MK1518C.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 MK1518C 데이타시트 다운로드

No Preview Available !

MK1518C LDMOS TRANSISTOR
180W, 28V High Power RF LDMOS FETs
Description
The MK1518C is a 180-watt high performance, unmatched LDMOS FET, designed for
wide-band commercial and industrial applications with frequencies HF to 1.5GHz.
Document Number: MK1518C
Preliminary Datasheet V1.0
MK1518C
Typical Performance (On Innogration 1GHz narrow band fixture with device soldered):
VDD = 28 Volts, IDQ = 200 mA, CW.
FrequencyGp (dB)
P-1dB (W)
D@P-1 (%)
1000 MHz
18
180
65
Features
High Efficiency and Linear Gain Operations
Integrated ESD Protection
Excellent thermal stability, low HCI drift
Large Positive and Negative Gate/Source Voltage Range
for Improved Class C Operation
Pb-free, RoHS-compliant
Suitable Applications
1GHz below high performance amplifier where demands
single ended device
1300MHz particle accelerator
Table 1. Maximum Ratings
Rating
Symbol
Drain--Source Voltage
VDSS
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
VGS
VDD
Tstg
Case Operating Temperature
TC
Operating Junction Temperature
Table 2. Thermal Characteristics
TJ
Characteristic
Symbol
Thermal Resistance, Junction to Case
TC= 85C, TJ=200C, DC test
RJC
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Table 4. Electrical Characteristics (TA = 25 unless otherwise noted)
Characteristic
Symbol
DC Characteristics
Value
+65
-10 to +10
+32
-65 to +150
+150
+225
Value
0.4
Class
Class 2
Min Typ
Unit
Vdc
Vdc
Vdc
C
C
C
Unit
C/W
Max Unit
1/4

No Preview Available !

MK1518C LDMOS TRANSISTOR
Document Number: MK1518C
Preliminary Datasheet V1.0
Drain-Source Voltage
VGS=0, IDS=1.0mA
V(BR)DSS
65
70
Zero Gate Voltage Drain Leakage Current
(VDS = 28 V, VGS = 0 V)
IDSS
——
——
1
Gate--Source Leakage Current
(VGS = 10 V, VDS = 0 V)
IGSS
——
——
1
Gate Threshold Voltage
(VDS = 28V, ID = 600 A)
Gate Quiescent Voltage
(VDD = 28 V, ID = 200 mA, Measured in Functional Test)
VGS(th)
VGS(Q)
——
——
1.98
2.53
——
——
Drain source on state resistance
(VDS = 0.1V, VGS = 10 V)
Rds(on)
220
Common Source Input Capacitance
(VGS = 0V, VDS =28 V, f = 1 MHz)
CISS
170
Common Source Output Capacitance
(VGS = 0V, VDS =28 V, f = 1 MHz)
COSS
70
Common Source Feedback Capacitance
(VGS = 0V, VDS =28 V, f = 1 MHz)
CRSS
3
Functional Tests (In Demo Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 200 mA, f = 1000 MHz, CW Signal Measurements.
Power Gain
Gp —— 18 ——
Drain Efficiency@P1dB
1 dB Compression Point
Input Return Loss
D —— 65 ——
P-1dB —— 100 ——
IRL —— -7 ——
Load Mismatch (In Innogration Test Fixture, 50 ohm system): VDD = 28 Vdc, IDQ = 200 mA, f = 1000 MHz
VSWR 10:1 at 180W CW Output Power
No Device Degradation
V
A
A
V
V
mΩ
pF
pF
pF
dB
%
W
dB
2/4

No Preview Available !

MK1518C LDMOS TRANSISTOR
Document Number: MK1518C
Preliminary Datasheet V1.0
Package Outline
Flanged ceramic package; 2 mounting holes; 2 leads1DRAIN2GATE3SOURCE
UNIT
A
b
c
D DE EF
H
L
p
Q q UUWW
4.72 12.83 0.15 20.02 19.96 9.50 9.53 1.14 19.94 5.33 3.38 1.70
34.16 9.91
mm
27.94
0.25 0.51
3.43 12.57 0.08 19.61 19.66 9.30 9.25 0.89 18.92 4.32 3.12 1.45
33.91 9.65
0.186 0.505 0.006 0.788 0.786 0.374 0.375 0.045 0.785 0.210 0.133 0.067
1.345 0.390
inches
1.100
0.01 0.02
0.135 0.495 0.003 0.772 0.774 0.366 0.364 0.035 0.745 0.170 0.123 0.057
1.335 0.380
OUTLINE
VERSION
PKG-B2E
REFERENCE
IEC JEDEC JEITA
EUROPEAN
PROJECTION
ISSUE DATE
03/12/2013
3/4

No Preview Available !

MK1518C LDMOS TRANSISTOR
Revision history
Table 5. Document revision history
Date
Revision
2017/8/2
Rev 1.0
Datasheet Status
Preliminary Datasheet Creation
Document Number: MK1518C
Preliminary Datasheet V1.0
Disclaimers
Specifications are subject to change without notice. Innogration believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Innogration for any infringement of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Innogration . Innogration
makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose.“Typical” parameters
are the average values expected by Innogration in large quantities and are provided for information purposes only. These values can and
do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s
technical experts for each application. Innogration products are not designed, intended or authorized for use as components in
applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Innogration
product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear
facility. For any concerns or questions related to terms or conditions, pls check with Innogration and authorized distributors
Copyright by Innogration (Suzhou) Co.,Ltd.
4/4