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_________________________________ File No. 675
OOcn5LJD
Solid State
Division
Power Transistors
2N5954 2N6372 2N6467 40829
2N5955 2N6373 2N6468 40830
2N5956 2N6374
40831
JEDEC TO·66
H·1340
JEDECTO·66
With Integral Heat Radiator H·1470A
Silicon N-P-N and P-N-P
Medium-Power Transistors
General·Purpose Types for
Switching Applications in Military,
Industrial, and Commercial Equipment
.Features
• 2N5954. 2N5955, 2N5956 complements to 2N6372. 2N6373, 2N6374
• Low saturation voltages
• Maximum-safe-area"of-operation curves
• Thermal-cycle ratings
• Hermetically·sealed JEDEC TO·66 package
• High gain at high current
RCA·2N5954. 2N5955, 2N5956. 2N6467. and 2N646sA are
multiple·epitaxial p·n·p transistors. RCA·2N6372. 2N6373,
and 2N6374- are multiple·epitaxial n·p·n transistors. Theyare
complements to 2N5954. 2N5955, and 2N5956. These devices
differ in voltage ratings and in the currents at which the para·
meters are controlled. All are supplied in the JEDEC TO·66
package.
Types 2N5954, 2N5955, and 2N5956 are available with
factory·attached heat radiators as RCA types 40829, 40830.
and 40831, respectively. The other devices may be obtained
with heat radiators on special order. Radiator versions are in·
tended for printed·circuit·board applications, and differ elec·
trically from their basic counterparts only in device dissipation
(5.8 W up to 25°C ambient! and thermal resistance (30°CIW
max. at TA = 25°C).
• Formerlv RCA Dev. Nos. TA7264, TA7265, TA7266, TA8710, and
TA8709. respectively.
• Formerly RCA Dev. Nos. TA8352, TA8353. and TA8354, respectively.
MAXIMUM RATINGS,Absolute-Maximum Values:
..:N:::·"P·"'N'-_....!:2!!N!::63::;7"'4'--'2:::N:::6:::37=3_-=2"'N:::6:=37!-'2"-_ _ _ _ _ _ _ _ __
P·N·P
2N5956.
40831.
2N5955.
40830.
2N5954.
40829.
2N6467.
·COLLECTOR·TO·BASE VOLTAGE .............
COLLECTOR·TO·EMITTER VOLTAGE:
* With 1.5 volts (V BE) of reverse bias, and external
baso!-to-emitter resistance (RSE) "" 100 n ....... .
With external base-ta-emitter
resistance (R SE) = 100 11 .................•..
With base open ........•.........••.......•
*EMITTER·TO·BASE VOLTAGE ..........•......
·CONTINUOUS COLLECTOR CURRENT ........ .
·CONTINUOUS BASE CURRENT .............. .
TRANSISTOR DISSIPATION:
At case temperatures up to 25°C .••............
V CBO
V CER
V CEO
VEBO
IC
IB
At ambient temperatures up to 25°C ......•....
At case temperatures above 2SoC .•........•...•
*TEMPERATURE RANGE:
Storage and Operating (Junction) .............. .
*PIN TEMPERATURE (During Soldering):
At distances ~ 1/32 in. 10.8 mm) from
seating plane for 10 s max. . ................. .
50 70 90 110
50 70 90 110
45 65 B5 105
40 60 80 100
5 55
6664
222 2
40
12N6374)
(2N5956)
5.8
(408311
40 40 40
(2N6373) (2N6372) (2N6467)
(2N59551 (2N59541
5.8 5.8
(40830)
(408291
See Figs. 1, 2, and 3.
65 to +200
+235
130 V
130 V
125 V
120 V
5V
4A
2A
40
(2N64661
w
III In accordance with JEDEC.registration data format JS-6-RDF-2 (all types except 40829, 40830, and 40831)
• For ~n-p devices, voltage and current values are ne~tive.
264
9·74

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File No. 675 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N5954-6, 2N6372-4, 2N6467-B, 40B29-31
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25'C unless otherwise specified
CHARACTERISTIC
Collector Cutoff Current:
With external base-to·emitter
resistance (RBE) = 100 n
With base·emitter junction
reverse-biased,
(R8E) = lOOn
* With base-emitter junction
reverse.biasedb(RBE) = 100 n,
andTC=150 C
With base open
Emitter Cutoff Current
DC Forward·Current
Transfer Ratio
Collector·to·Emitter
Sustaining Voltage:
With base open
SYMBOL
ICER
ICEX
ICEO
lEBO
hFE
TEST CONDITIONs+
VOLTAGE
Vdc
VCE VBE
35
55
75
45 -1.5
65 -1.5
85 -1.5
45 -1.5
65 -1.5
85 -1.5
2N6374
CURRENT 2N595s+
Adc 40831·
IC IB Min. Max.
