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Z0107NN0
4Q Triac
4 April 2014
Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT223 (SC-73) surface-
mountable plastic package intended for applications requiring enhanced immunity to
noise and direct interfacing to logic level ICs and low power gate drivers.
2. Features and benefits
Direct interfacing to logic level ICs
Enhanced current surge capability
Enhanced noise immunity
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Surface-mountable package
Triggering in all four quadrants
Very sensitive gate
3. Applications
General purpose low power motor control
Home appliances
Industrial process control
Low power AC Fan controllers
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tsp ≤ 105 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 9
Min Typ Max Unit
- - 800 V
- - 12.5 A
- - 1A
0.3 -
5 mA
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NXP Semiconductors
Z0107NN0
4Q Triac
Symbol
Parameter
Conditions
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 9
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 9
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 9
Min Typ Max Unit
0.3 -
5 mA
0.3 -
5 mA
0.3 -
7 mA
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
4 T2 main terminal 2
Simplified outline
4
123
SC-73 (SOT223)
Graphic symbol
T2
sym051
T1
G
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Z0107NN0
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
7. Marking
Table 4. Marking codes
Type number
Z0107NN0
Marking code
107NN0
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tsp ≤ 105 °C; Fig. 1;
Fig. 2; Fig. 3
Z0107NN0
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 April 2014
Min Max Unit
- 800 V
- 1A
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Symbol
ITSM
I2t
dIT/dt
IGM
PGM
PG(AV)
Tstg
Tj
8
IT(RMS)
(A)
6
4
2
Parameter
Conditions
non-repetitive peak on-state
current
I2t for fusing
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
tp = 10 ms; SIN
rate of rise of on-state current IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/
µs; T2+ G+
IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/
µs; T2+ G-
IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/
µs; T2- G-
IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/
µs; T2- G+
peak gate current
peak gate power
average gate power
over any 20 ms period
storage temperature
junction temperature
003aac269
1 .2
IT(RMS)
(A)
0 .8
0 .4
Z0107NN0
4Q Triac
Min Max Unit
- 12.5 A
- 13.8 A
- 0.78 A2s
- 50 A/µs
- 50 A/µs
- 50 A/µs
- 20 A/µs
- 1A
- 2W
- 0.1 W
-40 150 °C
- 125 °C
003a a c270
010-2
10-1
1 10
surge duration (s)
f = 50 Hz; Tsp = 105 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
0
-50 0 50 100 150
Ts p (°C)
Fig. 2. RMS on-state current as a function of solder
point temperature; maximum values
Z0107NN0
Product data sheet
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4 April 2014
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NXP Semiconductors
Z0107NN0
4Q Triac
2 .0
Ptot
(W)
1 .6
1 .2
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
0 .8
alpha
0 .4
003aac259
alpha = 180°
1 2 0°
9 0°
6 0°
3 0°
0 .0
0
0.2 0.4 0.6 0.8
1
Fig. 3.
alpha = conduction angle
a = form factor = IT(RMS) / IT(AV)
Total power dissipation as a function of RMS on-state current; maximum values
16
ITSM
(A)
12
1 .2
IT(RMS ) (A)
003aaf449
8
IT ITSM
4t
0
1
f = 50 Hz
10
1/f
Tj(init) = 25 °C max
102 103
number of cycles
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
Z0107NN0
Product data sheet
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NXP Semiconductors
Z0107NN0
4Q Triac
103
ITSM
(A)
102
10
(1)
(2)
003aaf490
IT ITSM
t
tp
Tj(init) = 25 °C max
1
10- 5
10- 4
10- 3
10- 2
tp (s)
tp ≤ 20 ms
(1) dIT/dt limit
(2) T2- G+ quadrant limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
10- 1
9. Thermal characteristics
Table 6.
Symbol
Rth(j-sp)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to solder
point
full cycle; Fig. 6
thermal resistance
from junction to
ambient
in free air; printed-circuit board
mounted: minimum footprint; full cycle;
Fig. 7
in free air; printed-circuit board
mounted: pad area; full cycle; Fig. 8
Min Typ Max Unit
- - 15 K/W
- 156 - K/W
- 70 - K/W
Z0107NN0
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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