JEDEC Registered Data.
(1) These devices are designed for RF operation. The total device dissipation rating
applies only when the devices are operated as RF amplifiers.
Q
3 L°19H+~<X:
t
a STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
~B
dE.E:::: I I
4. COLLECTOR
t
~rr=i 0 i'l N
~A----r' I
SEATING PLANE
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 24.64 24.B9
B 9.47 9.73
C 6.07 7.14
D 5.59 5.84
E 2.16 2.67
F 0.10 0.15
G 18.29 18.54
H 21.59 22.10
J 3.12 3.23
K 10.80 11.05
L 6.22 6.48
M 400 500
N 3.81 4.57
Q 2.97 3.12
0.970
0.373
0.239
0.220
0.085
0.004
0.720
0.850
0.123
0.425
0.245
400
0.150
0.117
0.980
0.383
0.281
0.230
0.105
0.006
0.7 0
0.870
0.127
0.435
0.255
500
0.180
0.123
CASE 211-01
2-450

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2N6094 thru 2N6097 (continued)
*ELECTRICAL CHARACTERISTICS (Tc = 250 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mAde, IB = 0)
(lc = 20 mAde,lB = 0)
(lC = 50 mAde, IB = 0)
(lc = 100 mAde,lB = 0)
Collector Emitter Breakdown Voltage
(Ie = 5.0 mAde, VBE = 0)
(Ie = 10 mAde, VBE = 0)
(Ie = 15 mAde, VBE = 0)
(lc = 20 mAde, VBE = 0)
Emitter-Base Breakdown Voltage
(IE = 1.0 mAde, Ie = 0)
(IE = 2.0 mAde, IC = 0)
(IE = 5.0 mAde, Ie = 0)
(IE = 10 mAde, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE =0, TC = 550 e)
Collector Cutoff Current
(VCB = 15 Vde, IE = 0)
2N6094
2N6095
2N6096
2N6097
2N6094
2N6095
2N6096
2N6097
2N6094
2N6095
2N6096
2N6097
2N6094
2N6095
2N6096
2N6097
2N6094
2N6095
2N6096
2N6097
Symbol
BVCEO
BVeES
BVEBO
ICES
ICBO
ON CHARACTERISTICS
DC Current Gain
(lC=0.25Ade, VCE =5.0Vde)
(Ie = 0.5 Ade, VCE = 5.0 Vde)
2N6094
2N6095,2N6096,2N6097
DYNAMIC CHARACTERISTICS
Output Capacitance
(VeB = 12.5 Vde,IE = 0, f = 100kHz)
2N6094
2N6095
2N6096
2N6097
Cob
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain (Figure 1)
(Pout = 4.0W, Vec = 12.5 Vde,lc(max) = 0.62 Adc,
f = 175 MHz)
(Pout = 15 W, VCC = 12.5 Vde,lc(max) = 1.9 Ade,
f = 175 MHz)
IPout = 30 W, Vec = 12.5 Vde,lelmax) = 3.4 Ade,
f = 175 MHz)
(Pout = 40W, Vec = 12.5 Vde,lclmax) = 4.3 Ade,
f = 175 MHz)
2N6094
2N6095
2N6096
2N6097
GpE
Collector Efficiency IFigure 1)
IPout = 4.0 W, Vee = 12.5 Vde, f = 175 MHz)
IPout = 15 W, Vec = 12.5 Vde, f = 175 MHz)
IPout =30W, Vee= 12.5 Vde, f= 175 MHz)
!Pout =40W, Vec = 12.5 Vde, f = 175 MHz)
2N6094
2N6095
2N6096
2N6097
~
*'ndicates JEDEC Registered Data
Min
18
18
18
18
36
36
36
36
4.0
4.0
4.0
4.0
-
-
-
-
-
-
-
-
-
-
-
12
6.3
5.7
4.5
50
55
60
60
Typ Max Unit
Vde
--
--
--
--
Vde
--
--
--
--
Vde
--
--
--
--
mAde
- 5.0
- 8.0
_-.
