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_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 138
ffilOBLJO
Solid State
Division
Power Transistors
2N3583-2N3585
2N4240, 40374
JEDEC TO·66
"A-Vt-~- .
JEDEC TO·66
With Integral Heat Radiator
High-Voltage Silicon
N-P-N Transistors
For High·Speed Switching and
Linear·Amplifier Applications
Features
• lOo-percent tested to assure freedom from second breakdown in both forward·
and reverse·bias conditions when operated within specified limits
• JEDEC TO·66 package for 2N3583, 2N3584, 2N3585, and 2N4240
• JEDEC T0-66 package with heat radiator for 40374
• Economy types for ae/dc circuits
• Fast turn·on time at high collector current
RCA·2N3583,- 2N3584,- 2N3585,- 2N4240,- and 40374
are silicon n·p--n transistors with high breakdown voltages and
fast switching speeds.
Type 40374 is a 2N3583 with a factory·attached heat
radiator to increase the free-air dissipation rating. This device
is intended for those applications which require a power
transistor for mounting on a printed·circuit board. Tabs are
provided on the underside of the radiator for mounting
purposes and making electrical connection to the collector.
Typical applications for these transistors include high·voltage
.operational amplifiers, high·voltage switches, switching reg·
ulators, converters, inverters, deflection· and hi·fi amplifiers.
These transistors are also intended for a wide. variety of
applications in ac/dc commercial equipment,
Heat·radiator versions of types 2N3584, 2N3585, and
2N4240 can also be supplied on special order.
-Formerly Dev. Nos. TA2510, TA2511, TA2512, and TA2B71,
respectively.
MAXIMUM RATINGS, Absolute-max;mum values:
'COLLECTOR·TO·BASE VOLTAGE •• , .. , •.•• , . , " , . , VCBO
'COLLECTOR·TO·EMITTER VOLTAGE, sustaining • . • . . . • . . VCEO(sus)
'EMITTER·TO.f3ASE VOLTAGE ., •• "." .• , .•...•.. VEBO
'CONTINUOUS COLLECTOR CURRENT, .....•.• , •.• " IC
'PEAK COLLECTOR CURRENT ••.....•. , " ' , ••..••
'CONTINUOUS BASE CURRENT • • . . . . • • • . • • • • • • • . • • IB
'TRANSISTOR DISSIPATION • . • • • . . . • . • . . . . • . . . . • • PT
At case temperature (Tel'" 250C . . . . . . . . . . . . . . . . .
At case temperatures above 250 C . . . . . . . . . . . . . . . . . .
For other conditions . . . . • . . . . . . . . . . . . . . . . . . . . .
'TEMPERATURE RANGE:
Storage & Operating (Junction) . . . . . . . . . . . . . . . . . . . .
'PIN TEMPERATURE:
1/16 in. (l.SS mm) from seating plane for 10 s max. . . . . . .
2N35B3
250
175
5
2N3584
375
250
6
2
5
2N3585
2N4240
500
300
6
2
5
40374
250
175
6
2
5
35 35 35
Derate linearly at 02 W/oC
See Figs. 7, B, 9, 21,22, & 23
35
_ - 6 5 to 200
235 235 235 235
V
V
V
A
A
A
W
oC
"C
'In accordance with JEDEC registration data format JS.s RDF·2 (2N35B3). JS.s RDF·1 (2N35B4. 2N35B5, 2N4240)
128
2·72

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File No. 138 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N3583-2N3585, 2N4240, 40374
ELECTRICAL CHARACTERISTICS at Case Temperature (TC) =2rf1C Unless Otherwise Specified
TEST CONDITIONS
LIMITS
CHARACTERISTIC SYMBOL
VOLTAGE
V de
CURRENT
mAde
2N3583
40374
2N3584
2N3585
2N4240
UNITS
Collector-Cutoff Current IceD
Collector-Cutoff Current ICEX
At TC = 1500 C
Emitter-Cutoff Current
ICEX
lEBO
DC Forward-Current
Transfer Ratio
hFE
Collector-ta-Emitter
Sustaining Voltage:
ISee Figs. 1, 2, & 121
With base open
With external base-to-
VCEolsusl
emitter resistance
VCERlsusl
IRSEI =50Q
Base-ta-Emitter
Saturation Voltage
VBElsatl
Collector-ta-Emitter
Saturation Voltage
VCElsatl
Small-5ignal Forward
Curre.nt Transfer Ratio
f '" 5 MHz
hie
f '= 1 kHz
Magnitude of Common-
Emitter. Small-Signal,
Short-Circuit, Forward Ihlel
Current Transfer Ratio
1=5 MHz
Output Capacitance:
V CB = 10 V,I = 1 MHz Cobo
Second-Breakdown
Collector Current
with base forward-
biased··
IS/b
ISee Figs. 22 & 231
Second-Breakdown
Energy with base
reverse-biased
ES/b t
RBE = 20Q,
L= 100"H
Saturated Switching
Time (Vce '" 200 V):
Rise Time
t,
(See Figs. 13. 16.17.
