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80EPS..PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 80 A
Base
cathode
4, 2
TO-247AC
1
Anode
3
Anode
PRODUCT SUMMARY
VF at 80 A
IFSM
VRRM
1.17 V
1450 A
800/1200 V
DESCRIPTION/FEATURES
The 80EPS..PbF rectifier High Voltage Series
has been optimized for very low forward voltage
drop, with moderate leakage. The glass
passivation technology used has reliable
operation up to 150 °C junction temperature.
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package
outlines.
This product has been designed and qualified for industrial
level.
Compliant to RoHS directive 2002/95/EC.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Sinusoidal waveform
Range
80 A, TJ = 25 °C
VALUES
80
800/1200
1450
1.17
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
80EPS08PbF
80EPS12PbF
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
IRRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
IF(AV)
IFSM
TC = 100 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
Maximum I2t for fusing
I2t 10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
Maximum I2t for fusing
I2t t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
80
1450
1500
10 500
14 000
105 000
UNITS
A
A2s
A2s
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94347
Revision: 07-Jul-09
For technical questions, contact: diodestech@vishay.com
www.vishay.com
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80EPS..PbF High Voltage Series
Vishay High Power Products Input Rectifier Diode, 80 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
Threshold voltage
rt
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
80 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
VR = Rated VRRM
VALUES
1.17
3.17
0.73
0.1
1.0
UNITS
V
mΩ
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
RthJA
RthCS
Mounting surface, flat, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-247AC (JEDEC)
VALUES
- 40 to 150
UNITS
°C
0.35
40 °C/W
0.2
6g
0.21 oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
80EPS08
80EPS12
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For technical questions, contact: diodestech@vishay.com
Document Number: 94347
Revision: 07-Jul-09

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80EPS..PbF High Voltage Series
Input Rectifier Diode, 80 A Vishay High Power Products
150
80EPS.. Series
140 RthJC (DC) = 0.35 K/W
130 Ø
Conduction angle
120
110
100
90
80
0
30° 60°
90°
120°
180°
10 20 30 40 50 60 70 80 90
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
150
80EPS.. Series
140 RthJC (DC) = 0.35 K/W
130
120
110
100
90
0
Ø
Conduction period
30°
60°
90°
120°
180°
DC
20 40 60 80 100 120 140
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
120
180°
120°
100 90°
60°
30°
80
RMS limit
60
Ø
40 Conduction angle
80EPS.. Series
20 TJ = 150 °C
0
0 10 20 30 40 50 60 70 80 90
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
160
DC
140 180°
120°
120 90°
60°
100 30°
80 RMS limit
60 Ø
Conduction period
40
80EPS.. Series
20 TJ = 150 °C
0
0 20 40 60 80 100 120 140
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
1600
1400
1200
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
1000
800
600 80EPS.. Series
400
1
10 100
Number of Equal Amplitudr Halfe
Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
1800
1600
1400
1200
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
1000
800
600
80EPS.. Series
400
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94347
Revision: 07-Jul-09
For technical questions, contact: diodestech@vishay.com
www.vishay.com
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80EPS..PbF High Voltage Series
Vishay High Power Products Input Rectifier Diode, 80 A
1000
100
TJ = 25 °C
10 TJ = 150 °C
80EPS.. Series
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
1
Steady state value
(DC operation)
0.1
0.01
0.0001
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
80EPS.. Series
0.001
0.01 0.1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
1
10
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For technical questions, contact: diodestech@vishay.com
Document Number: 94347
Revision: 07-Jul-09

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80EPS..PbF High Voltage Series
Input Rectifier Diode, 80 A Vishay High Power Products
ORDERING INFORMATION TABLE
Device code 80 E P S 12 PbF
1 2 3 456
1 - Current rating (80 = 80 A)
2 - Circuit configuration:
E = Single diode
3 - Package:
P = TO-247AC
4 - Type of silicon:
S = Standard recovery rectifier
5 - Voltage ratings
08 = 800 V
12 = 1200 V
6-
None = Standard production
PbF = Lead (Pb)-free
Dimensions
Part marking information
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95223
www.vishay.com/doc?95226
Document Number: 94347
Revision: 07-Jul-09
For technical questions, contact: diodestech@vishay.com
www.vishay.com
5