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_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 432
CRlm500
Solid State
Division
Power Transistors
2N3053
40389 40392
'~~......;~;.~.~.R.C..
II'
40392
H-1375
H-1468
tiTeIl
2N3053S
II \
2N3053L
II \
H-1380
General-Purpose, Medium-Power
Silicon N-P-N Planar Transistors
For Small-Signal Applications
In Industrial and Commercial Equipment
Features:
III Maximum safe~area-of-operation
curve
• Forward- and reverse-bias operation
without second breakdown
• low leakage current
These devices are available with either 1~·
inch leads (TO-5 package) or %-inch leads
ITO-39 package). The longer-lead versions are
specified by suffix "L" after the type num-
ber; the shorter-lead versions are specified by
suffix "S" after the type number.
RCA·2N3053 is a silicon n-p-n planar transistor useful up
to 20 MHz in small-signal, medium-power applications. Type
40389 is a 2N3053 with a factory-attached diamond-shaped
mounting flange.
Applications:
• Audio amplifiers
• Controlled amplifiers
• Power supplies
• Power oscillators
MAXIMUM RATINGS, Absolute-Maximum Values:
COLLECTOR-TO-BASE VOLTAGE
COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE:
With external base-ta-emitter resistance
(RBE) = 10n . . . . .
With base open. . . . . . . .
With base-emitter-junction reverse-biased
EMITTER-TO-BASE VOLTAGE
COLLECTOR CURRENT. . .
TRANSISTOR DISSIPATION:
At case temperatures up to 25°C
. VCBO
VCER(SUS)
VCEQ(sus)
VCEV(sus)
VEBO
IC
PT
At free-air temperatures up to 250C.
At temperatures above 250C .
TEMPERATURE RANGE:
Storage and operating (Junction)
LEAD TEMPERATURE (During soldering):
At distance;;;' 1/32 in. (0.8 mm) from
seating plane for lOs max. . . . . .
2N3053
60
40389
40392
60
50 50
40 40
60 60
55
0.7 0.7
57
(40392)
3.5
(40389)
See Figs.1, 2, and 3
.. -65 to +200 ..
-235---
V
v
V
V
V
A
W
W
80 9-73

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File No. 432 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N3053, 40389, 40392
ciELECTRICAL CHARACTERISTICS, At Case Temperature (T =2t;OC
Characteristics
Collector-Cutoff Current
Emittt"r-Cutoff Current
DC Forward-Current
Transfer Ratio
Collector-to-Base
Breakdown Voltage
Emittcr-to... Base
Breakdown Voltage'
Symbol
ICBO
lEBO
hn:
BV C I l O
TEST CONDITIONS
DC
Collector
Voltage
V
DC
Emitter
or Base
Voltage
V
Vce VCE VEa VaE
DC
Current
mA
IC IE la
30 0
40
LIMITS
Types
2N3053
40389
40392
Units
Min. Max.
- 0.2S fJ-A
- 0.25 fJ-A
10 ISOa SO 250
0.1 0
60 -
\"
IlV EBO
0 0.1
-.';
\'
Collector-to-Emi tter
Sustaining Voltage:
With base open
With external base-Io-emitter
rpsislance
(RRE) = 10 \l
Base-la-Emitter
Saluration Voltage'
ColleCt or-to-f:mitter
Saturation Vo1tagc
VCEO(Sus)
VCER(sUS)
V B~~(Hat)
VCE(sat)
100"
100·
1·.50
150
0 40 -
\'
so - \
IS -
1.7 \'
15 -
1.4 \'
Small-Signal, Forward Curren t
TransfN Ratio (At 20 MHz)
hfe
Output Capacitance
Input Capacitance
Thermal Resistance!
Junction-to-Case
Cob
Cib
8J-C
10
10
O.S
Junction-to-Free Air
8J - FA
apulsed; pulse duration = 300J.l.S' duty factor = 1.8 %.
SO
0
0
S-
- IS pF
80 pF
35(max.) °elw
2N3053
25(max.) °CIW
40392
175(max.) °CIW
2N3053
50(max.) °CIW
40389
81

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2N3053, 40389, 40392 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 432
'"I
-u
.t!
;~
a:
::I
0.1
U
a:
t
L&I
..J
..J
8
10
COLLECTOR-TO-EMITTER VOLTAGE (VeE) - V
Fig. 1 - Maximum operating areas for type 2N3053.
9255-3362
Fig.2 - Derating curve for type 2N3053.
82
'~
25 !SO 7S1OO1ZS1S0175200
CASE TEMPERATURE (Tcl--C
12LS-1469

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File No. 432 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N3053, 40389, 40392
2
I
f
40389
(<477F<4)
-100 -so 0 2S 50 100 ISO 200
CASE OR FREE-AIR TEMPERATURE ITe OR TFA)--C
92SS-3002
Fig. 3 - Dissipation derating curves for all types.
FREE-AIR TEMPERATURE (TFJ,).25"C
.~~. T II
z
S~z! 4.~, -r-rttr-t-~1f\\+~~H_-r_+++~+_~HH
i!~
~!~~~-rH--r-+++~f\+\~+-+-~~~~~~
t: I
:0 ..
~~44-4-~++t-t-+11+-+~~H-4--+++~~~~
I
~ 42t-~~~-HH+4-++Hr~~~~~
~ ~~-+~~4+~+-H4~\~I~-+~-~Lc~m~
6,8dK10 4 6 '00 2 4 6 elK 2 46 810K 2 4
EXTERNAL BASE-TO-EMITTER REgSTANCE (RBEl-A 92C5-12332R2
Fig. 4 - Sustaining voltage vs. base-to-emitter resistance for
all types.
200 400
INDUCTANCE IL)-I£H
600
9255-3365
Fig. 5 - Reverse-bias, second-breakdown characteristics for
all types.
I
BASE-tO-EMITTER YOLTAGEIVsEI- V
92CS-12329RI
Fig. 6 - Typical dc-beta characteristics for all types.
COLLECTOR-TO-EMITTER VOLTAGE'Va:)-IOY
_ 200
~
~.1-
5 175
~ 150
'~" 12~
l!i
I-l---I!: 10(
~ C"f,-e;.
}IJ;..~..::p
!I-~7
V~
v§!5 75I-#~
I ..b •
......V
g
f\
"'1\
\\
'\
..
0.1
10 4 . 8 102 2
10'
COLLECTOR CURRENT IIc)-mA 92CS-1233IRI
Fig. 7 - Typical input characteristics for all types.
tzeS-12327AI
COLLECTOR-TO-EMITTER WLTAGE (VCEJ-V
Fig. 8 - Typical output characteristics for all types.
83

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2N3053, 40389, 40392 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ FileNo. 432
BASE-TO-EMITTER YOL1I.GE (VBE' - v Mel-IOIMI
Fig. Typical transfer characteristics for all types.
1000 REE-AIR TEMPERAllJRE ITFA)- 2&-
4r-+-~~:...~.J:-!_:_ ~ISIO15
C
+. Iv:;.....?100
!j
I..i.
0:
41\a0:
0:
~ 10
~
~
"'~I-.
~ 4\
-~
Zoe
17e
I
I
GAIN- BANDWIQTH PRODUCT (iTI=IOOMH.
I
10 ~ ~ ~ ~ ~ M
COLLECTOR-TO-EMITTER VOLTAGE (VcE)-V '2CS"'ZQ5R1
Fig. 10· Typical variation ofgain·bandwidth product with IC
and VCE for all types.
TERMINAL CONNECTIONS
Lead 1 - Emitter
Lead 2 - Base
Lead 3 - Collector
84