MK0540.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 MK0540 데이타시트 다운로드

No Preview Available !

MK0540 LDMOS TRANSISTOR
400W, 28V High Power RF LDMOS FETs
Description
The MK0540 is a 400-watt, highly rugged, unmatched LDMOS FET, designed for
wide-band commercial and industrial applications with frequencies HF to 500MHz. It can
be used in Class AB/B and Class C for all typical modulation formats.
Document Number: MK0540
Product Datasheet V3.0
MK0540
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 2000 mA, CW.
Freq(MHz)
GPdB
P-1dB (W)
Eff(%)
500 17 380 60
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 1.2 A, Two tone space 5MHz.
Freq(MHz)
GPdB
POUT(W)
Eff(%)
IMD3(dBc)
225 21 79 29 -25
300 19.3 89 28 -35
400 16.9 87 31 -39
500 17.2 89 43 -28
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 1.3 A, Two tone space 1MHz.
Freq(MHz)
GPdB
POUT(W)
Eff(%)
IMD3(dBc)
310 19 100 30 -32
330 20 100 30 -32
360 19.5 100 31 -34
390 18.7 100 33 -36
410 17.2 100 35 -36
Drain
12
Gate Source
34
5
Figure 1. Pin Connection
Features
High Efficiency and Linear Gain Operations
Integrated ESD Protection
Excellent thermal stability, low HCI drift
Large Positive and Negative Gate/Source Voltage Range
for Improved Class C Operation
Pb-free, RoHS-compliant
Suitable Applications
2-30MHz (HF or Short wave communication)
30-88MHz (Ground communication)
54-88MHz (TV VHF I)
88-108MHz (FM)
118 -140MHz (Avionics)
136-174MHz (Commercial ground communication)
160-230MHz (TV VHF III)
30-512MHz (Jammer, Ground/Air communication)
470-860MHz (TV UHF)
100kHz - 1000MHz (ISM, instrumentation)
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Symbol
VDSS
Value
+95
Unit
Vdc
1/4

No Preview Available !

MK0540 LDMOS TRANSISTOR
Document Number: MK0540
Product Datasheet V3.0
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
VGS
-10 to +10
Vdc
VDD +40 Vdc
Tstg
-65 to +150
C
Case Operating Temperature
TC
+150
C
Operating Junction Temperature
Table 2. Thermal Characteristics
TJ
+225
C
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
TC= 85C, TJ=200C, DC test
Table 3. ESD Protection Characteristics
RJC
0.3
C/W
Test Methodology
Class
Human Body Model (per JESD22--A114)
Class 2
Table 4. Electrical Characteristics (TA = 25 unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
DC Characteristics (per half section)
Drain-Source Voltage
VGS=0, IDS=1.0mA
V(BR)DSS
95
98
V
Zero Gate Voltage Drain Leakage Current
(VDS = 75V, VGS = 0 V)
IDSS
——
——
1
A
Zero Gate Voltage Drain Leakage Current
(VDS = 28 V, VGS = 0 V)
IDSS
——
——
1
A
Gate--Source Leakage Current
(VGS = 10, VDS = 0 V)
IGSS
——
——
1
A
Gate Threshold Voltage
(VDS = 28V, ID = 650 A)
Gate Quiescent Voltage
(VDD = 28 V, ID = 1.0 A, Measured in Functional Test)
VGS(th)
VGS(Q)
——
——
2.19
3.0
——
——
V
V
Common Source Input Capacitance
(VGS = 0V, VDS =28 V, f = 1 MHz)
CISS
187
pF
Common Source Output Capacitance
(VGS = 0V, VDS =28 V, f = 1 MHz)
COSS
79
pF
Common Source Feedback Capacitance
(VGS = 0V, VDS =28 V, f = 1 MHz)
CRSS
4.6
Functional Tests (In Demo Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2000 mA, f = 500 MHz, CW Signal Measurements.
Power Gain
Gp —— 17 ——
Drain Efficiency@P1dB
1 dB Compression Point
Input Return Loss
D —— 60 ——
P-1dB —— 380 ——
IRL —— -7 ——
pF
dB
%
W
dB
Load Mismatch (In Innogration Test Fixture, 50 ohm system): VDD = 28 Vdc, IDQ = 2000 mA, f = 500 MHz
VSWR 20:1 at 380W pulse CW Output Power
No Device Degradation
2/4

No Preview Available !

MK0540 LDMOS TRANSISTOR
Package Outline
Flanged ceramic package; 2 mounting holes; 4 leads
Document Number: MK0540
Product Datasheet V3.0
UNIT A b c
D De E EF H H1 L p Q q UUWW
4.72 3.94 0.15 20.02 19.96
9.50 9.53 1.14 19.94 12.83 5.33 3.38 1.70
34.16 9.91
mm 8.89
27.94
0.25 0.51
3.43 3.68 0.08 19.61 19.66
9.30 9.25 0.89 18.92 12.57 4.32 3.12 1.45
33.91 9.65
0.186 0.155 0.006 0.788 0.786
0.374 0.375 0.045 0.785 0.505 0.210 0.133 0.067
1.345 0.390
inches
0.35
1.100
0.01 0.02
0.135 0.145 0.003 0.772 0.774
0.366 0.364 0.035 0.745 0.495 0.170 0.123 0.057
1.335 0.380
OUTLINE
VERSION
PKG-B4E
REFERENCE
IEC JEDEC JEITA
EUROPEAN
PROJECTION
ISSUE DATE
03/12/2013
3/4

No Preview Available !

MK0540 LDMOS TRANSISTOR
Revision history
Document Number: MK0540
Product Datasheet V3.0
Table 5. Document revision history
Date
Revision
2017/2/22
Rev 1.0
2017/3/17
2017/3/17
Rev 2.0
Rev 3.0
Datasheet Status
Preliminary Datasheet
Product Datasheet
Modification on typo of upper frequency from 1000MHz to 500MHz
Disclaimers
Specifications are subject to change without notice. Innogration believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Innogration for any infringement of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Innogration . Innogration
makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose.“Typical” parameters
are the average values expected by Innogration in large quantities and are provided for information purposes only. These values can and
do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s
technical experts for each application. Innogration products are not designed, intended or authorized for use as components in
applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Innogration
product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear
facility. For any concerns or questions related to terms or conditions, pls check with Innogration and authorized distributors
Copyright by Innogration (Suzhou) Co.,Ltd.
4/4