40853.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 40853 데이타시트 다운로드

No Preview Available !

File No.49B _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
ffil(]5LJD
Solid State
Division
Power Transistors
40850 40851
40852 40853
40854
40850
40851
JEDECTO·66
40852
40853
40854
JEDEC TO·3
450-V Silicon N-P-N Types
For Off-Line Switching-Regulator Type
Power-Supply Applications
Features:
• High·voltage ratings for operation from power lines without
a step-down transformer
" Popular JEDEC TO·3 and TO·66 hermetic packages
Applications:
g For use in switching-regulator supplies which feature:
- A substantial reduction in size and weight due to
elimination of the 60·Hz power transformer.
- Operation with a substantial reduction of heat
RCA 40850-40854, inclusive, are silicon n·p·n power
transistors,selected from RCA's line of silicon power transis-
tors,for power·supply applications. Their high·voltage ratings
(450 V) permit operation directly off the power line thereby
eliminating the heavy and bulky 60-Hz power transformer.
Their fast switching speeds (t r plus tf equal to less than 2.0
liS) permit operation above the audio·frequency range (20 to
30 kHz) for quiet performance, and permit the use of small
ferrite-core transfqrmers for changing the voltage level.
These types have sufficient voltage capability to be used as
push-pull inverters or pulse-width-modulated inverters oper-
ating directly off the 120·V power line.
a 5·V, off·line supplies with current ratings of
25,50, 100, or 200 A
" 30·V, off·line supplies with current ratings of
5, 10,20, or 40 A
Types 40850-40854 have sufficient voltage capability to
operate as switching regulators off a 240·V line; for 120·V
lines, the prototypes can be used.
A brief description of these types, together with prototype
identification, is given in the tables on pages 2, 3, and 4.
MAXIMUM RATI NGS, Absolute-Maximum Values:
40850
COLLECTOR·TO·BASE VOLTAGE,
VCBO
COLLECTOR·TO·EMITTER
SUSTAINING VOLTAGE:
With base open, VCEO(sus)
450
300
With external base-ta-emitter
resistance (RBE)S.50 n,
VCER(SUS)
EMITTER·TO·BASE VOLTAGE,
VEBO
COLLECTOR CURRENT, IC
Continuous and Average
Peak (10 ms max.)
400
6
2
5
CONTINUOUS BASE CURRENT, IB
• Formerly RCA40832.
40851
450
350
375
9
7
10
4
40852"
450
40853
450
40854
450
V
350 300 300 V
375 375 325 V
9 6 6V
7 10 15 A
10 15 30 A
4 5 10 A
Continued on following page.
11·73
439

No Preview Available !

40850-40854 _ _ _ _ _ _ _ _ _ _ _ _ _---..,._ _ _ _ _ _ _ _ _ _ _ File No. 498
MAXIMUM RATINGS (cont'd):
TRANSISTOR DISSIPATION, Pr
(Power Dissipation-Limited Region')
At case temperaures up to 250 C
At case temperaures above 250 C
and in the IS/b-Limited Region'
TEMPERATURE RANGE:
Storage & Operating (Junction)
PIN TEMPERATURE (During
Soldering):
At distances>1/32 in.
(O.B mm) fro-m case for 10 s max.
40850
40851
40852-
40853
40854
35
45 100 100
175
See derating curves in prototype bulletins.
_ - - - - - - - - - - 6 5 to +200 °c - - - - - - - -
_-----------------------2~oC-------------_.
W
... Safe-operating-area cu~es for prototype devices should be extended to the maximum values of collector current given for these devices .
• Formerly RCA-40832
TERMINAL CONNECTIONS (All Types)
Pin 1 . Base
Pin 2 . Emitter
Mounting Flange, Case· Collector
Type 40850 (For 5-V, 25-A & ~-V, 5-A Power Supplies)
Package: JEDEC TO-66
Application Information: See "RCA Power Circuits" manual SP-52 and RCA Application Note AN3065
ELECTRICAL CHARACTERISTICS,At Case Temperature (TCi =25'1C Unless Otherwise Specified
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
Collector-Cutoff Current:
With base reverse biased
Collector-to-Emitter Voltage
With base open
ICEV
.ICEV
VCEO
VCE =450 V, VBE = -1.5 V
VCE = 450 V, VBE = -1.5 V, TC = 1250 C
IC = 0.2 A,IB = 0
Collector-to·Emitter Voltage
With external base-to-
emitter resistance (RBE)
VCER
IC = 0.2 A, RBE = 50 n
Emitter-to-Base Voltage
VEBO
IE=5mA,lc=0
DC Forward·Current Transfer
Ratio
hFE
IC = 0.75 A. VCE = 10 V
Collector-ta-Emitter Saturation
Voltage
VCE(sat)
IC = 2 A. IB = 0.4 A
Base·to·Emitter Saturation
Voltage
VBE(sat)
IC=2A,IB=0.4A
Second-Breakdown Collector
Current:
With base forward biased
Second-Breakdown Energy:
With base reversed biased
ISIb
ES/b·
VCE = 100V
L = 100 /lH, IC(PEAK) = 2 A. R = 20 n
VBE=-4V
a For characteristics curves and test conditions, refer to published data for prototype 2N3585 IFile 1381.
LIMITS
MIN. ,MAX.
- 0.2
-2
300 -
400 -
6-
25 -
- 2.0
- 2.0
0.35 -
0.2 -
UNITS
mA
mA
V
V
V
V
V
A
mJ
440

