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T0810xH
T0812xH
STANDARD TRIACS
FEATURES
IT(RMS) = 8A
VDRM = 400V to 800V
High surge current capability
DESCRIPTION
The T08xxxH series of triacs uses a high
performance MESA GLASS technology. These
parts are intended for general purpose switching
and phase control applications.
A1
A2
G
TO220
non-insulated
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT( RMS)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current
(360° conductionangle)
Tc= 95 °C
Non repetitive surge peak on-state current
(Tj initial = 25°C )
I2t Value for fusing
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
IG = 500 mA diG /dt = 1 A/µs.
Repetitive
F = 50 Hz
Non
Repetitive
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s at
4.5mm from case
Value
8
77
70
24
10
50
- 40, + 150
- 40, + 125
260
Unit
A
A
A2s
A/µs
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
January 1995
Voltage
Unit
DM S N
400 600 700 800 V
1/5

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T0810xH / T0812xH
THERMAL RESISTANCES
Symbol
Rth(j-a)
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Rth(j-c)
Rth(j-c)
Parameter
Junction to ambient
Junction to case for D.C
Junction to case for A.C 360° conduction angle (F=50Hz)
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
IGT VD=12V (DC) RL=33Tj= 25°C I-II-III-IV MAX
VGT VD=12V (DC) RL=33Tj= 25°C I-II-III-IV MAX
VGD
VD=VDRM RL=3.3k
Tj= 125°C I-II-III-IV MIN
tgt VD=VDRM IG = 500mA Tj= 25°C I-II-III-IV TYP
IT = 11A
dIG/dt = 3A/µs
IH * IT= 250 mA Gate open Tj= 25°C
MAX
IL IG= 1.2 IGT
Tj= 25°C I-III-IV TYP
II TYP
VTM * ITM= 11A tp= 380µs
Tj= 25°C
MAX
IDRM
IRRM
VD = VDRM
VR = VRRM
Tj= 25°C
Tj= 110°C
MAX
MAX
dV/dt *
VD=67%VDRM
Gate open
Tj= 110°C
MIN
(dV/dt)c * (dI/dt)c = 3.5 A/ms
Tj= 110°C
MIN
* For either polarity of electrode A2 voltage with reference to electrode A1
Value
60
4
3
Sensitivity
10 12
25 50
1.5
0.2
2
25 50
25 50
50 100
1.65
5
2
200 500
25
Unit
°C/W
°C/W
°C/W
Unit
mA
V
V
µs
mA
mA
V
µA
mA
V/µs
V/µs
ORDERING INFORMATION
T
TRIAC MESA GLASS
CURRENT
2/5
08 10 M
SENSITIVITY
®
H
PACKAGE :
H = TO220 Non-insulated
VOLTAGE

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Fig.1 : Maximum RMS power dissipation versus
RMS on-state current.
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P (W)
12
180 O
10
= 180o
= 120o
8
= 90o
6 = 60o
4 = 30o
2
I T(RMS) (A)
0
012345678
T0810xH / T0812xH
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
P (W)
12
10
8
6
4
Tcase (oC)
Rth = 0 o C/W
2.5o C/W
5o C/W
7.5o C/W
-95
-100
-105
-110
-115
2
Tamb (oC)
-120
0 -125
0 20 40 60 80 100 120 140
Fig.3 : RMS on-state current versus case tempera-
ture.
I T(RMS)(A)
10
8
6
= 180o
4
2
Tcas e(oC)
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.4 : Relative variation of thermal impedance
versus pulse duration.
Zth/Rth
1
Zt h( j-c)
0.1 Zth(j-a)
0.01
1E-3
1E-2
1E-1
1E +0
tp (s)
1E+1 1E+2 5E+2
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Igt[Tj]
Igt[Tj=25 o C]
2.6
2.4
2.2
2.0
Ih[Tj]
Ih[Tj=25 o C]
1.8 Igt
1.6
1.4
1.2 Ih
1.0
0.8
0.6
Tj(oC)
0.4
-40 -20 0 20 40 60 80 100 120 140
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
ITS M(A)
70
60
50
40
30
20
10
Number of cycles
0
1 10
Tj initial = 25oC
100 100 0
3/5
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T0810xH / T0812xH
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : t 10ms, and cor-
responding value of I2t.
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I TSM (A). I2 t (A2s)
1000
I TS M
100
I2 t
Tj initial = 25oC
10
t (ms)
1
1 10
Fig.8 : On-state characteristics (maximum values).
I TM (A)
100
Tj initial
25oC
Tj max
10
Tj max
Vto =1.02V
Rt =0.05 0
VTM(V)
1
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
4/5
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PACKAGE MECHANICAL DATA
TO220 Non-insulated (Plastic)
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A
G
IB
C
OF
PD
N1
N
H
J
L
M
Marking : type number
Weight : 1.8 g
T0810xH / T0812xH
DIMENSIONS
REF. Millimeters
Inches
Typ. Min. Max. Typ. Min. Max.
A
10.3
0.406
B 6.3 6.5 0.248 0.256
C 9.1 0.358
D 12.7
0.500
F 4.2 0.165
G 3.0 0.118
H
4.5 4.7
0.177 0.185
I
3.53 3.66
0.139 0.144
J
1.2 1.3
0.047 0.051
L 0.9 0.035
M 2.7
0.106
N 5.3 0.209
N1 2.54
0.100
O
1.2 1.4
0.047 0.055
P
1.15
0.045
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
© 1995 SGS-THOMSON Microelectronics - All rights reserved.
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