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File No. 548
D\l(]5LJ[J
Solid State
Division
RF Power Transistors
40894 40896
40895 40897
JEDEC TO·72
H-1299
High - Frequency
Silicon N-P-N Transistors
For TV·Tuner, FM and AM/FM "Front·End", and
IF Amp,lifier, Oscillator, and Converter Service
Features:
• High gain·bandwidth products:
fT = 1200 MHz typo for tuner types
= 800 MHz typo for if-amplifier types
• Very low collector·to·base feedback capacitance:
Ccb = 0.7 pF typo for 40894.40895
• Low noise figure:
3 dB typo at 200 MHz for rf amplifier type
RCA-40894; 40895. 40896. and 40897 are high-frequency
n-p-n silicon devices characterized especially for rf. mixer.
oscillator. and if stages of vhf. SSB. and FM receivers.
These devices utilize a hermetically sealed four-lead JEDEC
TO-72 package_ All active elements of the transistor are in-
sulated from the case. which may be grounded by means of
the fourth lead in applications requiring minimum feedback
capacitance. shielding of the device. or both.
• High power gain as neutralized amplifier:
GpE = 15 dB min. at 200 MHz (40894)
• High power output as uhf oscillator:
POE = 20 mW typ_ at 500 MHz (40896)
• Low noise figure:
NF = 4_5 dB max_ at 200 MHz (40894)
• Low collector-ta-base time constant:
rb'Cc = 14 ps max_
MAXIMUM RATINGS. Absolute-Maximum Values:
COLLECTOR-TO-EMITTER VOLTAGE ... ___ . ______ . ____ .... .
COLLECTOR-TO-BASE VOLTAGE .. _. ______ ..... _.. _.. _.... .
EMITTER-TO-BASE VOLTAGE. _... _.. ____ .. ___ ............ .
CONTINUOUS COLLECTOR CURRENT ...................... .
TRANSISTOR DiSSiPATION ............................... .
With heat sink. at case temperatures up to 25°C ............... .
With heat sink, at case temperatures above 25°C _.. _... ____ .. _. _
At ambient temperatures up to 25°C ....................... .
At ambient temperatures above 25°C .......... _............ .
TEMPERATURE RANGE:
Storage & Operating (Junction) ........................... .
CASE TEMPERATURE (During soldering):
At distances ~ 1/32 in. (0.8 mm) from seating
surface for 10 seconds max. . .......................... .
VCEO
VCBO
VEBO
Ie
PT
12
20
2.5
50
300
Derate linearly 1.71
200
Derate linearly 1.14
-65 to +200
265
V
V
V
rnA
mW
mwl"e
mW
mwl"e
°e
°c
12-71
443

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40894-40897
ELECTRICAL CHARACTERISTICS at Ambient Temperature (TAl 25°C unless otherwise specified
File No. 548
CHARACTERISTICS
SYMBOLS
TEST CONDITIONS
DC COLLECTOR OR
FREQUENCY
EMITTER VOLTAGE
MHz
V
VCS VCE VES
LIMITS
OCCURRENT
mA
TYPE 40894
RF AMPLIFIER
TYPE 4OS95
MIXER
UNITS
IE IC IS Min. TVp· Max. Min. Typ. Max.
Collector·Cutoff
Current
TA = 150'C
ICSO
Collector-to·Base
V(SR}CBO
Breakdown Voltage ....