No Preview Available !

File No. 498 - - - - - - - - - - - - - - . . , . . . -_ _ _ _ _ _ _ _ _ _40850-40854
Type 40851 (For 5·V, 50·A & 30·V, 10·A Power Suppliesl
Package: JED EC TO·66
Appiications Information: See "RCA Power Circuits" manual SP·52 and RCA Application Note AN4509
ELECTRICAL CHARACTERISTICS At Case Temperature (TCI ~ 2ff'C Unless Otl,erwise Specified
CHARACTERISTIC
Collector-Cutoff Current:
With base reverse biased
Collector-ta-Emitter Voltage
With base open
SYMBOL
ICEV
ICEV
a
VCEO
TEST CONDITIONS
VCE ~ 450 V, VBE ~ -1.5 V
VCE ~ 450 V, VBE - -1.5 V, TC = 1250 C
IC = 0.2 A, IB = 0
LIMITS
MIN
MAX.
- 0.5
-5
350 -
Collector-ta-Emitter Voltage
With external base-to-
emitter resistance (RaE)
Emitter-ta-Base Voltage
DC Forward-Current Transfer
Ratio
Collector-ta-Emitter Saturation
Voltage
a
VCER
VEBO
hFE
VCE(satl
IC = 0.2 A, RBE = 50 n
IE = 1 rnA, IC = 0
IC = 1.2 A, VCE = 1.0 V
IC = 4 A, IB = 0.8 A
375 -
9-
12 -
-3
Base-ta-Emitter Saturation
Voltage
VBE(satl
IC=4A,IB=0.8A
-2
Second-Breakdown Collector
Current:
With base forward biased
Second-Breakdown Energy:
With base reversed biased
a
ISlb
a
ESIb
VCE = 50 V
L = 100 jlH, IC(PEAKI = 3 A, R = 50 n
VBE=-4V
0.9
0.45
-
-
a For characteristics curves and test conditions, refer to published data for prototype 2N6079 (File 492).
UNITS
rnA
rnA
V
V
V
V
V
A
rnJ
Type 40852 (For 5·V, 50·A & 30·V, 10·A Power SuppliesI
Package: JEDEC TO·3
Applications fnformation: See ;'RCA ·Power circuits" manual Sp·52 and RCA Application Note AN4509
ELECTRICAL CHARACTERISTICS At Case Temperature (Tci ~ 2!f1C Unless Otherwise Specified
CHARACTERISTIC
Collector-Cutoff Current:
SYMBOL
ICEV
TEST CONDITIONS
VCE = 450 V, VBE ~ -1.5 V
LIMITS
MIN.
-
MAX.
0.5
With base reverse biased
ICEV
VCE = 450 V, VBE =-1.5 V, TC = 125°C
-
5
Collector-to-Emitter Voltage
With base open
a
VCEO
IC = 0.2 A, IB = 0
350 -
Collector-to-Emitter Voltage
With external base-to-
emitter resistance (RBE)
Emitter-to-Base Voltage
DC Forward-Current Transfer
Ratio
Collector-to-Emitter Saturation
Voltage
Base-to-Emitter Saturation
Voltage
a
VCER
VEBO
hFE
VCE (satl
VBE(satl
IC = 0.2 A, RBE = 50 n
IE = 1 rnA, IC = 0
Ie = 1.2 A, VCE = 1.0 V
IC = 4 A, IB = 0.8 A
IC =4A,IB =0.8A
375 -
9-
12 -
- 3.0
- 2.0
Second-Breakdown Collector
Current:
With base forward biased
Second-Breakdown Energy:
With base reversed biased
a
ISIb
a
ESIb
VCE = 40 V
L =100jlH,IC(PEAKI = 3 A, R - 50n
VBE = -4 V
2.5
0.45
-
-
a For characteristics curves and test conditions, refer to published data for prototype 2N5840 (File 410).
UNITS
rnA
rnA
V
V
V
V
V
A
rnJ
441

No Preview Available !

