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SILICON NPNTRIPLE DIFFUSED MESA TYPE
COLOR TV HORIZONTAL OUTPUT APPLICATIONS.
FEATURES
. High Voltage VCBO=1500V
Low Saturation Voltage
: V CE (sat)=5V (Max.) (I C =6A,
High Speed : tf=1.0^s (Max.)
Glass Passivated Collector-Base Junction
I B=1.2A)
Unit in nun
1&0MAX. 03.6 ±0.2
I- '
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VcBO
VcEO
1500
600
Emitter-Base Voltage
VEBO
Collector Current
Emitter Current
Collector Power Dissipation
(Tc=25°C)
ic
IE
-7
80
1. BASE
2. COLLECTOR (HEAT SINK)
& EMITTER
Junction Temperature
Storage Temperature Range
[ stg
150
-55-150
TOSHIBA
2-16D1A
Weight : 5.2g
ELECTRICAL CHARACTERISTICS (Ta=25 C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
lEBO
DC Current Gain
hFE
TEST CONDITION
V CB=500V, I E=0
VEB=5V, I C=0
V CE=5V, I C=1A
MIN.
-
-
8
TYP.
-
-
20
MAX. UNIT
M10
1 mA
-
Collector-Emitter
Saturation Voltage
v CE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Transition Frequency
fT
Collector Output Capacitance
Cob
Fall Time (Fig.)
tf
I C=6A, I B=1.2A
I C =6A, I B =1.2A
VCE=10V, I C=0.1A
VCB=10V, I E=0, f=lMHz
ICP=6A, lBl(end)=l-2A
-
-
-
-
-
Fig. tf TEST CIRCUIT
T.U.T.
2SC2482
t-jr-|
|
10MH 100MP
y=r
["
3 CURRENT PROBE
BASE CURRENT
3 5V
- 1.5 V
3 - MHz
165 - P F
0.5 1.0 MS
COLLECTOR CURRENT
10%
25>us
{M1
63.5Mb
7S 73
a.
V-/ (end)
:&90%
tf
TOSHIBA CORPORATION
906-