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OOOBLJl]
Solid State
Division
File No. 574
RF Transistors
40915
O.2-to-1.4-GHz Low-Noise
Silicon N-P-N Transistor
For High-Gain Small-Signal Applications
JEDEC TD-72
H-1299
Features:
• Low noise figure:
NF = 2.S dB (max.) with 11 dB gain at 450 MHz
= 3_0 dB (typ.) at 890 MHz
= 4_S dB (typ.) at 1.3 GHz
• High gain (tuned, unneutralized):
GpE = 14 dB (min.) at 4S0 MHz
• High gain-bandwidth product
• Large dynamic range
• Low distortion
= 6_S dB (typ.) at 1.3 GHz
RCA-40915' is an epitaxial silicon n-p-n planar transistor in-
tended for low-power, small-signal applications where both
low noise and high gain are desirable. It utilizes a hermetically
sealed four-lead JEDEC TO-72 packago_ All of the elements
of the transistor are insulated from the case, which may be
grounded by means of the fourth lead_
*Formerly RCA Dev. No. TA8104.
MAXIMUM RATINGS,Absolute-Maximum Values:
Collector-to-Base Voltage ___ ..... .
Collector-to-Emitter Voltage ...... .
Emitter-to-Base Voltage .......... .
Collector Current (Continuous) .... .
Transistor Dissipation:
At ambient temperatures up
to 25°C ............... .
At ambient temperatures above
25°C ................ .
Temperature Range:
Storage and Operating
(Junction) .... _........ .
VCBO
VCEO
VEBO
IC
PT
35
15
3.5
40
V
V
V
mA
200 mW
Derate linearly
at 1.14 mW;oC
-65 to +200 °c
448
92CS-20062
Fig. 1-Typical noise figure vs. frequency.
'~",
0-
COLLECTOR-IO-EMITTER VOLTAGE IVCE)=IOV
AMBIENT TEMPERATURE ITA): 2SoC
NOTE; fT CALCULATED FROM MEASURED
VALUES OF 5 PARAMETERS
10 15
COLLECTOR CURRENT lIel - mA
Fig.2-Gain-bandwidth product vs. col/ector
current.
20
92CS-1973!S
11-73

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File No. 574
40915
ELECTRICAL CHARACTERISTICS at Ambient Temperature (TAl 2SoC
CHARACTERISTIC
STATIC
SYMBOL
TEST CONDITIONS
DC
COLLECTOR
VOLTAGE
(VI
IVCB VCE
DC
CURRENT
(mA)
I IIE IB IC
Collector Cutoff Current
ICBO
10
0
Collector·to·Base
Breakdown Voltage
V(BR)CBO
0 0.01
Collector·to·Emitter
Breakdown Voltage
V(BR)CEO
0 0.1
Emitter·to·Base
Breakdown Voltage
V(BR)EBO
0.01 0
DC Forward·Current
hFE
10
3
Transfer Ratio
Thermal Resistance:
(Junction·to·Ambient)
DYNAMIC
Device Noise Figure (f = 450 MHz)
ROJA
NF
10
1.5
Small,Signal Common· Emitter
GpE
10
1.5
Power Gain (f = 450 MHz)
Unneutralized Amplifier
At minimum noise figure
GpE
10
1.5
Collector·to·Base Output
Capacitance (f = 1 MHz)
Cobo
10
0
LIMITS
UNITS
IMIN. MAX.
- 20
35 -
nA
V
15 - V
3.5 - V
20 -
- 880
-
°C/W
- 2.5
14 -
dB
dB
11.0 -
- 1.0
dB
pF
'"~
I
N 15
N
~
Z
~
~
~ 10
z
0
~
z
FREOUff.JCYUh/GI1Z
COLLECTOR-lO-EMITTER VOLTAGE IVCE~·IOV
t±±
FFfAMBIENT TEMPERATURE ITA}·2S·C,ZG"ZL"SO.n
8 10 12 14 16
COLLECTOR CURRENT Uel-rnA
18
Fig.3- Typical insertion power gain vs. collector current.
5 FREQUENCY 10- 450MHz
AMBIENT TEMPERATURE (TA1J:Z5°C
4
'~",
" :;:~... 3
3V
~ 6V
~ 2 COLLECTOR -TO-EMITTER
gill VOLTAGE \VeEI·IOV
....-/ ~'~
I
. 0.> I.' 2
8 10
COLLECTOR CURRENT Ire I-rnA
92CS-19737
Fig.4- Typical noise figure vs. collector current.
449

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40915 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 574
COLLECTOR CURRENT tIcI·mA
Fig.5- typical power gain (at minimum noise
figure) vs. collector current.
-90 0
92CS-19141
Fig.8- Typical input reflectIon coefficient.
~
0
~~
~i'T20
j~
d!"'
~~Tl0
"~'~~
o~
~~
!OS 0
~~
0"
-~
FREQUENCY {fl:450 MHz
AMBIENT TEMPERATURE (TAI=25°C
,.\0"_
,0-t.~~~"Q\-\~~~k.?"'
~
24
COLLECTOR CURRENTlIcl-mA
10
Fig.6- Typical output power level (with 1 dB of
gain compression) vs. collector current.
COLLECTOR·rO-EMITTER VOLTAGE (YeEI-IOV
TERMINATIONS: son
AMBIENT TEMPERATURE CTAI-2SoC
20
~SZII-d81FORWARD TRANSFER COEFFICIENT
-10 -20 -30 -40
REVERSE TRANSFER COEFFICIENT (512)- dB
t2CS-It740
Fig.7- Typical forward and reverse transfer coefficients.
In General Radio type 1607-P44 transistor mount,
or equivalent.
.... Vaa adjusted for Ie '" 1.5 mAo
Fig.9-Block diagram of test setup for measurement
. of power gain and noise figure.
450

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File No. 574 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 40915
Fig. 10- Typical output reflection coefficient.
Cl: 1.0- 30 pF
C2.C3: 1.0-20 pF
C4.C5: O.04 Il F
C6: 1-10 pF
L,: 2 turns NO.18 wire, 3/16 in. (D.18B mm)
ID, 0.10 in. 12.54 mmllong
L2: 3 turns No., 18 wire, 3/16 in. (0.188 mml
ID.0.15 in. (3.Bl mmllong
L3.L,j: 0.22-IlH rf choke
LS: 3 turns No. 18 wire, 3/16 in. (O.18S mm)
ID, 0.15 in. (3.Bl mm) long
* VBB adjusted for Ie = 1.5 rnA
Fig. II-Circuit diagram of 450·MHz amplifier
(unneutralized) used for measurement
of power gain and noise figure.
TERMINAL CONNECTIONS
Lead 1 - Emitter
Lead 2 - Base
Lead 3 - Collector
Lead 4 - Case
451