40850-40854 _ _ _ _ _ _ _ _ _ _ _ _ _-..,.._ _ _ _ _ _ _ _ _ _ _ File No. 498
Type 40853 (For 5·V, 100·A & 3D·V, 20·A Power Supplies)
Package: JEDEC TO·3
Applications Information: See "RCA Power Circuits" manual SP·52
ELECTRICAL CHARACTERISTICS At Case Temperarure f7C1 ~ 2ff'C Unless Otherwise Specified
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
LIMITS
MIN.
MAX.
Collector-Cutoff Current:
With base reverse billsed
ICEV
ICEV
VCE = 450 V, VBE = ·1.5 V
VCE - 450 V, VBE - ·1.5 V, TC = 125°C
-
-
1.0
10
Collector-ta-Emitter Voltage
With base open
Collector-ta-Emitter Voltage
With external base-to-
emitter resistance (RSE)
Emitter-ta-Base Voltage
.VCEO·
VCER
VEBO
IC = 0.2 A, IB = 0
IC = 0.2 A, RBE = 50 n
IE - 5 mA, IC = 0
300 -
375 -
6
DC Forward-Current Transfer
Ratio
hFE
IC = 5 A, VCE = 4 V
10 -
Collector-ta-Emitter Saturation VCElsa')
Voltage
IC = 8 A, IB = 1.6 A
- 3.0
Base-ta-Emitter Saturation
Voltage
Second-Breakdown Collector
Current:
With base forward biased
.VB Elsa')
ISlb
IC = 8 A, IB = 1.6A
VCE = 50 V
,
- 2.0
2.2 -
Second-Breakdown Energy:
With base reversed biased
ES/ba
L = 50 IlH, ICIPEAK) = 5 A, R = 20 n
VBE =·4 V
0.62 -
a For characteristics curves and test cordltlons, refer to published data for prototype 2N5805 (FIle 407).
UNITS
mA
mA
V
V
V
V
V
A
mJ
Type 40854 (For 5·V, 200·A & 30·V, 40·A Power Supplies)
Package: JEDEC TO·3
AppliCations· Information: See "RCA Power Circuits" manual SP·52
ELECTRICAL CHARACTERISTICS At Case Temperarure (TC) ~ 2ff'C Unless Otherwise Specified
CHARACTERISTIC
Collector-Cutoff Current:
With base reverse biased
Collector-to-Emitter Voltage
With base open
SYMBOL
ICEV
ICEV
a
VCEO
TEST CONDITIONS
VCE = 450 V, VBE = ·1.5 V
VCE = 450 V, VBE = ·1.5 V, TC - 125°C
IC = 0.2 A, 18 = 0
LIMITS
MIN.
MAX.
- 1.0
- 10
300 -
Collector-to-Emitter Voltage
With external base-to-
emitter resistance (RBE)
Emitter-to-Base Voltage
DC Forward-Current Transfer
Ratio
a
VCER
VEBO
hFE
Ic = 0.2 A, RBE = 50 n
IE = 5 mA, IC = 0
IC = 10 A, VCE = 4V
325 -
6-
8-
Collector-to-Emitter Saturation
Voltage
VCElsat)
IC = 16 A, IB = 3.2 A
- 3.0
Base-to-Emitter Saturation
Voltage
VBElsa')
IC = 16A,IB = 3.2 A
- 3.0
Second-Breakdown Collector
Current:
With base forward biased
a
ISIb
VCE= 30V
5.8
Second-Breakdown Energy:
a L - 50 IlH, ICIPEAK) = 10 A, R = 50 n
With base reversed biased
ESIb
VBE = -4 V
2.5
a For characterrstlcslcurves and test condI.t.Ions, refer to publrshed data for prototype 2N6251 (FIle 5231.
-
-
UNITS
mA
mA
V
V
V
V
V
A
mJ
442