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MSS50-xxx-x Series
High Barrier Silicon Schottky Diodes
Features
VF, RD and CJ Matching Options
Chip, Beam Lead and Packaged Devices
Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MSS50-xxx-x Series of Schottky diodes are
fabricated on N-Type epitaxial substrates using
proprietary processes that yield the highest FCOs in
the industry. Optimum mixer performance is
obtained with LO power of +2 dBm to +8 dBm per
diode.
Rev. V1
Chip
Electrical Specifications: TA = 25°C
Model
Configuration
VF
Typ.
V
MSS50-048-C15 Single Junction
0.5
VBR
Min.
V
4
CJ
Typ. / Max.
pF
0.12 / 0.15
MSS50-062-C16
Test Conditions
Single Junction
0.5
IF = 1 mA
5 0.50 / 0.55
IR = 10 µA
VR = 0 V
F = 1 MHz
RS
Typ.
Ω
7
RD
Max.
Ω
15
2 12
I = 5 mA
FCO
Typ.
GHz
190
160
Outline
C15
C16
Beam Lead
Electrical Specifications: TA = 25°C
Model
Configuration
VF
Typ.
V
MSS50-146-B10B Single Junction 0.52
VBR
Min.
V
5
CJ
Typ. / Max.
pF
0.07 / 0.12
MSS50-244-B20 Series Tee
0.52
4 0.15 / 0.20
MSS50-448-B40
Test Conditions
Ring Quad
0.52
IF = 1 mA
10 0.20 / 0.25
IR = 10 µA
VR = 0 V
F = 1 MHz
RS
Typ.
Ω
9
RD
Max.
Ω
18
7 16
6 14
I = 5 mA
FCO
Typ.
GHz
253
183
133
Outline
B10B
B20
B40
(Continued next page)
1
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MSS50-xxx-x Series
High Barrier Silicon Schottky Diodes
Packaged
Electrical Specifications: TA = 25°C
Model
Configuration
VF
Typ.
V
VBR
Min.
V
CJ
Typ. / Max.
pF
MSS50-048-P55 Single Junction 0.50
4 0.24 / 0.30
MSS50-048-P86 Single Junction 0.50
4 0.27 / 0.33
MSS50-146-E25 Single Junction 0.52
5 0.20 / 0.26
MSS50-146-H20 Single Junction 0.52
5 0.28 / 0.34
MSS50-244-E30 Series Tee
0.52
5 0.30 / 0.36
MSS50-244-H30 Series Tee
0.52
5 0.36 / 0.42
MSS50-448-E45 Ring Quad
0.52
5 0.30 / 0.36
MSS50-448-H40
Test Conditions
Ring Quad
0.52
IF = 1 mA
5 0.36 / 0.42
IR = 10 µA
VR = 0 V
F = 1 MHz
RS
Typ.
Ω
12
RD
Max.
Ω
10
12 10
15 12
15 12
7 16
7 16
10 10
10 10
I = 5 mA
Rev. V1
FCO
Typ.
GHz
190
190
253
253
183
183
133
133
Outline
P55
P86
E25
H20
E30
H30
E45
H40
Absolute Maximum Ratings
Parameters
Reverse Voltage
Forward Current
Power Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature (packaged)
Beam Lead Pull Strength
Rating
Rated VBR
50 mA
100 mW, per junction @ TA = 25°C,
derate linearly to 0 @ TA = +150°C
-65°C to +150°C
-65°C to +150°C
+230°C for 5 seconds
4 G minimum
2
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For further information and support please visit:
https://www.macom.com/support

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MSS50-xxx-x Series
High Barrier Silicon Schottky Diodes
Typical Performance Curves: TA = 25°C
Rev. V1
3
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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MSS50-xxx-x Series
High Barrier Silicon Schottky Diodes
Outline Drawings
Rev. V1
4
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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MSS50-xxx-x Series
High Barrier Silicon Schottky Diodes
Rev. V1
MACOM Technology Solutions Inc. All rights reserved.
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MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support