N0118GA.pdf 데이터시트 (총 13 페이지) - 파일 다운로드 N0118GA 데이타시트 다운로드

No Preview Available !

N0118GA
SCR
28 September 2016
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier with ultra-sensitive gate in a SOT54 (TO-92) plastic
package.
2. Features and benefits
High voltage capability
Planar passivated for voltage ruggedness and reliability
Ultra sensitive gate
3. Applications
Electronic ballasts
Safety shut down and protection circuits
Sensing circuits
Smoke detectors
Switched Mode Power Supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
VRRM
repetitive peak reverse
voltage
ITSM
Tj
IT(AV)
non-repetitive peak on- half sine wave; Tj(init) = 25 °C;
state current
tp = 10 ms; Fig. 4; Fig. 5
half sine wave; Tj(init) = 25 °C;
tp = 8.3 ms
junction temperature
average on-state
current
half sine wave; Tlead ≤ 67 °C; Fig. 1
IT(RMS)
RMS on-state current half sine wave; Tlead ≤ 67 °C; Fig. 2;
Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 7
Dynamic characteristics
Min Typ Max Unit
- - 600 V
- - 600 V
- - 8A
- - 9A
- - 125 °C
- - 0.51 A
- - 0.8 A
0.5 - 7 µA

No Preview Available !

WeEn Semiconductors
N0118GA
SCR
Symbol
dVD/dt
Parameter
rate of rise of off-state
voltage
Conditions
VDM = 402 V; Tj = 125 °C; RGK = 1 kΩ;
(VDM = 67% of VDRM); exponential
waveform; Fig. 13; Fig. 14
Min Typ Max Unit
75 - - V/µs
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 A anode
2 G gate
3 K cathode
Simplified outline
321
TO-92 (SOT54)
Graphic symbol
AK
G
sym037
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
N0118GA
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
N0118GA
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 September 2016
© WeEn Semiconductors Co., Ltd. 2016. All rights reserved
2 / 13

No Preview Available !

WeEn Semiconductors
N0118GA
SCR
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state
voltage
VRRM
repetitive peak reverse
voltage
IT(AV)
average on-state current half sine wave; Tlead ≤ 67 °C; Fig. 1
IT(RMS)
RMS on-state current half sine wave; Tlead ≤ 67 °C; Fig. 2; Fig. 3
ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; tp = 10 ms;
state current
Fig. 4; Fig. 5
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms
I2t
I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state
current
IT = 0.8 A; IG = 10 mA; dIG/dt = 0.1 A/µs
IGM peak gate current
VRGM
peak reverse gate
voltage
PGM peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 600 V
- 600 V
- 0.51 A
- 0.8 A
- 8A
- 9A
- 0.32 A²s
- 50 A/µs
- 1A
- 5V
- 2W
- 0.1 W
-40 150 °C
- 125 °C
1.2 003aag288 53
Ptot
(W)
0.8
1.9
2.2
a = 1.57
2.8
0.4
0
0
4
conduction form
angle factor
(degrees) a
30 4
60 2.8
90 2.2
120 1.9
180 1.57
0.1 0.2 0.3 0.4 0.5
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 1. Total power dissipation as a function of average on-state current; maximum values
α
IT(AV) (A)
Tlead(max)
(°C)
77
101
125
0.6
N0118GA
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 September 2016
© WeEn Semiconductors Co., Ltd. 2016. All rights reserved
3 / 13

No Preview Available !

WeEn Semiconductors
N0118GA
SCR
1
IT(RMS)
(A)
0.8
67 °C
003aag285
10
IT(RMS)
(A)
8
003aag287
0.6 6
0.4 4
0.2 2
0
-50 0 50 100 150
Tlead (°C)
(1) Tlead = 67 °C
Fig. 2. RMS on-state current as a function of lead
temperature; maximum values
10
ITSM
(A)
8
0
10-2
10-1
1 10
surge duration (s)
f = 50 Hz; Tlead = 67 °C
Fig. 3. RMS on-state current as a function of surge
duration; maximum values
003aag286
6
4
IT ITSM
2
tp t
0 Tj(init) = 25 °C max
1 10 102 103
number of cycles
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
N0118GA
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 September 2016
© WeEn Semiconductors Co., Ltd. 2016. All rights reserved
4 / 13

No Preview Available !

WeEn Semiconductors
103
ITSM
(A)
102
10
N0118GA
SCR
003aag289
IT ITSM
tp t
Tj(init) = 25 °C max
1
10-5
10-4
10-3
10-2
tp (s)
tp = 10 ms
Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values
10-1
N0118GA
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 September 2016
© WeEn Semiconductors Co., Ltd. 2016. All rights reserved
5 / 13