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SILICON PNP TRIPLE DIFFUSED MAS TYPE
POWER AMPLIFIER APPLICATIONS.
POWER SWITCHING APPLICATIONS.
DC-DC CONVERTER APPLICATIONS.
REGULATOR APPLICATIONS.
2SA656A
2SA657A
12SA658A1
INUUS'l'KlAL ArFLIUAilUNS
Unit in mm
35.0 MAX.
FEATURES
. High Voltage : VcBO=-130V, Vceo=-HOV (2SA656A)
Complementary to 2SC519A, 2SC520A and 2SC521A.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Base
Voltage
2SA656A
2SA657A
2SA658A
v CBO
Collector-
Emitter
Voltage
2SA656A
2SA657A
2SA658A
Emitter-Base Voltage
Collector Current
v CEO
vEBO
ic
RATING
-130
-100
-70
-110
-80
-50
-5
-7
UNIT
V
V
V
A
1. BASE
2, EMITTER
COLLECTOR (CASE)
J ED EC
TO-3
TC-3, TB-3
TOSHIBA
Z-21A1A
Mounting Kit No. AC73
Weight : 12g
Base Current
IB -2 A
Collector
Power
Dissipation
Tc=25°C
(Note)
Junction Temperature
Storage Temperature Range
PC
T
3
T stg
50
25
150
-65 * 150
W
°C
°C
Note : Unit mounted a 300x300x2mm Al on a heat sink with silicone greased
mica insulator.
TOSHIBA CORPORATION
157

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A I1
2SA656 A 2SA657 A 2SA658
1
ELECTRICAL :HARACTERISITICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off
Current
2SA656A
2SA657A
2SA658A
I CBO
Emitter Cut-off Current
Collector-Emitter
2SA656A
Breakdown Voltage
2SA657A
2SA658A
DC Current Gain
lEBO
V (BR) CEO
h FE(l)
h FE(2)
Saturation Collector-Emitter
Voltage
Base- Emitter
Transition Frequency
Collector Output Capacitance
Switching
Time
Turn-on Time
Storage Time
Fall Time
VcE(sat)
vBE(sat)
fT
Cob
ton
tstg
tf
TEST CONDITION
MIN. TYP. MAX. UNIT
VCB=-130V, I E=0
VCB=-100V, I E=0
VCB=-70V, I E=0
VEB=-5V, I C=0
- - -100
- - -100 PA
- - -100
- - -5 mA
-110 -
-
I c=-50mA, IB=0
VcE=~5V, Ic=-1A
VCE=-5V, I C=-5A
-80 - - V
-50 -
-
30 -
15 -
300
-
I C=-5A, IB=-1A
- -0.7 -2
- -1.4 -2.5 V
VCE=-10V, IC=-1A
VCB =-50V, E=0 , f =lMHz
-
-
-
5 - MHz
150 -
pF
0.5 -
(Fig.)
-
3.0 -
us
- 0.4 -
Fig. SWITCHING TIME TEST CIRCUIT
INPUT ZZ0SX
O 1—vw-
20 mS
+ 3V
DUTY CYCLE ^ Z%
O
-30 V
TOSHIBA CORPORATION ii
n m mi u u M u mi mil nin1 1
1 1 1 1 k11
1 1 1 it i
111 11
11
1 1 1 it
111
ini 1 1
1 1 1 111 1 11
mimiii tmiiti it 1 1 1 1 1 iiiimii it t
n tni it 1 1
11
iiiiiiiiiiiiiimiiiiiiiiiiimiiiiiiniiiiiiiiiiiiimiiiiimiiiiiiiim
-158-

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11
2SA656A 2S A657A 2SA658A
COMMON
-8 EMITT ER
T c 25 °C
-6
-4
-2
CE
-2 00
-150
-100
1
-SO
IB
-10
COMMON EMITTER
Tc = 1
"C
-300_
-2 0,
-150
-10 0_
-50
IB = -20 mA
n
-1 -2 -3 -4 -5
COLLECTOR-EMITTER VOLTAGE
Ix C
V CE
VCE
v
()
-10
COMMON EMITTER
T c = " 5 5 "C
-6 00
-5 00
-400
.
-300
-200
-1 50
-50
=
*B
-20
mA
«5
-1 -2 -3 -4
COLLECTOR -EMITTER VOLTAGE
V CE(sat)
-3.0
- COMMON EMITTER
%/** = 10
-1.0
^"C
-5
VCE (y)
H <1
-0.5
H O -03
S>
H
I 25
KO
-ai
^SO M
E-< t-i
O<
: t c = ioo°c
-a 05
HK
JD
-aos
25
/rftf
O<
o ra
-55
1_
-aoi -ao3 -ai -o.3
-i
-3
-10
COLLECTOR CURRENT WI C
-1 -2
-3 -4
-5
COLLECTOR-EMITTER VOLTAGE VCE (V)
hF E
300
-
Tc
=
100
°
"
z
o
Mil1 I
VCE =-5V
inn
" 25
50
30 -55
-IV
10
5
3 " CEOMMIMTOTNER
-001 -003 -Ol -03
-1
COLLECTOR CURRENT
J
C
V BE
-10
-3
I c (A)
-10
-3
-1
-03
P
oo
i
/
II
o /m
1
/
/
/ir
If
'
COMMON
EMITTER
V/«= -5V
nm
1 _l
L.
-02 -04 -06 -08 -1JD -12 -14 -lfi ~X8 -2.0
BASE-EMITTER VOLTAGE ^BE (V)
lllSllMllllll)lUt1iM1MltMttMI1it1ttt)ltmt)11))Mll)linil11)IIMIIIIl t f JII4IIIIIIIIHM1IIMII M M M1 1 1 1 1 1 I I J I i 1 1 J I 1 1 1 1 f 1 1 1 1
Mf 1 1 1 1 1 J I ri 1 1 1 1 1 1 1
1 1f If1 1 1 1
CORPORATIONtlllM
illfllllll
II ~S~C=>^3
^^^X.
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2SA656A 2S A657 A 2SA658A
-
be ( sat)
I,
COMMON EMITTE R
IG/IB = 10
K>
ZEh
OEh
HH
SH
W<
K'
DKl
CO E-<
lI
i
j
1
|
T = -55°C
-Q5
-as
35
\'
1C
-ai
-0.01 -ao3
-ai
-0.3
-1
COLLECTOR CURRENT
-3
ic (A)
'ofc it - V T
BQ H
nu
zS5
<H H<
M
OC )
<! <i
H< Ph
<o
<!
u
C-
n
1
1
°ot>
mEh
&q Eh
OS
100
0.1
as as 1
3 5 10
REVERSE VOLTAGE V R (V)
SO 50
cTi
m Ph 40
T.
® Tc = T a
(.INFINITE HiMT tJIMK;
® 200X200X 2mmAi
© (HEAT SINK)
150X 150X 2mm
®
(HEAT SINK)
100X100X 2mmA^
©
(HEAT SINK)
70x70X2mmA^
(HEAT SINK)
SAFE OPERATING AREA
c^
-®
-®
~
r(.
2 5 50
7 5 10
125 150
AMBIENT TEMPERATURE T a fC)
-a3
-30 -50 -100
JOLLECTOR -EMITTER VOLTAGE
TOSHIBA CORPORATION
-160-