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File No. 215 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
OO(]5LlD
Power Transistors
Solid State
Division
40366-40369
40385
4:iip,.&I ~
JEOECTO~-lr 40369
H-,S70
~.-"
W4O:~O15
JEDEC TO-8
frf
403665
403675
403855
/1\
40366L
40367L
40385L
H·1380
High- Reliability Silicon
N-P-N Power Transistors
For Power Switching and Amplifier Applications
Features
• High reliability assured by five preconditioning steps
• Group A test data included*
• Transistors utilize JEDEC hermetic
packages;
40369-TO·3
40368-TO·8
40366, 40367 t
.
40385 \ See Note at right
These devices are available with either 1%-
inch leads (TO-S package) or %,·inch leads
ITO-39 package). The longer-lead versions are
specified by suffix "L" after the type num-
ber; the shorter-lead versions are specified by
suffix "s" after the type number.
RCA·40366-40369 and 40385 are silicon n·p·n power
transistors derived from JEDEC types 2N2102, 2N1482,
2N1486, 2N1490, and 2N3439. They are specially pre·
conditioned for use in power·switching and amplifier appli·
cations in those instances where high reliability is a requisite.
a High voltage ratings:
VCER = 80 V max. (40366)
VCEV = 100 V max. (40367,40368 & 40369)
VCEO = 350 V max. (40385)
• High power·dissipation capability:
PT = 5 W max. (40366,40367 & 40385)
= 25 W max. (40368)
= 75 W max. (40369)
* Group A test data shown on pages 2 & 3.
MAXIMUM RATINGS, Absolute·Maximum Values:
COLLECTOR·TO·BASE VOLTAGE ....... VCBO
COLLECTOR·TO·EMITTER VOLTAGE:
With external base·to·emitter resistance
(RBE) $.10n ................... VCER
With -1.5 V (VBE) of reverse bia~ ....... VCEV
With base open ...................... VCEO
EMITTER·TO·BASE VOLTAGE ........... VEBO
CONTINUOUS COLLECTOR CURRENT .... IC
CONTINUOUS BASE CURRENT ..••...... IB
TRANSISTOR DISSIPATION:
PT
At case temperature up to 25°C .........
At free·air temperature up to 25°C .•...•.
At temperatures above 25°C ............
TEMPERATURE RANGE:
Storage & Operating (Junction) ..•.......
PIN or LEAD TEMPERATURE (During
soldering) :
At distances? 1/32 in. (0.79 mm)
from seating plane for lOs max.....
40366
120
40367
100
40368
100
40369
100
40385
450
80
100 100 100
65 55
55 55 350
7 12 12 10 7
1.5 3
6
1 1.5 3
5 5 25 75 10
-+-- Derate linearly to 0 wat~ at 200°C -
. -65 to 200
255 255 235 235 255
V
V
V
V
V
A
A
W
W
°c
°c
9·73 411

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40366-40369 and 40385
File No. 215
ELECTRICAL CHARACTERISTICS, At Case Temperature (TCI = 25°C
Characteristic
Collector·Cutor! Currl'nl
Symbol
leBO
ICr,:O
TEST CONDITIONS
Voltage
Current
V de
rnA de
Vea VeE VEO Ie I a
30
60
LIMITS
40366
40367
40368
Min, Ma•• Min, Max. Min_ Ma••
4.0 9.0
2.0
40369
40385
Min. MOJII, Min. Mo••
10
Unit.
~A
nA
300 20 ~A
ICEV
450 1.5
500 ~A
Emitter-CutoU Current
lEBO
DC Forward-Current
Transfer Ratio
hFE
Collector-ta-Base
Breakdown Voltage
Collector-ta-Emitter
Breakdown Voltage
Emitter-la-Base
Breakdown Voltage
(IE =0.1 rnA).