10
10
- 250 /LAde
- 500
- 1.0 mAde
2.5
pF
17 20
90 120
150 190
300 400
dB
--
--
--
--
%
--
--
--
--
2-451

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2N6094 thru 2N6097 (continued)
FIGURE 1 - 175 MHz TEST CIRCUIT
r----------------t-----,c:--o -12.5 Vdc
C7~
2N6094
C1,C2 AReo 462 or Equivalent
C3,C4 70 pF Unelco J1HF
C5 AReO 463 or Equivalent
C6 AReO 461 or EqUivalent
C7 1000pF
C8 50j.l.F,50V
11 25 nH. 1 Turn, #18 AWG, 1-1/4" Long, 1/4" 1.0.
Ll VK200 20/4B Ferrite Choke. Ferrnxtube
L3 150 nH, BTurns, '18AWG. 3/4" Long, 3/16" 1.0
l4 36 nH. 1-112 Turns. #18 AWG, 1-114" long. 1/4'" D.
A1 390 Ohms, 112W
2N6095
C1,C6 AReO 462 or EqUivalent
C2 AReO 464 or Equivalent
C3,C4 40 pF Unelco Jl HF
C5 ARCO 463 or EqUivalent
C7 lOOOpf
C8 5.0pf, 50 V
11 Copper Strap 1/4"Wlde,l-1/4" long, Straight
L2 VK200 20/48 Fernte Choke. Ferroxtube
L3 150 nH,4 TUrns. #18AWG, 3/4" Long, Wound on R1
l4 1 Turn, #18 AWG, 1·1{4" Long. 1/4" 1.0
R1 390 Ohms. 1 W
2N6096
C1,C2
C3,C4
C5,C6
C7
C8
L1
l2
l3
L4
Rl
ARGO 462 or Equivalent
100 pF Unelco J1HF
ARCO 463 or Equivalent
1000 pF
5.01lF,50 V
1/2 Turn, #16 AWG, 1-1/4" long, 1/4"1.0.
VK200 20/4B Ferrite Choke, Ferroxcube
4 Turns, #18 AWG, 3/4" Long, Wound on Rl
1 Turn, #16 AWG, 1-1/4" long, 1/4"1.0
390 Ohms, 2 W
2N6097
Cl,C2,C5
C6
C3,C4
C7
C8
11
L2
l3
l4
Rl
ARCO 462 or Equivalent
ARCO 464 or Equivalent
100 pF Unelco Jl HF
1000 pF
50llF,50V
18 nH, 1-1/4" Straight, #16 AWG
VK200 20/4B Ferrite Choke, Ferroxcube
5 Turns, #18 AWG,3/4" long, Wound on Rl
1 Turn, #16 AWG, '-1/4"long,1f4" 1.0_
160 Ohms, 2 W
OUTPUT POWER versus FREOUENCY
(Vee =-12.5 Vdc)
FIGURE 2 - 2N6094
10
7.0
'" -~~
f-
10 50
'~"
-r--~
,;f;-: 3.0
"'"f=->
0 2.0
""l'"0':
..........
I'......
I'......
t'--."
~=O.5W
--......... ~W
~ 0.25W
t-.... .......... ..,.....,
o 05W ~ "'b-.. 1"-
~ i'-.. ~
"'-"~
1.0 I'....
'"100 140 180 220 260 300
t, FREQUENCY (MHd
FIGURE 3 - 2N6095
E:::::~ ~20
.............
.........
I'-..
; :F::::..........i'--It-.'.-.. -.
~45W.1 j~d:-
~'<~<:S'AW4.nw 3 W
~
2.5W
10
........ ........
"A
,7.0
........L ........ ......... '< ........1 .......
I r-..,I ........ I'-...
I
, /"-1.0W /
.......... ...... "-
..........
/0 1.5W ......
'"1"'-" """"-":""1.IOW ~
3.0 "\
"" "-'"1.0 I'\.
"100 140 180 210 160 300
t, FREQUENCY (MHz)
40
30
~
f«- 0
10
'~"
~
;f;-:
f-
0
=>
0 8.0
~
0':
6.0
4.0
100
FIGURE 4 - 2N6096
,--.... ..... :::::::-- ...........'::n J8.OW
I
" , /......::::-.......... ~ 6.0W
'" "- "-.. ~~............ 5.0W
"'- "'"~.~~~
'" ""- 3.0W
~
......
"- "-
'\.