100
-- --
- 100
-
-
--
-2
--
--
25
45
65
-5
-1
--
--
- 0.1
4 3" 20 100
4 2.5a - -
4 2a - -
4 6a 5 -
LIMITS
2N6373
2N595s+
40830·
Min. Max.
--
100
-
--
-
100
-
-2
--
--
-1
--
- 0.1
--
20 100
--
5-
2N6372
2N5954· UNITS
40829·
Min. Max.
-
-
-
100
---
100
jJ.A
jJ.A
--
-2
--
--
-1
- 0.1
--
--
20 100
5-
mA
rnA
rnA
VCEO(sus)
O.la
40b -
60b -
SOb -
With external base·to·
emitter resistance
(RBE) = 100 n
VCER(sus)
O.la
45b -
65b -
85b -
V
With base·emitter
junction reverse-biased,
(RBE) = 100 n
Base-to-Emitter Voltage: All types
All types
All types
2N6372·2N6374
Collector·to·Emitter
Saturation Voltage
VCEX(sus)
VBE
VCE(sat)
4
4
4
4
-1.5 O.la
50b -
3a
2.5a
2a
6"
3" 0.3
2.5a 0.25
2a 0.2
-
-
-
-
-
-
-
2
-
-
3
1
-
-
70b -
--
-2
--
-3
--
-
-
-1
90b -
--
--
-2
-3
--
--
-1
V
V
* Magnitude of Forward·
Current Transfer Ratio
(f = 1 MHz):
2N6372-2N6374
2N5954·56, 40B29·31
F.orward·Current
Transfer Ratio
(f = 1 kHz)
Ihfel
hfe
4
4
4
-1
-1
4-
5-
4
5-
4
5
--
0.5
25 -
25 -
25 -
Thermal Resistance:
Junction-to'case, 2N5954·56,
2N6372-74
Junction·to·Ambient
40829-40831
ROJC
ROJA
- 4.3
- 30
- 4.3
- 30
- 4.3
·CIW
- 30
*In accordance With JEDEC registration data format JS-6 RDF-2. a Pulsed, pulse duration = 300 P.S, duty factor = 1.8%.
• For p-n-p devices, voltage and current values are negative.
b CAUTION: Sustaining voltages VCEO(sus}, VCER(sus), and VCEX(sus)
MUST NOT be measured on a curve tracer. (See Figs. 19 & 20),
265

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2N5954-6. 2N6372-4. 2N6467;8. 40829-31 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 675
ELECTRICAL CHARACTERISTICS. At Case Temperature ITC) = 25"C unless otherwise specified
CHARACTERISTIC
TEST CONDITIONS
SYMBOL VOLTAGE
Vdc
CURRENT
Adc
VCE VBE IC
IB
LIMITS
2N6467
2N6468
UNITS
Min. Max. Min. Max.
* Collector Cutoff Current:
With external base-to-emitter
resistance (RBE) = 100 n
ICER
-95
-100
- -100 -
-- -
- p.A
-100
* With base-emitter junction
reverse-biased and external base-
to-emitter resistance (RBE) =
lOOn
* With base-emitter junction
reverse-biased, RBE = lOOn,
and TC = 150°C
* With base open
* Emitter Cutoff Current
* DC Forward-Current Transfer Ratio
* Collector·to-Emitter Sustaining
Voltage:
With base open
ICEX
ICEO
lEBO
hFE
-100
-120
-100
-120
-50
-60
-4
-4
VCEO(sus)
1.5
1.5
1.5
1.5
5
-1.5a
_4a
-O.la
-
-
-100 -
--
-
-100
p.A
- -2
--
--
- -2
rnA
- -1
--
--
- -1
mA
- -0.1 - -0.1 mA
15 150 15 150
5-
5-
-100b -
-120b -
With external base-to-emitter
resistance (RBE) = 100 n
With base-emitter junction
reverse-biased and external
base-to-emitter resistance
(RBE) = lOOn
* Base-to- Emitter Voltage
* Collector-to-Emitter
Saturation Voltage
* Magnitude of Common Emitter,
Small-Signal Short-Circuit,
Forward-Current Transfer
Ratio (f = 1 MHz)
* Common-Emitter, Small·
Signal, Short-Circuit, Forward-
Current Transfer Ratio
(f = 1 kHz)
VCER(sus)
_O.la
-105b -
-125b -
V
VCEX(sUS)
1.5 -O.la
_110b -
-130b -
-4
VBE -4
VCE(sat)
_1.5a
--4a
- -2
- -2
- -3.5 - -3.5
--1.5a -0.15 - -1.2
-1.2
_4a -0.8
- -4
- -4
V
V
Ihfel
-4
-1
5-
5-
hfe --4
-0.5
25 -
25 -
Thermal Resistance:
Junction-ta-case
ROJC
- 4.3 -
4.3 °C/W
a Pulsed, pulse duration =300 IlS, duty factor = 1.8%.
b CAUTION: Sustaining voltages VCEO(sus), VCER(sus), and VCEX(sus} MUST NOT be measured on a curve tracer. (See Figs. 19 and 20).
