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Z0109MA0
4Q Triac
29 September 2016
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT54 (TO-92) plastic package intended
for use in applications requiring enhanced noise immunity and direct interfacing to logic ICs and
low power gate drivers.
2. Features and benefits
Direct interfacing to logic level ICs
Enhanced current surge capability
Enhanced noise immunity
High blocking voltage of 600V
Planar passivated for voltage ruggedness and reliability
Sensitive gate in four quadrants
Triggering in all four quadrants
3. Applications
General purpose low power motor control
Home appliances
Industrial process control
Low power AC Fan controllers
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
IT(RMS)
RMS on-state current full sine wave; Tlead ≤ 45 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
Tj junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 1A
- - 12.5 A
- - 13.8 A
- - 125 °C
0.4 -
0.4 -
10 mA
10 mA

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WeEn Semiconductors
Z0109MA0
4Q Triac
Symbol
Parameter
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dVcom/dt
rate of change of
commutating voltage
Conditions
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 1 A; Tj = 25 °C; Fig. 10
VDM = 402 V; Tj = 110 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 12
VD = 400 V; Tj = 110 °C; dIcom/
dt = 0.44 A/ms; gate open circuit
Min Typ Max Unit
0.4 -
10 mA
0.4 -
10 mA
- - 10 mA
- 1.3 1.6 V
120 - - V/µs
2 - - V/µs
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T2 main terminal 2
2 G gate
3 T1 main terminal 1
Simplified outline
321
TO-92 (SOT54)
Graphic symbol
T2
sym051
T1
G
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Z0109MA0
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
Z0109MA0
Product data sheet
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29 September 2016
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Z0109MA0
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
full sine wave; Tlead ≤ 45 °C; Fig. 1; Fig. 2;
Fig. 3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;
state current
Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
I2t
I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state
current
IG = 20 mA
IGM
PGM
PG(AV)
Tstg
Tj
1 .2
IT(RMS )
(A)
0 .8
0 .4
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
003aac264
16
IT(RMS)
(A)
12
8
4
Min Max Unit
- 600 V
- 1A
- 12.5 A
- 13.8 A
- 0.78 A²s
- 50 A/µs
- 50 A/µs
- 20 A/µs
- 50 A/µs
- 1A
- 2W
- 0.1 W
-40 150 °C
- 125 °C
003a a f977
0
-50 0 50 100 150
Tle a d (°C )
Fig. 1. RMS on-state current as a function of lead
temperature; maximum values
0
10-2
10-1
1 10
surge duration (s)
f = 50 Hz; Tlead = 45 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
Z0109MA0
Product data sheet
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Z0109MA0
4Q Triac
2 .0
Ptot
(W)
1 .6
1 .2
conduction
angle, α
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.967
1.570
1.329
1.110
0 .8
0 .4
α
α
003aac259
α = 180°
120°
9 0°
6 0°
30°
0 .0
0
0.2 0.4 0.6 0.8
1
alpha = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
16
ITSM
(A)
12
1 .2
IT(RMS ) (A)
003aaf449
8
IT ITSM
4t
0
1
f = 50 Hz
10
1/f
Tj(init) = 25 °C max
102 103
number of cycles
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
Z0109MA0
Product data sheet
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WeEn Semiconductors
Z0109MA0
4Q Triac
103
ITSM
(A)
102
10
(1)
(2)
003aaf490
IT ITSM
t
tp
Tj(init) = 25 °C max
1
10- 5
10- 4
10- 3
10- 2
tp ≤ 20 ms
(1) dIT/dt limit
(2) T2- G+ quadrant limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
tp (s)
10- 1
Z0109MA0
Product data sheet
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29 September 2016
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