& 181
Storage Time
(See Figs. 14, 16,
17, & 18)
ts
Fall Time
(See Figs.15,16.
17,& 18)
tl
VCE
150
225
340
450
225
300
2
2
10
10
10
10
10
30
10
100
VBE
-1.5
-1.5
-1.5
-1.5
1.5
-6
IC
0
7503
1 Aa
1003
7503
1 Aa
1A
Ie IB
0
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
- 10 -
5-
5-
5 rnA
- 1.0 - - - - - -
- - - 1.0 - - - - rnA
1.0 2.0
- 3 - - - - - - rnA
3 3 5.0
-- 5.0 - 0.5 - 0.5
0.5 rnA
- - - - - - 10 100
- - 8 SO S SO - -
- -40 40 40 - 40 -
40 200 - - - - - -
- - - - - - 30 150
- -10 25 100 25 100 -
200
200
750B
1 Aa
7508
1Aa
0 1750 -
250· -
-2500
3000 -
3000 -
4000 -
300· -
4000 -
V
75 -
100 -
75 -
125 -
-- - - --
-1.4 1.4 -
1.4 -
- - --- -
-5
0.75 -
0.75 -
loS
-V
1.0
-
V
-200
3-3
3-3-
-100 25 350 - - - - -
200 2 - 2 - 2 - 3 -
0 - 120 - 120 - 120 - 120 pF
350 - 350 - 350 - 350 - rnA
- --~
50 - 200
200 -
50
"J
1 A 100 - - - 3 - 3 - -
- -750
75 -
-
--
- 0.5
"s
-1 A 100
- - 4- 4- -
-750 75 - - -
---6
-750 75 - - - -
--3
1 A -100 - - 3 - 3 - -
129

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2N3583-2N3585. 2N4240. 40374 _ _ _ _ _ _---,_ _ _ _ _ _ _ _ _ _ _ File No. 138
dELECTRICAL CHARACTERISTICS at Case Temperawre (T = 2!PC Unless Otherwise Specified (Can't.)
TEST CONDITIONS
LIMITS
CHARACTERISTIC SYMSOL
Thermal Resistance:
Junction-to-Case
ReJC
Junction-ta-Ambient
ReJA
VOLTAGE.
Vdc
VCE VSE
CURRENT
mAde
IC 'E IS
2N3583
40374
2N3S84
2N3585
UNITS
2N4240
MIN.IMAX MIN. MAX. MIN. MAX. MIN. MAX.
5IMa•.)
2N3583
- 5- 5 - 5
70IMa•.)
2N3583
- 70
- 70
- 70 °C/W
30 IMa •.)
-
-
-
-
-
-
40374
'In accordance with JEOEC registration data format JS-6 RDF·2 12N3583). JS-6 RDF·' 12N3584, 2N3585. 2N424O)
• CAUTION: The sustaining voltages VCEOtsuS) and VCER(sUS) MUST NOT be measured on a curve tracer. These sustaining .voltages
should "be measured by means of the test circuit shown in Fig. 1 .
•• Specified value of 'SIb for given value of VeE as base voltage is increased from zero in a positive direction.
tES/b is defined as the energy at which second breakdown occurs under specified reverse bias conditions. ES/b =112 L12,
where L is a series load or leakage inductance and I is the peak collector current from Figs. 3, 4, and 5.
<8 Pulted, pulse duration - 300 fJs; duty factor 2%.
CHANNEL ..
LI (NOTEI TO
HEWLETT-PACKARD
OSCILLOSCOPE
'r.f1&UI":A~lB¥·
CHANNEL B
CO....ON
HOTEz'L 1 -= 20 mH for VCEO(sus)
-= 5 mH for VCER(sus)
_ OT050V
(500 mAl
tU,S-I2S16f12
Fig. I-Circuit used to measure sustain·
ing voltages VCEO(sus) and
VCER(sus) for all types.
t--+,--oI....l...L VCEO'''')
-!-,_.L......V. CER -
I I II I
·...LI
Ai
1
"II
:c200 .-1-b-L-
Ai ,"
II 1
I I :1 I
I7S 2!lO 300
0 2SO 300 400
COLLECTOR-TO-EMITTER VOLTAGE (VC£l-V
92C$-IZS",RI
Fig. 2-Oscilloscope display for meas·
urement of sustaining voltages
(te~tcircuit shown in Fig. 1).
CASE TEMPERATURE (TC)- 25-C
BASE-TO-EMITTER VOL-TAGE (VSE)a-4V
EXTERNAL BASE-TQ-EMITTER RESISTANCE (RBE)a20.n
130
LO
COLLECTOR CURRENT (Ic)-A
92$5-3129
Fig. 3- Typical collector-to-emitter sat-
uration voltage vs. current for
types,?N3584 and 2N3585.