"~
140 180 220 260 300
t, FREQUENCY (MHz)
=- ---50 ..::::::
0
FIGURE 5 - 2N6097
-.... r-)~
'" "'-"~610.r-.-0--
0
...... rt--.-.........-.
.............
'" -
I'...... '"
~lOW........ .....1'......
...... "'8.~W ~
.....
0
" "7.0 "-
50
100 140 180 110 260 300
f, FREQUENCY (MHz)
2-452

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2N6094 thru 2N6097 (continued)
TYPICAL PERFORMANCE DATA
OUTPUT POWER versus INPUT POWER
(Vee = -12.5 Vdc, I = 175 MHz)
5.0
f!! 4.0
>-
i"E"
r--'
'~" 3.0
~
!;
~ 2.0
--FIGURE 6 - 2N6094
/'V
./
V
i/
/
V
.Le-.0
~
1.0
c--- ..- . _- r--- f--
o
o 005 0.10 0.15 0.20
0.15
FIGURE 7 - 2N6095
30
u;
>>--
25
i"E"
~'" 20
!;
!; 15
0
~ 10 f--
5.0
o
/
/
/.._ .
V
1.0 2.0
/
/'
V
3.0 4.0
/
5.0
-~
.-
6.0 7.0 8.0
Pin, INPUT POWER (WATTS)
Pin,INPUTPOWER (WATTS)
FIGURE 8 - 2N6096
0
0
- ---
0
/
0
/
/
/'V
V/ .
0
2.0 4.0 6.0
Pin, INPUTPOWER (WATTS)
----
8.0 10
50
~>>-- 40
i"E"
'~" 30
~
!;
0
20
d:
10
o
FIGURE 9 - 2N6097
V
/
/
./
/
V
5.0 10
Pin, INPUT POWER (WATTS)
~
15
7.0
en 6.0 r----
~
~
ffi 5.0
3:
~
>-
~ 4.0
=o>
rE" 3.0
1.0 L
6.0
CIRCUIT DESIGN DATA
OUTPUT POWER versus SUPPLY VOLTAGE
FIGURE 10 - 2N6094
(I = 175 MHz)
/'
../V
../V
V
../
../ VPin =0.25W
../V
./"
0
8
6
4
./
./V
8.0 10 11 14 16
1
/
V
V10
6.0 8.0
FIGURE 11 - 2N6095
/
/'
V
/
'/Pin=3.5W
./
10 11
/
14
Vee, SUPPL Y VOLTAGE (VOLTS)
vee,SUPPLY VOLTAGE (VOLTS)
16
2-453

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2N6094 thru 2N6097 (continued)
CIRCUIT DESIGN DATA
OUTPUT POWER versus SUPPLY VOLTAGE
FIGURE 12 - 2N6096
(f = 175 MHz)
FIGURE 13 - 2N6091
42 65
~ 36
I«-
~
a:
~
30
~
l=->
1= 24
=>
0
V.} 18
V
~
V
..,- VPin=8.0W
,/
/"
/'"
i- 55
ffi 45
~
!:=; 35
o=>
!l
<E
./
5k-"'"
~
/'"
LI"'"
V
Pin=14W
V
12
6.0 8.0 10 12 14 16
VCC,SUPPLY VOLTAGE (VOLTS)
15
6.0 8.0 10 12 14 16
VCC,SUPPLY VOLTAGE (VOLTS)
PARALLEL EQUIVALENT INPUT RESISTANCE versus FREQUENCY
(Vee =-12.5 Vdc)
FIGURE 14 - 2N6094
8.0
FIGURE 15 - 2N6095
4.0
0
0
r-.. t-..
-...r-..
Pout:: 4.0 W
. . .r-..
0
r--...
...........
t-
o
100 125 150 175 200 225
f, FREQUENCY (MHz)
0
0
f..-
0
/V
r-- ~V
V Pout = 15W
LV
0
100 125 150 175 200 225
f, FREQUENCY (MHz)
8.0
0
.0
.0
0
100
FIGURE 16 - 2N6096
V/
- ' - - r-pout =30W
/
125 150 175 200 225
f, FREQUENCY (MHz)
9.0
8.0
0
0
0 __
2.
FIGURE 11 - 2N6097
lL
lL':
V
~
V Pout=40W
, /V
V
1.0
100 125 150 175 200 225
f, FREQUENCY (MHz)
2-454