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B0210D
N-Channel 100-V (D-S) MOSFET
General Description
B0210D is the N-Channel logic enhancement mode
power field effect transistors to provide excellent
RDS(on), low gate charge and low gate resistance.
It’s up to 100V operation voltage is suitable for
switching mode power supply, SMPS, notebook
computer power management and other battery
powered circuits
Features
RDS(ON)=220m@VGS=10V
RDS(ON)=270m@VGS=4.5V
High Density Cell Design for Low RDS(ON)
Exceptional On-Resistance and
Maximum DC Current
TO-252-3 Package
Pin Configuration
D
G
S
Applications
LED backlight
LCD monitor
LCD TV
DC/DC Converter
Load Switch
Absolute Maximum Ratings (TA=25 Unless Otherwise Noted):
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(tJ=150 )
TA=25
TA=70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA=25
Maximum Power Dissipation
TA=70
Operating Junction Temperature
Thermal Resistance-Junction to Case
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
RθJC
N-Channel
100
±20
10
6
20
1.7
25
16
-55 to 150
5
Unit
V
V
A
A
A
W
/W
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