Collector-to-Emi tter
Sustaining Voltage:
With external
base-to--emitter
resistance
(RBE) • 10 il
Wi th base open
BVeB,
BV CEV
BVEBO
VCER(sus)
VC~O(sus)
0
0
10
12
200
750
1500
10 0.01
10 0.1
10
10 20
10 150"
10 500"
10 1000·
1.5 0.1
1.5 0.25
5.0
2.0 5.0
20
6.0
35 100
35 100
25 75
10
20
~O
40 160
40 120
25
10
120
100 100
100
7.0
100·
80
50 55
350
100·
65
100 55 55
Collector-la-Emitter
Saturation Voltage
VCE(sat)
50
150· 15
0.5
0.5
200 10
1.4
750 40
0,75
1300 100
1.0
Base-to-Emitter
Saturation Voltage
VBE(sal)
150· 15
50
1.1
1.3
Base-to-Emitter Voltage VBE
200
750
1500
3.0
2.5
2.5
= =• Pulsed; pulse dumtion 30011 s, duty factor 1.8%.
nA
~A
~A
~A
V
V
V
.V
V
V
V
V
412

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File No. 215
40366-40369 and 40385
GROUP· A TESTS (IN ACCORDANCE WITH MI L· 5·19500)
TEST METHOD
PER
MI~·STD·750
EXAMINATION
OR
TEST
2071
30360
Subgroup 1
Visual and
Mechanical
Examination
Subgroup 2
ICBO
CONDITIONS
VC8 = 30V,IE 10
VC8 = 60V, IE =
~IMITS
~TPD' 4036~
40367
40368 40369
40385 UNITS
Min. Max. Min. Max. Min. MalIC, Min. Max. Min, Max.
10
.!!
4.0 9.0
10
2.0
~A
nA
;W41A
30410
30610
300lA
30260
301lA
30110
30118
3071
'CEV
'CEO
'EBO
BVCBV
BVEBO
BVCEV
VCEO(SUS)
VCER(SUS)
Subvroup 3
VCE(sal)
vCE = 450V ,
V8E o-1.5V
VCE: 300V,
IE = 0
VE8 ' .V, IC =
VE8 =6V,lc' 0
VEB .. 10V, IC • 0
VE8 • 12V, IC •
IC' 100"A,
VE8 • 1.5V
IE' 100"A, IC •
IC' O.25mA,
VEB .... 1.5V
Ie = 0.5 rnA,
VE8 = 1.5V
IC • SOmA. Ie :a
IC' IOOmA-, 18 = 0
IC = 100mA, 18 ' 0
IC' IOOmA·,
R8E = 10 (]
IC • SOmA,
(a = 4mA
IC' 150mAo,
18 • ISmA
Ie = 200mA,
18 • lOrnA
Ie '" 750mA,-
18 = 40mA
IC = I.SA,
18 = IOOmA
500 ~A
5.0
- 6.0
2.0 5.0
120
20 ~A
nA
20 ~A
~A
~A
V
-7.Q
-100 100
V
V
100 V
-55 350
65
55 55
V
V
V
80 V
- 0.5 V
0.5
1.4
- 0.75
1.0
V
V
V
V
3066A
3066A
VBE(sat)
VBE
IC = SOmA,
la = 4mA
IC = 150mA·,
18 = 15mA
IC = 200mA. VeE = 'V
IC = 750mA, VeE ". 4V
1.1
3.0
2.5
1.3 V
V
V
V
413

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40366-40369 and 40385 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 215
GROUP· A TESTS (CONT.)
TUT METHOD
PER
MIL.STO.750
EXAMINA TION
OR
TEST
CONDITIONS
Ie = 0.01 rnA,
VeE' 10V
Ie" 0.1 rnA,
VeE' 10V
Ir. = 2 rnA.
VeE' 10V
Ie = 20mA,
=VeE tOV
3076
Ie .. 150mA·,
VeE' 10V
Ie • 200mA,
VeE' 4V
Ie :10 500mA·,
VeE' 10V
Ie • 750mA,
VeE' 4V
Ie E 1 A·,
VeE' 10V
Ie' 1.5A,
VeE' 4V
.Pulsed; pulse duration ,= 300JJ.s, duty ractor '" 1.8~.
LTPD' 40366
40367
LIMITS
40368 40369
I40385 UNITS
Min. Mox. Min. Mox. Min. Max. Min. Max. Min. Max,
10
20
-40 120
35 100
30
40 60
25
35 100
10
25 75
'Lot toll'rnnC'e per cf'nl d('frclivl',
The RCA-40366, 40367, 40368, 40369, and 40385 are
high·reliability versions of the RCA·2N2102, 2N1482,
2N1486, 2N1490 and 2N3439*, respectively. These tran·
sistors are intended for medium- and high·power switching
and amplifier applications in military and industrial
equipment.