Collector-ta-Emitter
Sustaining Voltage
VCEOlsus}
Emitter-ta-Base
V(SR}ESO
Breakdown Voltage
ColleCtor-ta-Emitter
Saturatio~ Voltage
Base-ta-Emitter
Saturation Voltage
VCEls.t}
VBElsat}
15 0
-- - 0.02 -
0.02
15 0
--
~A
I- - I
0 0.001
20 - - 20 - - V
- -3 0 15 -
15 -
V
0.Q1 0
-2.5
-- 2.5
-V
-10 I
-0.4
- 0.4 V
10 1 - -
1-
1V
Static Forward Current- hFE
Transfer Ratio
6 1 50 SO 250 40 70 250
Magnitude of Common-
Emitter. Small·Signal
Short·Circuit, For-
ward Current
Transfer Ratio8
ih,.1
Collector-ta-Base
Feedback Capaci·
tanceb
Ccb
Common-Base Input
CapacitanceC
Cib
100
1 kHz
6
6
0.1 to 1
10
5
2
0
0.1 to 1
0.5 0
9 14 20 9 14 20
25 90 300 25 90 300
- 0.7
1
0.7 1 pF
- - 2-
2 pF
Collector-ta-Base
Time Constanta
'b'Ce
Small·Signal Power Gain
in Neutralized Com-
mon-Eminer Ampli-
fier Circuit8 (see
Fig.6}
GpE
Noise FigureS
NF
31.9
6
10.7
200
200
12
12
6
2 3 7 14 3 7 14 ps
5 - - -- - -
5
15 21
- 15 21
- dS
- - -1.5 3 4.5 -
dS
aLead No... (case) grounded; As .. 1250
bn.,..·termin.1 mealu,ement of the collector·to-base capaCitance
wi'Ch the CUll and emitter leadl connected to the guard terminel.
clem No... 10ISel floating.
444

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File No. 548
ELECTRICAL CHARACTER ISTICS at Ambient Temperature ITA) 2SoC unless otherwise specified
40894-40897
CHARACTER ISTICS
SYMBOLS
TEST CONDITIONS
LIMITS
DC COLLECTOR OR
FREQUENCY
MHz
EMITIER VOLTAGE
V
DC CURRENT
rnA
TYPE 40896
OSCILLATOR
TYPE 40897
IF AMPLIFIER
UNITS
VC8 VCE VEB IE
IC IB Min. Typ. Max. Min. Typ. Max.
Collector-Cutoff
Current
TA = 150'C
ICBO
15 0
15 0
-. . 0.02 .
0.02
--
1- -
~A
1
Collector-ta-Base
V(BRICBO
Breakdown Voltage-
0 0.001
-20 - 20 -
-V
Collector-ta-Emitter
Sustaining Voltage
VCEO(susl
3 0 15 - - 15 - - V
Emitter-to-Base
V(8RIEBO
Breakdown Voltage
0.01 0
2.5 -
- 2.5 -
-V
C9lleetor-to-Emitter
Saturati0!1 Voltage
Vce(s.!1
-10 1
- 0.4 -
- 0.4 V
Base-ta-Emitter
Saturation Voltage
V8E(S.!1
-10 I
-
1-
IV
Static Forward Current- hFE
Transfer Ratio
6 1 27 50 250 70 120 250
Magnitude of Common-
Emitter, Small-Signal
Short-Circuit. For-
ward Current
Transfer RatioS
Ihie I
Collector-ta-Base
Feedback Capaci·
tanceb
Ccb
Common-Base Input
CapacitanceC
Cib
100
1 kHz
6
6
0.1 to 1
10
5
2
0
0.1 to 1
0.5 0
9 14 20 9 14 20
25 90 300 25 90 300
- 0.7
-1 0.7
1 pF
-
-
2-
-
2 pF
Collector-ta-Base
Time Constanta
fb'Ce
31.9
6
2 3 7 14 3 7 14 ps
Small·Signal Power Gain
in Neutralized Com-
mon-Emitter Ampli·
fier Circuita (see
Fig. 61
GpE
Noise Figure3
NF
10.7
200
200
12
12
6
5
5
--
15 21
- 18 25·
-- -
-
-
dB
1.5 - - - - - - dB
'LeMt No. 41c:ase1 grounded; Rg c 125n
~hre•.terminel measyrement of the collector·to-base capacitance
with the case ,nd emitter leads connected to the guard terminal.
CLe.t.No. 4lcase) floating.
