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MSS30-xxx-x Series
Low Barrier Silicon Schottky Diodes
Features
VF, RD and CJ Matching Options
Chip, Beam Lead and Packaged Devices
Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MSS30-xxx-x Series of Schottky diodes are
fabricated on N-Type epitaxial substrates using
proprietary processes that yield the highest FCOs in
the industry. Optimum mixer performance is
obtained with LO power of -3 dBm to +3 dBm per
diode.
Rev. V1
Chip
Electrical Specifications: TA = 25°C
Model
Configuration
MSS30-046-C15 Single Junction
VF
Typ.
V
0.29
MSS30-050-C15 Single Junction 0.27
Test Conditions
IF = 1 mA
VBR
Min.
V
2
CJ
Typ. / Max.
pF
0.10 / 0.12
2 0.15 / 0.18
IR = 10 µA
VR = 0 V
F = 1 MHz
RS
Typ.
Ω
10
6
RD
Max.
Ω
18
15
I = 5 mA
FCO
Typ.
GHz
160
175
Outline
C15
C15
Beam Lead
Electrical Specifications: TA = 25°C
Model
Configuration
MSS30-142-B10B Single Junction
VF
Typ.
V
0.29
VBR
Min.
V
2
CJ
Typ. / Max.
pF
0.07 / 0.10
MSS30-148-B10B Single Junction 0.27
2 0.12 / 0.15
MSS30-154-B10B Single Junction 0.25
2 0.22 / 0.25
MSS30-242-B20 Series Tee
0.29
2 0.07 / 0.10
MSS30-248-B20 Series Tee
0.27
2 0.12 / 0.15
MSS30-254-B20 Series Tee
0.25
2 0.22 / 0.25
MSS30-442-B41 Ring Quad
0.29
2 0.07 / 0.10
MSS30-448-B41 Ring Quad
0.27
2 0.12 / 0.15
MSS30-454-B40
Test Conditions
Ring Quad
0.25
IF = 1 mA
2 0.22 / 0.25
IR = 10 µA
VR = 0 V
F = 1 MHz
RS
Typ.
Ω
13
7
3
13
7
3
13
7
3
RD
Max.
Ω
22
15
12
22
15
12
22
15
12
I = 5 mA
FCO
Typ.
GHz
175
190
240
175
190
240
175
190
240
Outline
B10B
B10B
B10B
B20
B20
B20
B41
B41
B40
1 (Continued next page)
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For further information and support please visit:
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MSS30-xxx-x Series
Low Barrier Silicon Schottky Diodes
Packaged
Electrical Specifications: TA = 25°C
Model
Configuration
MSS30-046-P55 Single Junction
VF
Typ.
V
0.29
VBR
Min.
V
2
CJ
Typ. / Max.
pF
0.23 / 0.30
MSS30-046-P86 Single Junction 0.29
2 0.27 / 0.33
MSS30-050-P55 Single Junction 0.27
2 0.28 / 0.35
MSS30-050-P86 Single Junction 0.27
2 0.32 / 0.38
MSS30-142-E25 Single Junction 0.29
2 0.20 / 0.26
MSS30-142-H20 Single Junction 0.29
2 0.25 / 0.31
MSS30-148-E25 Single Junction 0.27
2 0.25 / 0.31
MSS30-148-H20 Single Junction 0.27
2 0.30 / 0.36
MSS30-154-E25 Single Junction 0.25
2 0.35 / 0.41
MSS30-154-H20 Single Junction 0.25
2 0.40 / 0.46
MSS30-242-E35 Series Tee
0.29
2 0.15 / 0.21
MSS30-242-H30 Series Tee
0.29
2 0.25 / 0.31
MSS30-248-E35 Series Tee
0.27
2 0.25 / 0.31
MSS30-248-H30 Series Tee
0.27
2 0.30 / 0.36
MSS30-254-E35 Series Tee
0.25
2 0.35 / 0.41
MSS30-254-H30 Series Tee
0.25
2 0.40 / 0.46
MSS30-442-E45 Ring Quad
0.29
2 0.15 / 0.21
MSS30-448-E45 Ring Quad
0.27
2 0.20 / 0.26
MSS30-454-E45 Ring Quad
0.25
2 0.25 / 0.31
MSS30-454-H40
Test Conditions
Ring Quad
0.25
IF = 1 mA
2 0.25 / 0.31
IR = 10 µA
VR = 0 V
F = 1 MHz
RS
Typ.
Ω
10
10
6
6
13
13
7
7
3
3
13
13
7
7
3
3
13
7
3
3
RD
Max.
Ω
18
18
15
15
22
22
15
15
12
12
22
22
15
15
12
12
22
15
12
12
I = 5 mA
Rev. V1
FCO
Typ.
GHz
160
160
175
175
175
175
190
190
240
240
175
175
190
190
240
240
175
190
240
240
Outline
P55
P86
P55
P86
E25
H20
E25
H20
E25
H20
E35
H30
E35
H30
E35
H30
E45
E45
E45
H40
Absolute Maximum Ratings
Parameters
Reverse Voltage
Forward Current
Power Dissipation
Operating Temperature
Rating
Rated VBR
50 mA
100 mW, per junction @ TA = 25°C,
derate linearly to 0 @ TA = +150°C
-65°C to +150°C
Storage Temperature
-65°C to +150°C
Soldering Temperature (packaged)
+230°C for 5 seconds
Beam Lead Pull Strength
2
4 G minimum
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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For further information and support please visit:
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MSS30-xxx-x Series
Low Barrier Silicon Schottky Diodes
Typical Performance Curves: TA = 25°C
Rev. V1
3
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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MSS30-xxx-x Series
Low Barrier Silicon Schottky Diodes
Outline Drawings
Rev. V1
4
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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MSS30-xxx-x Series
Low Barrier Silicon Schottky Diodes
Rev. V1
MACOM Technology Solutions Inc. All rights reserved.
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5
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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For further information and support please visit:
https://www.macom.com/support