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Technical Data : N0910NS260
Page 1 of 3
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HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
Features:
. All Diffused Structure
. Center Amplifying Gate Configuration
. Blocking capabilty up to 2600 volts
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
Device Type VRRM (1) VDRM (1) VRSM (1)
N0910NS260
2600
2600
2600
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse
leakage and off state leakage
Critical rate of voltage rise
IRRM / IDRM
dV/dt (4)
60/60 mA
1000 V/µsec
Conducting - on state
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance
with EIA/NIMA Standard RS-397, Section
5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit,
comprising a 0.2 µF capacitor and 20 ohms
resistance in parallel with the thristor under
test.
Parameter
Average value of on-state current
Peak one cpstcle surge
(non repetitive) current
I square t
Peak on-state voltage
Critical rate of rise of on-state
current (5, 6)
Critical rate of rise of on-state
current (6)
Symbol Min.
IT(AV)
ITSM
I2t
VTM
di/dt
di/dt
Max.
Typ. Units
910 A
9200
A
423000
2.2
600
300
A2s
V
A/µs
A/µs
Conditions
Sinewave,180o conduction,Ths=55oC
10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
10.0 msec
ITM =1700 A; Tj = 125 oC
Switching from VDRM 1500 V,
non-repetitive
Switching from VDRM 1500 V

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Technical Data :
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ELECTRICAL CHARACTERISTICS AND RATINGS - N910NS260
PowerThyristor
Gating
Parameter
Peak gate power dissipation
Average gate power dissipation
Symbol
PGM
PG(AV)
Min.
Max. Typ.
200
5
Units
W
W
Conditions
tp = 40 us
Peak gate current
Gate current required to trigger all
units
IGM
IGT
Gate voltage required to trigger all VGT
units
10
300
150
125
5
3
0.30
Peak negative voltage
VGRM
5
A
mA VD = 6 V;RL = 3 ohms;Tj = -40 oC
mA VD = 6 V;RL = 3 ohms;Tj = +25 oC
mA VD = 6 V;RL = 3 ohms;Tj = +125oC
V VD = 6 V;RL = 3 ohms;Tj = -40 oC
V VD = 6 V;RL = 3 ohms;Tj = 0-125oC
V VD = Rated VDRM; RL = 1000 ohms;
Tj = + 125 oC
V
Dynamic
Parameter
Delay time
Turn-off time (with VR = -50 V)
Reverse recovery charge
Symbol Min.
td
tq
Qrr
Max. Typ. Units Conditions
0.7 µs
1.5
125 µs
250
ITM = 50 A; VD = Rated VDRM
Gate pulse: VG = 20 V; RG = 20 ohms;
tr = 0.1 µs; tp = 20 µs
ITM = 1000 A; di/dt = 25 A/µs;
VR -50 V; Re-applied dV/dt = 20
V/µs linear to 50% VDRM; VG = 0;
Tj = 125 oC; Duty cpstcle 0.01%
µC ITM = 1000 A; di/dt = 25 A/µs;
* VR -50 V
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Operating temperature
Storage temperature
Symbol
Tj
Tstg
Min.
-40
-40
Max.
+125
+125
Typ.
Units
oC
oC
Conditions
Thermal resistance - junction to
case
Mounting force
Weight
RΘ (j-c)
P
W
0.042
oC/W Double sided cooled
12 15
kN
g
460
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 4 of this Technical Data

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CASE OUTLINE AND DIMENSIONS.
Technical Data : Page 3 of 3
N0910NS260
- Power Thyristor