* In accordance with JEDEC registration data format JS-6 RDF-2.
266
TERMINAL CONNECTIONS
ALL JEDEC DEVICES
Pin 1 - Base
Pin 2 - Emitter
Case, Mounting Flange - Collector
TERMINAL CONNECTIONS
40829,40830,40831
Pin 1 - Base
Pin 2 - Emitter
Heat Radiator - Collector

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File No. 675 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _. 2N5954-6, 2N6372-4, 2N6467-8, 40829-31
<t
I
U
H
Iz-
W
aIr:
::l
u
VCEO MAX. =.;: ~g ~ \~~~~~~f
VCEO
MAX.=+- 8800VV
(2N5954,
(2N6372)
VCEO MAX·=-IOOV (2N6467)
VCEO MAX. =-120 V (2N6468)
46
46
COLLECTOR -TO-EMITTER VOLTAGE (VCE)-V
Fig. 1 - Maximum operating areas for all types.
46
92CS-22477RI
S 150
1L
~ 125
~
~ 100
a~
~~75
",0
~>
!~ 50
a
o 25 50 75 100 125 ISO 175 200
EFFECTIVE CASE TEMP. OR CASE TEMP. I TEFF OR Tel--C
90!CS-21992
Fig. 2 - Current derating curve for all types.
.. ...;0
;1t-
I'"
6 ~!60
;~
~~5
~~
;a ~4
"""~'aN'"~r3
~i5
~t~
j$40
,,~
rrfli
~:30
."~t3
~ ~2
"~~iNlzl20
,,'" ..e "'i ",,13
:l
1 )(1- 10
~f
"0 0
~IOO
~BW
'OW
-50 0
~'&.
0. .
" "..~.'.to"V.
'&
~'to
'I>.. '!'~ ~
.....'9""'!;>.~,
" !'
.0 100 150
CASE OR AMBIENT TEMPERATURE ITe OR TA)--C
92CS-22473
Fig. 3 - Dissipation derating curve for all types.
267

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2N5954-6, 2N6372-4, 2N6467-8, 40829-31 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No_ 675
COLLECTOR-TO-EMITTER VOLTAGE (VeE'- 4 v
..
E
I 200
3'
..B... ISO
;;\,
00
o 0.5
1.5
BASE-YO-EMITTER VOLTAGE (VSE1-V
92LS-353tRI
Fig. 4 - Typical input characteristics for all types. •
CASE TEMPERATURE (Te). 25·C
,0
,00
00
,~o
10
10 12
COLLECTOR -TO-EMITTER VOLTAGE (VeE) -
v
92LS-3!:127RI
Fig. 6 - Typical output characteristics for 811 types. •
t COLLECTOR-lO-EMITTER VOLTAGE (VCEI"' 4V
400
~
~ 200
CAJE TEJPERlrUE tTcJ 125·C
:t;:c
r--~ 100
* - -~ 80
I- 60.......-
15
-''~"" 40
-40·C
!"'" 20
g
10
8
~
,'\......... ~
~~
4 ••
0.01 0.1
4 ••
4 ••
10
COLLECTOR CURRENT l1c)-A
92CS-1966B RI
Fig. 5 - Typical de beta charaeteristics for 2N6372, 2N6373,
and2N6374_
~ COLLECTOR-TO EMITTER
VOL-TAGE (Vc,,) "-4V
0
~ 400
CAS! TEMJERJTJR~(7:
-ffi -£t!~
!;) 200
~ ~r--.
,
I-
.... 100
ffi 80
a'" 60
6 40
i
~ 20
"" 10
-40 oCr---
"-
""-
'\.\
~~
r\
468
468
••
-0.01
-0.1
-I
-10
COL-L-ECTOR CURRENT {IC}-A
92CS-18009
Fig. 7 - Tvpical dc beta characteristics for 2N5954 - 2N5956
and 40829 - 4083'_
COLLECTOR-fO-EMITTER VOLTAGE IVe ). 4V
. ." }'
I
~4
..," Xl
!!!
i 3 ::
a iI!t!
.2 15
~~
g~
J.Jr.
0.5 I 1.5
8ASE-TO,:,EMITTER VOLTAGE IVBEI- V
92LS-3!129R1
Fig. 8 - Typical tfBnsfer characteristics for all types. •
v8 COLL-ECTOR-TO- EMITTER VOL-TAGE (VCE)a4
~0
~
r-.~
:_~ASE
2
100
1~.1.lJ.tEJpE1R1TURE 1..
"~
C$.
c
~ -40·C
: -::l ~
, r~--.".'" ~I-
I-
~~
~"'" ••1<>
.. .. ..,~ 4
~
g
I
,4
,
4
,4
-0.01
-0·1
-I
-10
COL-L-ECTOR CURRENT IIC)-A
92CS-22539
Fig. 9 - Typical dc beta characteristics for 2N6467and 2N6468.
• For p-n-p devices, voltage and current values are negative.
268