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File No. 356 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
OO®LJD
Solid State
Division
RF Power Transistors
40608
RCA-40608 is an epitaxial silicon n-p-n planar transis-
tor. It is especially designed for operation as a Class A.
wide-band power amplifier in VHF circuits.
The features of high gain-bandwidth product and low
cross-modulation make the 40608 especially suited for
use in CATV and MATV systems.
SILICON N-P-N "overlay"
TRANSISTOR
For Class A Wide-Band
*Formerly RCA Dcv. Type No. TA2761
CATV and MATV
Applicatiations
MAXIMUM RATINGS, Absolute·Maximum Values:
COLLECTOR-TO-BASE VOLTAGE .. VCBO 40 V
COLLECTOR-TO-EMITTER
VOLTAGE:
With external base-ta-emitter
resistance. (RBE) = lOOn ..•.•. VCER 40 V
EMITTER-TO-BASE VOLTAGE . . . . . VEBO 2 V
COLLECTOR CURRENT •...•.•.• IC
0.4 A
TRANSISTOR DISSIPATION . . . . . . . PT
At case temperatures up to 250 C . . . . . . 3.5 W
At case temperatures above 25o C. . . . . . See Fig. 1.
TEMPERATURE RANGE:
Storage & Operating (Junction). . . . . -65to + 200 °C
LEAD TEMPERATURE <During soldering):
At distances 2!: 1/32 in. <0.79 mm) from
seating plane for 10 s max..•..••...
230 °C
Features:
o High Gain-Bandwidth Product
o Low Cross-Modulation
H-1381
JEDEC TO·39
CASE TEMPERATURE _·c
92LS-1224RI
Fig. 1- Dissipation Derating Curve
11-73
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40608 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 356
=ELECTRICAL CHARACTERISTICS, Case Temperature 25 0 C
Characteristic
Coliector·Cutoff Current
Coliector·to·Base
Breakdown Voltage
Symbol
ICED
Test Conditions
DC
Collector
Volls
DC
Current
(mA)
VCB VCE IE IB IC
20 0
V(BR)CBO
0 0.1
Limits Units
Min. Max.
100
40
"A
V
Collector·to·Emi tter
Voltage (Sustaining)
VCER(sus)
50" 40
V
Em itter·to·Base
Breakdown Voltage
V(BR)EBO
0.1 0 2
V
Coliector·to·Emi tter
Saturation Voltage
VCE(sat)
10 50
1.0 V
Coliector·to·Base Capacitance
(Measured at 1MHz)
Cob 30
0
3.0 pF
Gain·Bandwidth Product
DC Forward·Current
Transfer Ratio
fT 15
hFE 15
50 700
MHz
50 35 120
Voltage Gain
(See Fig. 2.)
VG 15
50 11
dB
Cross Modulation
@46dBmV(See Fig. 3.)
CM 15
50 -57 (Typ.) dB
= =a Pulsed through an inductor (20 mH); duty factor 50~,o; RSE 1000..
92LS-122~RI
Generator No.1 & No.2
Matching Nel\vorJ, No.1
& No.2:
Combiner:
Variable Attcnuator:
Field Strength Meter.
with Detector Output:
Potentiometer:
Filter:
AC Voltmeter:
Hewlett-Packard, HP608D,
or ('quivalent
50 to 75.0
20 dO isolation between generators
As required
50-220 MHz
100kD
1000Hz
Ballantine 861, or equivalent
Fig. 2· Block Diagram for Cross·Moc/ulation
Test Set·Up
OPERATING INSTRUCTIONS FOR
CROSS·MODULATION TEST
1. Set up equipment as shown in Fig. 2.
2. Set generator No.1 to 150 MHz modulated 30% by 1000 Hz,
and tunc field strength meter to 150MHz.
3. Adjust output of generator No.1 to give rated output of
the amplifier.
4. Adjust potentiometer to calibrate voltmeter for a convenient
level. This level then corresponds to 100% cross modulation.
5. Remove modulation.
6. Set generator No.2 to 210MHz modulated 30% by 1000Hz
and tune field strength meter to 210 MHz.
