2SA594.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SA594 데이타시트 다운로드

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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS
VIDEO AMPLIFIER APPLICATIONS.
HIGH SPEED SWITCHING APPLICATIONS.
Unit in mm
<£a3 9MAX
FEATURES:
. High Transition Frequency; fT = 200MHz (TYP.)
. Low Output Capacitance; Cob = 3.5 pF (Typ.)
. Low Saturation Voltage; VC E(sat) = -0.3V (Max.)
at Ic = -100mA , I B = -10mA
. Complementary to 2SC594
MAXIMUM RATINGS
(Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector
Ta=25°C
Power Dissipation Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
v CEO
V EBO
ic
IB
PC
T
.i
T stg
RATING
-60
-45
-5
-200
-50
750
5
175
-65-175
UNIT
V
V
V
mA
mA
mW
W
°C
°C
1. EMITTER
Z BASE
3. COLLECTOR (CASE)
JEDEC
TO - 3<
EIAJ
TC - 5.TB - 5B
TOSHIBA
2-8B1A
Weight : 1.13g
ELECTRICAL CHARACTERISTICS
(Ta=25 C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
I CBO
EBO
V CB =-45V, I F =0
ELV 5V
'
DC Current Gain
hFE(l} VCE =-1V, Ic=-10mA
(N ote.)
h FE(2)
Collector-Emitter
Saturation vnlf-agg 'CE(s ati
Base- Emitter
aturatinn Vol tagp VBE(satj
VCE =-3V, I c =-200mA
IC=-100mA, IB =-10mA
IC=-100mA
5
IB =-10mA
Transition Frequency
fT VCE S -10V, IC=-10mA
Input Resistance
'ie VCE =-10V,IE =10mA t f=200MHz
Collector Output Capacitance Cob
VCB =-10V,IE =0,f=lMHz
Switching
Time
Turn-On Time ton
Storage Time tstg
INPUT 68 Cii
OUTPUT
MIN.
40
20
100
TYP
200
3.5
40
250
Fall Time
DUTY
CYCLE ^2$, VBB =3V V o=-12V
30
Note
;
hFE(l) Classification
R : 40^80,
: 70^140, Y : 120^240
MAX,
-0.1
-0.1
UNIT
yA
MA
240
-0.3
-1.0
120
MHz
PF
155-
TOSHIBA CORPORATION

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2SA594
C
IG -vCE
LOW VOLTAOE
(
REGION)
|
-IC
X /-2C0
^
/
'
^
, ***-
-120 / s
-"* ^-
^ .-j
' '.
-"
r.
i
> -—
y
COMMON EMITTER
-50 Ta = 25 *C
-SO.,
-2.0
Lb
1.0
-C.5
mA
-"-B
nr
C -1 -2 -3 -4 -5 -6 -7
COLLECTOR-EMITTER VOLTAGE V0E (V)
-160
-120
ic -VCE ( LOW VOLTAGE REGION)
[
-ao COMMON EMITTER
=Ta 100°C
-4.0
-2.0
-—t
-1.0
1
I B =-0.2mA
11
-1 -2
|1
3 -4 -5 -6
-r
.
COLLECTOR-E:MITTER VOLTAOE VCE(V)
IC-VcE (LOW VOLTAGE REGION)
-20 C
-160
-120
-80
"-a^c
i.O
-30
COMMON EMITTER
=Ta
-55
a
C
-ac
^5
-LO
lB=--C.5mA
11
1
11
1
-1 -2 -3 -4 -5 -6 -7
COLLECTOR -EMITTER VOLTAGE VCE (V)
hjPE - I
-Ql -0.3-Q5-1 -3 -5 -10 -30-50-100-300
COLLECTOR VRRENT I c (mA)
v CE(sat) - IC
-| CO 4M0N EMITTER
=I 1(1 /I B 10
Eh > Ql
005
III
~-T. Ta=-ICOjC^-
wo d
T1^\ ~
~55
1.
-0.1 -Q3-C.? -1" -3-5-10 -30-50-100-300
COiLEOTCR CURRENT Ic (mA)
v BE(sat) - Ic
COMMON EMITTER
=1 Ta -55"C
i\ \
Ja < 5
I IOC
-Ql -C3-G5-1 -3-5 -10 -3C-50-1C0 -300
COLLECTOR CURRENT Ic (mA)
P C - Ta
Q TO Ta
1
® (INFINITE HEAT
SINK)
(2) NO HEAT SINK
1 . ('A
r>
25 50 75 ICO 125 150 175 200
AMBIENT TEMPERATURE Ta (°c)
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