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File No. 303 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _..:.-
DDLC3LJ1J
Solid State
Division
Power· Transistors
40539
40544
40544L
H1375
40539L
H13BO
Medium.-Power Silicon
N-P-N Planar Transistors
For Driver and Output Stages in
Audio-Amplifier Circuits
Features:
• Low leakage current
D Low saturation voltage:
VCE(sat) = 1.0 V Max. (40544)
= 2.0 V Max. (40539)
a 40539 is n·p·n complement
of 40538*
These devices are available with either 1%-
inch leads (TO-5 package) or !Ii-inch leads
ITO-39 package). The longer-lead versions are
specified by suffix "L" after the type num·
ber; the shorter-lead versions are specified by
suffix. "S" after the type number.
RCA-40539 and 40544 are silicon n-p-n planar transistors.
Type 40539 employs the JEDEC TO-39 (40539S) or TO-5
(40539L) package; type 40544 is supplied with a factory-
attached, diamond-shaped mounting flange.
The 40539 is intended as a complement to p-n-p type
40538 in complementary-symmetry output stages. The
40544 was designed specifically as a driver in audio-amp-
lifier circuits.
* Data for type 40538 appears in File No, 302.
MAXIMUM RATINGS, Absolute-Maximum Values:
COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE:
With external base-ta-emitter resistance
n(RBE) = 100 ............................. VCER(sus)
(RBE) = 500 n ....... _........... _.......... VCER(SUS)
EMITTER-TO-BASE VOLTAGE .................... VEBO
COLLECTOR CURRENT ... _............... _... .. IC
TRANSISTOR DISSIPATION:
At case temperatures up to 25° C ................. .
At free-air temperatures up to 25° C ............... .
At temperatures above 25° C .................... .
PT
TEMPERATURE RANGE:
Storage and operating (Junction) ................. .
LEAD TEMPERATURE (During soldering):
At distance;;' 1/32 in_ (0.8 mm) from
seating plane for lOs max.
40539
40544
50
55
55
0_7 0.7
57
Derate linearly to 0 W at 2000 C
_-65to+20o_
_255_
V
V
V
A
W
W
°c
°c
9-73 425

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40539,40544 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ File No. 303 .
ELECTRICAL CHARACTERISTICS, at Case Temperature (Tci = 2!PC
Characteristic
Collector-Cutoff Current
With external base-to-emitter
resistance (RBE) = 100 fl
= 500 D
Emitter-Cutoff Current
Symbol
TEST CONDITIONS
DC Voltage DC Current
(V) (rnA)
VCE VEB IC
IB
LIMITS
Type
40539
Type
40544
Units
Min. Max. Min. Max.
ICER
40
45
lEBO
5
0
-
_.
-
!LA
10
- 10 - -
- -1.0 1.0 rnA
DC Forward-Current Transfer Ratio hFE
Coil ector- to - Emitter Sustaining
Voltage
With external base-to-emitter
resistance (RBE) =100 fl
=500fl
VCER(sus)
Baso-to-Emitter Voltage
VBE
4
4
Collector-to-Emitter
Saturation Voltage
Gain-Bandwidth Product
VCE(sat)
fT 4
Thermal Resistance
(Junction-to-Case)
6J -C
4 500
4 50
100
100
500
50
;;00
150
50
15 90 - -
- - 35 200
V
.- - 50 -
55 -
-
-- 2.7 - -
- - - 1.7 V
50 -
15 -
2.0 _.
--
-
1.0
V
100 (Typ.) 100 (Typ.) MHz
-- 35
25 °C/W
COLLECTOR-TO-EMITTER VOLTAGE (VCE) =10 V
200 fREE-AIR TEMPERATURE ITFA)" 25- C
l-
t .15
~ .50
a:
~
r!!
.20
~
.....-~ 1\
l-
i5 , /
~ 75
~\
I ,/
",,/
g
0.1
4 • .0
4 ••.0'
..
•0'
COLLECTOR CURRENT (IC)- mA
92.S5-3678
Fig. 1 - Typical dc-beta characteristics for both types.
426
vBASE-TO-EMITTER VOLTAGEIVBE) -
92CS-IU29RI
Fig.2 - Typical input characteristics for both types.

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File No. 303._ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _".40539, 40544
I
COLLECTOR-TO-EMITTER VOLTAGE (VCE}-V
92CS-12327RI
Fig.3 - Typical output characteristics for all types.
0.2 0,4 a.• a.• 1.0
BASE-TO-EMITTER VOLTAGE (VSE)-V
92CS-1232SRI
FigA - Typical transfer characteristics for all types.
TERMINAL CONNECTIONS
FOR 40539
Lead 1 - Emitter
Lead 2 - Base
Case, Lead 3 - Collector
TERMINAL CONNECTIONS
FOR 40544
Lead 1 - Emitter
Lead 2 - Base
Flange, Lead 3 - Collector
427