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_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 302
DDJ]3LJD
Solid State
Division
Power Transistors
40537
40538
3J
40537L
40538L
JEDEC TOoS
H·13BO
40537S
40538S
JEDEC TO-39
H·t381
Silicon P-N-P Transistors
For Driver and Output Stages in
Audio-Amplifier Circuits
Features:
• Planar construction provides low-noise and low·leakage
characteristics
• Gain bandwidth product (fT) = 50 MHz min.
• 40538 is p·n·p complement of 40539' rTh-_-d-'-Yic-"-,-,,-,,,-j-'.-b-',-w-i-Ih-'-i-lh-er-.-,%-...,
• Low saturation voltage:
VCE(sat) = -1.1 V max. (40537)
= -2.0 V max. (40538)
• High pulse beta at high collector current:
hFE = 50 min. at IC = -50 mA (40537)
inch I.ads CTO'& package) or )S:·inch Iuds
(TO-39 package). Thelonllr-lud versions are
specified bV suffix "L" aftar the type num-
ber: the shorta,-Iead versions are specified by
suffix "'S" aftar the type number.
= 15 min. at IC = -500 mA (40538)
RCA·40537 and 40538 are double·diffused. epitaxial·planar.
silicon p·n·p transistors. They differ in the current at which
the parameters are controlled.
The 40537 is designed specifically for use as a driver in audio·
amplifier circuits. The 40538 is intended as a complement to
n-p·n type 40539 in complementary·symmetry output stages'.
* Data for type 40539 appear in File No. 303.
MAXIMUM RATINGS,AbsolulrI-Maximum Values:
COLLECTOR·TO·EMITTER SUSTAINING VOLTAGE:
With external base·to·emitter resistance (RBE) = 500 n ............... .
EMITTER-TO·BASE VOLTAGE ................................... .
COLLECTOR CURRENT ...................................... ..
BASE CURRENT .............................................. .
TRANSISTOR DISSIPATION:
At case temperatures up to 25° C ............................... .
At free·air temperatures ·up to 25° C ............................ .
At temperatures above 25° C .................................. .
TEMPERATURE RANGE:
Storage and Operating (Junction) ............................... .
LEAD TEMPERATURE (During soldering):
At distance;;' 1/32 in. (O.B mm) from seating plane for 10 s max........ .
40537
40538
VCER(sus)
VEBO
IC
IS
PT
-55
-5
-0.7
-0.2
5
Derate linearly to 0 W at 200° C
V
V
A
A
W
W
-65 to 200
°c
230 °c
422 9·73

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File No. 302 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 40537.40538
ELECTRICAL CHARACTE RISTICS. A t Case Temperature (TC) =250 C
CHARACTERISTIC
SYMBOL
Collector Cutoff Current
With external base·to·emitter
resistance (RBE) =500 n
Emitter Cutoff Current
ICER
lEBO
DC Forward·Current Transfer Ratio hFE
Collector-to· Emitter
Sustaining Voltage
With external base-to-emitter
resistance (RBE) =500 n
VCER(sus)
Base-to-Emitter Voltage
VBE
Collector-to-Emitter
Saturation Voltage
Gain-Bandwidth Product
Thermal Resistance
(Junction·to-Free Air)
VCE(sat)
fT
ROJA
apulsed; pulse duration'" 300 ~s. duty factor < 2%.
TEST CONDITIONS
DC VOLTAGE OCCURRENT
(V) (rnA)
VCE VEB IC
IB
LIMITS
TYPE
40537
TYPE
40538
UNITS
MIN. MAX. MIN. MAX.
--45
- -10
-10 p.A
-5 a
-4 -50
-4 -500a
- -1
50 300
--
- -1 mA
--
15 90
--100
-55 - -55
V
-4 -50
-4 -500
- -1.B
--
-
-
-
-2.7
V
-50
-500
-5
-50
- -1_1
--
-
-
-
-2_D
V
-4 -50 100 (Typ.) 100 (Typ.) MHz
- 175
- 175 °C/W
COLLECTOR-TO-EMITTER VOLTAGE (VeE)" -IOV
.=""-' 120
-\~o:;'
~,
.;0::
roo ,.
\
eo~
>-
..>-
.ffi
p..1'\l~'C. (TA )- 25-C
1 - - ~, ,~~
601-.~
~
~ f'
I 40
0
.;
.. 20
~
g
0
-.~
...
1\1
~.\
.1\..
-0.1
-1.0
-10
-100
-1.000
COLLECTOR CURRENT (leI-rnA
92LS-I292
Fig. 1 - Typical de beta characteristics for both types.
BASE-TO-EMITTER VOLTAGE (VSEI-V
92LS-1295.e.'i:
Fig.2 - Typical transfer characteristics for both types.
423

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40537,40538 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 302
f:I~: ••..•••..•..••.. ;L
.. ...
I •••••••• ,.
...
-4 -8 -12
16 -20
COLLECTOR-TO-EMITTER VOLTAGE (VeE 1- v
921.S-129IRI
Fig.3 - Typical output characteristics for both types.
·····t!1/.... ••••••• Uti
-0.4 -0.8 -1.2
-I.'
-2.
COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V
92L.S-1287RI
Fig.4 - Typical output characteristics for both types.
TERMINAL CONNECTIONS
Lead 1 - Emitter
Lead 2 - Base
Case, Lead 3 - Collector
424