7. Adjust output of generator No.2 to give rated output of the
amplifier. (If the amplifier hus a flat response then the out-
put of the two signal generators will be equal,)
8. Tune field strength meter to 150 MHz CW and read voltmeter.
9. Turn voltmeter to proper scale for reading. Calculate per-
centage of cross modulation based upon 100% level set in
step 4.
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File No. 356 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 40608
"4 c 1, C2 , CS: 0.0021LF
C3: 7-100 pF, ARCO 423,
or equiva1ent
I~T
C4 : .031L F
C6 , C7: 1,500 pF
CS ' Cn: S~OpF, ARCO 404,
or equivalent
R 1: 3900, Y..W
R2: 6.S0, Y..W
4
BIFILAR WINDINGS
a CONNECTIONS
R3: 3300,1 W
R4: 2700, Y..W
T: 4 turns No. 30 wire. bifilar
wound; toroidal core: 3/8 in. OD,
3/16 in •. !D, liS in. thick, IGC'
type Q-l, or equivalent.
*Indiann General Corp., Electronics/Ferrites Div.,
Keasbey, N.J.
Fig. 3·RF Amplifier Circuit for Voltage Gain Test
TYPICAL ADMITTANCE CHARACTERISTICS
(Common·Emitter Circuit)
100
FREQUENCY-MHz
92LS-1234R2
Fig. Forward Transfer Admittance
t3 "I~ ~
~AIcMO(LllIEECNTTO
R-TO·EMITTER
TEMPERATURE
VOLTS (VCE)=20
(TA):25 DC
1
JII' 50!
b';
~~; ,
20--
-
--
--.-1-- --:-J"V/~~--'+---+f---1
.~.o.u .~-_ I..-~--I---l--+--l-,-1I--1---$.til;, ---- ~---
l8z .D'".
J..l.f'~" ~w
----- --"~&:
i! I i~
1.0 f--f--L.-l---l-'_~.1~:-,(~1,":."-1(.-J,,.---------
1E'"25, 50,OR 75
~--
~ ~ .....
wffi '~" .5
~~
----- --- -_._----
~o
lOa
F'REOUENCY-MHz
92LS-J238R2
Fig. 5 - Reverse Transfer Admittance
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40608 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _~_ _ _ _ _ _ _ _ File No. 356
TYPICAL ADM(TTAHCE CHARACTERISTICS
(Common.Emitter Circuit)
C°lfof~~~;~ITTER
0
..J"AMBIENT TEMPERATURE
si , .I;EE
::II 40
I ., .. ;::...aiii
ITA)z25-C
, l~50,
, ' .... 11!t_
" ....::: ...p..JlRE.~i,.S\1.E.'·
i~
l),f.: ;.~\\..\..\
E.ll\11E.:
'::0
O'::::i
30
.0
. -~z!!_
ti~
~,'" ,
iii'jil'"! 20
IE·25
<>I! f--
i~
50 r--.....
~m 10
il!i
70
~
100
fREQUENCY - MHz
92LS-1236R2
Fig. 6· Input Admittance
COLLECTOR-lO-EMITTER
AM:iEL~~ ~;~~~~:URE H+-----I----1
(TA) -2S·C
::::;.-- 7'
:=====fce-:':f-+-+--l-+--I-,E.~ MILLIAMPERES IIEI-15_
E.:~::_
_--
2.5
IS e 100
FREQUENCY -MHz
.2LS-1257R2
Fig. 7 •Output Admittance
1000 CASE TEMPERATURE(Tc)-IOO·C
.. E
I
Ie MAX .
4
1'-.u
H
.. z
~
~OT'SPOT TEMPERATURE
{TJS'-ZQO ·C
.. §IOO
<>
0'"
~4
NOTE:
TJS IS DETERMINED BY
8 USE OF INFRARED
SCANNING TECHNIQUES
10
2'~
'00
COLLECTOR-lO-EMITTER VOLTAGE (VCE'-V
92CS-228!57
Fig. 8, Safe Area for DC Operation
TERMINAL CONNECTIONS
lead 1 - Emitter
lead 2 - Base
lead 3 - Collector, Case
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