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2SD1085(K)
Silicon NPN Triple Diffused
Application
High voltage switching, igniter
Outline
TO-220AB
1
23
1. Base
2. Collector
(Flange)
3. Emitter
2
1
4.5 k250
(Typ) (Typ)
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC(peak)
PC*1
Tj
Tstg
Rating
300
300
7
3
6
40
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C

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2SD1085(K)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V(BR)CBO
voltage
300
Collector to emitter sustain
voltage
VCEO(sus)
300
Emitter to base breakdown
voltage
V(BR)EBO
7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
ICEO
hFE
VCE(sat)
500
Base to emitter saturation
voltage
VBE(sat)
Turn on time
Turn off time
Note: 1. Pulse test.
ton
toff
Typ
1.0
22
Max Unit
500 V
—V
—V
100 µA
1.5 V
2.0 V
— µs
— µs
Test conditions
IC = 0.1 mA, IE = 0
IC = 2 A, PW = 50 µs,
f = 50 Hz, L = 10 mH
IE = 50 mA, IC = 0
VCE = 300 V, RBE =
VCE = 2 V, IC = 2 A*1
IC = 2 A, IB = 20 mA*1
IC = 2 A, IB1 = –IB2 = 20 mA
Maximum Collector Dissipation Curve
60
40
20
0 50 100 150
Case Temperature TC (°C)
Area of Safe Operation
10
3 iC (peak)
IC max.
1.0
0.3
Ta = 25°C
0.1
0.03
0.01
0.003
0.001
0.5 1.0 2 5 10 20 50 100 200 500
Collector to Emitter Voltage VCE (V)
2

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Typical Output Characteristics
5
TC = 25°C
4
3
1.0
0.8
0.6
0.4
2
0.2 mA
1
IB = 0
012345
Collector to Emitter Voltage VCE (V)
10,000
DC Current Transfer Ratio
vs. Collector Current
5,000
2,000
1,000
= 75°C
T C 25
–25
500
200
100
0.1 0.2
VCE = 2V
Pluse Test
0.5 1.0 2
5
Collector Current IC (A)
10
Saturation Voltage vs. Collector Current
10
TC = 25°C
5 IC = 100IB
Pluse Test
2 VBE(sat)
1.0
0.5 VCE(sat)
0.2
0.1
0.1 0.2 0.5 1.0 2
5
Collector Current IC (A)
10
2SD1085(K)
3

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2SD1085(K)
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1. This document may, wholly or partially, be subject to change without notice.
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of this document without HitachiÕs permission.
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4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
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examples described herein.
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APPLICATIONS.
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