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GT60N323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N323
Voltage Resonance Inverter Switching Application
Unit: mm
diode included between emitter and collector
Enhancement mode type
High speed IGBT : tf = 0.19 μs (typ.) (IC = 60 A)
diode : trr = 0.35 μs (max.) (di/dt = 200 A/μs)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
symbol
Rating
Unit
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
DC
1 ms
Diode forward current
DC
1 ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature
Screw Torque
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
1050
±25
60
120
25
50
190
150
55~150
0.8
V
V
A
A
W
°C
°C
Nm
JEDEC
JEITA
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Marking
Collector
Gate
Emitter
TOSHIBA
60N323
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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Electrical Characteristics (Ta = 25°C)
Characteristic
Gate Leakage Current
Collector Cut-off Current
Gate-Emitter Cut-off Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Rise Time
Turn-on Time
Switching Time Fall Time
Turn-off Time
Symbol
Test Condition
IGES
VGE = ±25 V, VCE = 0
ICES
VCE = 1050 V, VGE = 0
VGE (OFF) IC = 60 mA, VCE = 5 V
VCE (sat) (1) IC = 10 A, VGE = 15 V
VCE (sat) (2) IC = 60 A, VGE = 15 V
Cies VCE = 10 V, VGE = 0, f = 1 MHz
tr
ton 30 Ω
tf 15 V
0 600 V
toff 15 V
Diode forward voltage
Reverse Recovery Time
Thermal ResistanceIGBT
Thermal Resistancediode
VF
trr
Rth(j-c)
Rth(j-c)
IF = 25 A, VGE = 0
IF = 25 A, VGE = 0, di/dt = −200 A/μs
GT60N323
Min Typ. Max Unit
⎯ ⎯ ±500 nA
⎯ ⎯ 1.0 mA
6.0 9.0 V
2.2 2.8 V
2.7 3.3 V
6800
pF
0.4
0.6
0.19 0.25 μs
0.5
3.0 V
0.35 μs
⎯ ⎯ 0.66 °C/W
⎯ ⎯ 1.38 °C/W
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GT60N323
RESTRICTIONS ON PRODUCT USE
20070701-EN
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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