..8
"~
o
100 200 _ 300 400
INDUCTANCE IU-p.H
92CS-lOOOI
Fig. 4- Reverse-bias second breakdown
characteristics for types 2N3584
and2N3585.

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File No. 138 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N3583-2N3585. 2N4240. 40374
CASE TEMPERATURE (TCI ·25'"(;
BASE-TO-EMITTER VOLTAGE (VBE'--4V
INDUCTANCE (L). 100 ",H
CASE TEMPERATURE (Tel =2SoC
EXTREERSNISATLAN8CAESE(R-TBOEl-E• M2I0TnTER
INDUCTANCE (ll • IOOf'H
0' 10 20 30 40
EXTERNAL BASE-TO-EMITTER RESISTANCE (RBE'-D
Fig. 5-Reverse·bias second breakdown
characteristics for types 2N3584
and2N3585.
'-V·s -6 -4 -2
BASE-TO-EMITTER VOLTAGE (VBE
Fig. 6-Reverse-bias second breakdown
characteristics for types 2N3584
and2N3585.
SIb LIMITED
o 25 50 15 100 .~5 150 175 200
CASE TEMPERATURf"(TCI-OC
92SS-2796
Fig.7-Dissipation derating curves for
all types.
92S$-2666RI
Fig. 8-Dissipation derating curve for
types 2N3583. 2N3584.
2N3585. and2N4240.
92SS-2557RI
Fig. 9-Dissipation derating curve for
tvoe40374.
25
50
75
100 125
150
COLLECTOR-lO-EMITTER VOLTAGE IVCE)-V
175
92CS-2Q002
Fig. 10-Typical output characteristics
for types 2N3583 and40374.
131

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2N3583-2N3585. 2N4240, 40374 _ _ _ _ _ _ _.,....-_ _ _ _ _ _ _ _ _ _ File No. 138
COLLECTOR-TO-EMITTER VOLTAGE (VCE)· 10 Y
50 pS>i =SGf-~/~
.. 40
E
I
~ '0
I-
! 20
~
10
0
0.4
l'1 I
ii2ITflT
If
i!
(?f''!"
-/7
V/
I
/
/
--V
V
0.6
7
[7
--'
0.8
LO
BASE-TO-EMITTER VOLTAGE (VBE)-V
1.2
925$-3131
Fig. 11- Typical input characteristics
for all types.
r-......~
Z
.0
~
CASE TEMPERATURE (TC)=2S-C
VeER
I
I
~ '2N3585.2N424D
ffi> 350
~.L
:0;
~.!!30
f;!'" VeER
.z:$'
~~250
gg~!j VeER
~ 200
:z0
;;
150
10
2
N-..I
1"-
2N3584
VeEO
-- f-I- I
VeEO
- I........ ......
I2N3583.40374
I--t.... II
4
,8
10 2
2
, I4 8 103 2
VeEO
4
,8
104
EXTERNAL BASE-fO-EMITTER RESISTANCE IRSE)- n
92CS-19939
Fig. 12-Sustaining voltage vs. base-to-
emitter resistance for all types.
PULSE DURAT'ON=20~S
REPETITION RATE. 1000 PULSES/.
COLLECTOR SUPPLY VOLTAGE (VCC)-200V
CASE TEMPERATURE (TC)· 25·C
Ie,·Ie2
0,2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
. COLLECTOR CURRENT IIe)-A
92SS-3126R'
Fig. 13- Typical rise time vs. collector
current for types 2N3584 and
2N3585.
~~~~~I~~';,A~~~~: ~8to' PULSES/.
COLLECTOR SUPPLY VOLTAGE (Vea· 200 V
CASE TEMPERATURE (Te)· 25-C
IB, cIS2
132
COLLECTOR C.URRENT 'Ic'-A
92SS-3125RI
Fig. 15- Typical fall time vs. collector
current for types 2N3584 and
2N3585.
92SS-3128RI
Fig. 14- Typical storage time vs. col-
lector current for types 2N3584
and2N3585.
PULSE OURATION:20".s
REPETITION RATE: 1000 PULSES/.
IC :1 A: Ie =0.1 A
CASE TEMPERATURE (TC )=2~"C
:'"0
j 0.9
11:
g 0.6
:. 0.4
':"0
..'.I"-, 0.2
o
ts .8 ~!
2.6 .::
:'"0
I-
" 2.4 ~
:
2.2 ~
tr
~O 100 150 200 2~0 300 350
COLLECTOR SUPPLY VOLTAGE (VCc)-V
92CS-19946
Fig. 76- Typical rise time. fall time. and
storage time vs. col/ector supply
voltage for types 2N3584 and
2N3585.