445

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40894-40897
COMMON-EMITTER CtRCUIT,BASE INPUT;
OUTPUT SHORT-CIRCUITED
FREQUENCY (I) -[OOMHz
AMBIENT TEMPERATURE {TA}- 25·C
COLLECTOR-lO-EMITTER VOLTAGE (VCE) =6V
File No. 548
o 10 20 25 30 35
COLLECTOR CURRENT (le)- mA
92CS- 14169RI
Fig. I-Small·signal beta characteristic for all types
TWO-PORT ADMITTANCE (v} PARAMETERS AS FUNCTIONS OF
FREQUENCY (f) FOR ALL TYPES
CO~~~ufM~TH1>~~:b~~~~Tt~g.SE INPUT;
COLlECTOR-TO-EMITTER VOLTAGE (VCE1= 4V
~~~~i~~°.fE~~E:{ut~l?(+:t!A25°C
I
I
I
~i-----jl-+-H-++t-t+--+, -----rI
r"t-20 -- " t-
r
r---
10 6 8 100
FREOUENCY {fl - MHz
Fig. 2-lnput admittance (Yi.,)
92CS-14131R\
22 CO~~8~Em~Tc1WE~~CUIT; INPUT
2o Ci~OiL~Li~E~COT;OE~R~-~lORR-EEM:iIJT~T1E?Ri+V:O)L~TAA2G5E0C(VCE)" 4V
io '1o81--__+-+-++++I+++-I_"_--_-+_I--H+t+H
E114 i----t--+--t---H:--H-t! I----j-+-+-t-+-1--I--H
~
E
1I
JI21---1-+---+--t+t+tt----+-+---t--H-,-H-! '"
~,OI----1--+-+H-+-m-----+--+--+-++-I--H-I ~
~ 8- - ,.++t++++----+-----t--f---++++-H2 ~
~ 6- - .- - ---+_+++++--_+-+---I/___++++-Hl5 ~
~4------1r--+-+-++t+tr----"+-b-o-.r~~~-I-t+HI ~
§ 21----1r-_+___+-++t+tr-_-='-q~·;;.·...-Tl"Tl.,O.50
o -I 1
,. , e
100 1000
FREQUENCY {f)-MHz
92CS-14730RI
Fig. 3-0utput admittance (Yo.,)
Fig. 4-Forward transadmittance (Yf.,)
92CS-14728RI
•e
10 100
FREQUENCY (fl- MHz
Fig. 5-Reverse transadmittance (Yrei
446
..
1000

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File No. 548
40894-40897
DC COMMON
TYPE TYPE
IN3195 IN3195
~~~M 0.02
SOURCE Jl.F
.,n
L,
r
C, C2
3-35 2-10 'OK
'2r
-VEE
STOon
2·10 LOAD
C7
2-10
C6
[_
NOTE: (Neutralization Procedurel: (a) Connect a 50-0 rf volt-
meter to the output of a 200-MHz signal generator (Ag = 5001, and
adjust the generator output to 5 mV. (b) Connect the generator to
the input and the rf voltmeter to the output of the amplifier, as
shown above, Ie) Apply VEE and Vee. and adjust the generator
output to provido on amplifier output of 5 mV. (dl Tune C2, CG,
and C7 for maximum amplifier output, readjusting the generator
output as required to maintain an output of 5 mV from the ampli-
fier. (e) Interchango the connections to the signal generator and the
rf voltmeter. If) With sufficient signal applied to the output terminals
of the amplifier. adjust eN for a minimum indication at the amplifier
input. (g) Repeat steps (al. (b), (cl.and (dl to determine if retuning
is necessary.
Q = Type 40894. 40895. 40896. or 40897
L1: 1·3/4 turns No.la wire 0.5 in. (12.7 mmllong, 0.5 in. (12.7
,,"AFC mm) ID
L2: 2 turns No. 16 wire, 0.5 in. (12.7 mmllong, 0.5 in. (12.7 mm)
ID
L3: 2 turns No. 18 wire,O.25 in. (6.35 mm) long, 0.5 in. 112.7 mm)
ID. Position approximately 1/4 in. (6.35 mm) from L 2.
+ vee 92CS 1475JRI All capacitances in pF unless otherwise specified.
Fig. 6-Neutralized amplifier circuit used to measure power gain and noise figure at 200 MHz for all types
TERMINAL CONNECTIONS
Lead 1 - Emitter
Lead 2 - Base
Lead 3 - Collector
Lead 4 - Connected to case
447