The 40366 and 40385 are silicon n·p-n types with a power·
dissipation capability of 5 watts each. The 40367 is a silicon
n-p·n hometaxial type with a power-dissipation capability of
5 watts. These devices are available with either 1-1,~·inch
leads (TO·5 package) or Y,·inch leads (TO-39 package).
The 40368 is a silicon n-p-n hometaxial type in a JEDEC
TO-8 package with a power-dissipation capability of 25
watts.
The .40369 is a silicon n-p-n hometaxial type in the popular
JEDEC.TO-3 package and has a dissipation capability of 75
watts.
The 40366, the high-reliability version of the 2N2102,
features linear beta characteristics which are controlled over
. a wide range of collector currents (0.01 mA to 1 A).
The 40367, 40368; 'and ·40369, the high-reliability versions
of the 2N1482, 2N1486, and 2N1490, respectively, feature
rugged construction, low saturation voltage, and high beta at
high currents, and are designed to assure freedom from
forward·bias second breakdown when operated with speci-
fied limits.
Typical applications for these transistors include: power-
switching circuits such as dc-to-dc converters, inverters,
choppers, solenoid- and relay-controls; oscillator, regulator,
and pulse-amplifier circuits; Class A and Class B push-pull
audio- and servo-amplifiers.
* Complete data for types 2Nl482. 2Nl486, 2N1490, 2N2102 and
2N3439 are giverfin separate technical bulletins (Files 135. 137. 139,
106, and 64, respectively). Bulletins are available upon request from
RCA Solid State Division. Box 3200. Somerville. N.J. 08876.
414

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File No. 215 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 40366-40369 and 40385
RELIABILITY TESTING
Each RCA-403GB. 40367. 40368. 40369 and 40385 is subjected to the following preconditioning steps:
1. Temperature Cycling-Method 102A of MIL-STD-202. 5 cycles, _650 C to 2000 C
2. Bake, 72 hours min., 200 0 C
3. Helium Leak, 1 x 10-8 eels max.
4. (a) Methanol Bomb. 70 psig, 16 hours min. (For 40366)
(b) Bubble Test (Per MIL-STD-202, CONDo A), 125 0 C min.,
1 minute, ethylene 'glycol (For 40367, 40368, 40369 & 40385)
5. Serialization
6. (a) Record ICBO and hFE 1150 rnA) (For 40366)
(b) Record ICBO Wld hFE (For 40367, 40368, & 40369)
(c) Record ICEV and hFE (20 rnA) IFor 40385)
= =7. (a) Power Age, TFA 25 0 C, VCB 60 V, t= 168 hours,
P T = 1 W, free·air (For 40366 & 40367)
(b) Power Ago', TC = 1250 C, VCB = 24 V, t= 168 hours,
PT = 10.5 W, with heat-sink (For 40368)
PT = 32 W, with heat-sink (For 40369)
(c) Power Age, TFA=25 0 C, VCB =200 V, t= 168 hours.
PT = 800 mW. free Ilir (For 40385)
8. (a) For 40366. t record ICBO' hFEIl50 rnA), BVCBV' VCEO(sus), BVEBO '
VCE(sat). Data furnished with transistor.
(b) For 40367, 40368, & 40369, t record ICBO' hFE • BVCEV' VcEd sus ), lEBO'
VCE(saO. Data furnished with transistors.
(c) For 40385, trecord iCEO' lEBO' VCEO(sus), ICEV' VCE(sat), Wld hFE(20 rnA).
Data furnished with transistor.
t Delta criteria after 168 hours Power Age:
±llhFE 257. (For all types)
iliCBO + 11.J.A (For 40367, 40368. & 40369)
TERMINAL CONNECTIONS
FO R 40366,40367,
AND 40385
Pin 1 - Emitter
Pin 2 - Base
Case, Pin 3 - Collector
TERMINAL CONNECTlDNS
FOR 40368
Lead 1 - Emitter
Lead 2 - Base
Case, Lead 3 - Collector
TERMINAL CDNNECTIONS
FOR 40369
Pin 1 - Base
Pin 2 - Emitter
Case - Collector
Mounting Flange - Collector
415