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STH90N55F4-2
N-channel 55 V, 0.0064 Ω, 90 A, H2PAK
STripFET™ DeepGATE™ Power MOSFET
Features
Type
VDSS RDS(on) max
ID
STH90N55F4-2 55 V
< 0.008 Ω
t(s)Exceptional dv/dt capability
Extremely low on-resistance RDS(on)
uc100% avalanche tested
90 A
rodApplications
te PSwitching applications
oleDescription
bsThe device is N-channel Power MOSFETs
Odeveloped using ST’s STripFET™ DeepGATE™
-technology. The device has a new gate structure
)and is specially designed to minimize on-state
t(sresistance to provide superior switching
ducperformance.
2
3
3
1
H²PAK
Figure 1. Internal schematic diagram
$
'
Obsolete Pro 3
!-V
Table 1. Device summary
Order code
Marking
Packages
Packaging
STH90N55F4-2
90N55F4
H²PAK
Tape and reel
August 2011
Doc ID 15608 Rev 4
1/16
www.st.com
16

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Contents
Contents
STH90N55F4-2
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
........................... 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
)4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
ct(s5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Obsolete Product(s) - Obsolete Produ6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 Doc ID 15608 Rev 4

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STH90N55F4-2
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS Drain-source voltage (VGS = 0)
55 V
VGS Gate-source voltage
± 20
V
ID Drain current (continuous) at TC = 25 °C
90 A
ID Drain current (continuous) at TC = 100 °C
65 A
IDM (1) Drain current (pulsed)
t(s)PTOT Total dissipation at TC = 25 °C
cDerating factor
duEAS (2) Single pulse avalanche energy
roTstg Storage temperature
PTj Max. operating junction temperature
te1. Pulse width limited by safe operating area
le2. Starting Tj = 25 °C, ID= 32.5 A, VDD= 45 V
ObsoTable 3. Thermal data
) -Symbol
Parameter
t(sRthj-case Thermal resistance junction-case max
ucRthj-a Thermal resistance junction-ambient max
Obsolete ProdTl
Maximum lead temperature for soldering
purpose
360
150
1
290
– 55 to 175
A
W
W/°C
mJ
°C
Value
1
62.5
300
Unit
°C/W
°C/W
°C
Doc ID 15608 Rev 4
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Electrical characteristics
2 Electrical characteristics
STH90N55F4-2
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source
V(BR)DSS Breakdown voltage
ID = 250 µA, VGS = 0
55
V
Zero gate voltage
VDS = max rating
1 µA
IDSS Drain current (VGS = 0)
t(s)IGSS
cVGS(th)
roduRDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
VDS = max rating,TC=125 °C
100 µA
VGS = ± 20 V
100 nA
VDS = VGS, ID = 250 µA
2
4V
VGS = 10 V, ID = 45 A
0.0064 0.008 Ω
te PTable 5.
leSymbol
Dynamic
Parameter
bsoCiss
OCoss
) -Crss
ct(sQg
uQgs
rodQgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
te PTable 6.
leSymbol
Switching times
Parameter
bso td(on)
O tr
Turn-on delay time
Rise time
Test conditions
VDS = 25 V, f = 1 MHz,
VGS = 0
VDD = 27.5 V, ID = 90 A,
VGS = 10 V
Figure 14
Min. Typ. Max. Unit
4800
pF
- 350 - pF
210 pF
90 nC
- 25 - nC
26 nC
Test conditions
VDD = 27.5 V, ID = 90 A
RG = 4.7 Ω VGS = 10 V
Figure 13
Min. Typ. Max. Unit
20 ns
--
60 ns
td(off)
tf
Turn-off-delay time
Fall time
VDD = 27.5 V, ID = 90 A,
RG = 4.7 Ω, VGS = 10 V
Figure 13
55
-
30
ns
-
ns
4/16 Doc ID 15608 Rev 4

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STH90N55F4-2
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 90 A, VGS = 0
-
-
90 A
360 A
1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 90 A, VDD = 44 V
50
di/dt = 100 A/µs,
- 105
Tj = 150 °C
4
Figure 15
ns
nC
A
1. Pulse width limited by safe operating area.
Obsolete Product(s) - Obsolete Product(s)2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15608 Rev 4
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