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Ordering number : EN1721B
2SB1126 / 2SD1626
SANYO Semiconductors
DATA SHEET
2SB1126 / 2SD1626 PNP / NPN Epitaxial Planar Silicon Transistors
For Various Drivers
Applications
Relay drivers, hammer drivers, lamp drivers, motor drivers.
Features
High DC current gain (4000 or greater).
Large current capacity.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications ( ) : 2SB1126
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Mounted on a ceramic board (250mm20.8mm)
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Marking 2SB1126 : BI
2SD1626 : DI
Symbol
ICBO
IEBO
Conditions
VCB=(--)40V, IE=0A
VEB=(--)8V, IC=0A
min
Ratings
(--)80
(--)50
(--)10
(--)1.5
(--)3
500
1.5
150
--55 to +150
Unit
V
V
V
A
A
mW
W
°C
°C
Ratings
typ
max
Unit
(--)100 nA
(--)100 nA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
www.semiconductor-sanyo.com/network
31010HA TK IM / O2003TN (KOTO)/92098HA (KT)/4107KI/3055MW, TS No.1721-1/4

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Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
2SB1126 / 2SD1626
Symbol
Conditions
hFE1
hFE2
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE=(--)2V, IC=(--)500mA
VCE=(--)2V, IC=(--)10mA
VCE=(--)10V, IC=(--)50mA
IC=(--)500mA, IB=(--)0.5mA
IC=(--)500mA, IB=(--)0.5mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=
IE=(--)10μA, IC=0A
Package Dimensions
unit : mm (typ)
7007B-004
min
4000
3000
(--)80
(--)50
(--)10
Ratings
typ
120
(--)0.9
(--)1.5
max
(--)1.5
(--)2.0
Unit
MHz
V
V
V
V
V
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
IC -- VCE
--0.0-8-m0.A06mA
--0.04mA
--0.02mA
2SB1126
IB=0mA
--2 --4 --6 --8 --10 --12
Collector-to-Emitter Voltage, VCE -- V ITR08937
IC -- VCE
1.6
1.4
1.2
0.08mA
0.06mA
2SD1626
1.0 0.04mA
0.8
0.6
0.02mA
0.4
0.2
0 IB=0mA
0 2 4 6 8 10 12
Collector-to-Emitter Voltage, VCE -- V ITR08938
No.1721-2/4

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2SB1126 / 2SD1626
5 hFE -- IC
5 hFE -- IC
10 10
2SB1126
2SD1626
7
VCE= --2V
7
VCE=2V
55
33
22
4
10
7
5
3
--0.01
3
2
2 3 5 7 --0.1
2 3 5 7 --1.0
2
Collector Current, IC -- A
ITR08939
VCE(sat) -- IC
2SB1126
IC / IB=1000
--10
7
5
3
2
4
10
7
5
3
0.01
2 3 5 7 0.1
2 3 5 7 1.0
2
Collector Current, IC -- A
ITR08940
VCE(sat) -- IC
3
2SD1626
2 IC / IB=1000
10
7
5
3
2
--1.0
7
5
5 7 --0.01
3
2
2 3 5 7 --0.1 2 3 5 7 --1.0 2
Collector Current, IC -- A
ITR08941
VBE(sat) -- IC
2SB1126
IC / IB=1000
--10
7
5
3
2
1.0
7
5
5 7 0.01
3
2
2 3 5 7 0.1
2 3 5 7 1.0
2
Collector Current, IC -- A
ITR08942
VBE(sat) -- IC
2SD1626
IC / IB=1000
10
7
5
3
2
--1.0
7
5
5 7 --0.01
5
ICP=3A
3
2 IC=1.5A
2 3 5 7 --0.1 2 3 5 7 --1.0 2
Collector Current, IC -- A
ITR08943
ASO
2SB1126 / 2SD1626
1.0
7
5
3
2
DC operation
0.1
7
5
3
2 For PNP, minus sign is omitted
5 7 1.0
2 3 5 7 10
2 3 5 7 100
Collector-to-Emitter Voltage, VCE -- V ITR08946
1.0
7
5
5 7 0.01
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
2 3 5 7 0.1 2 3 5 7 1.0 2
Collector Current, IC -- A
ITR08944
PC -- Ta
2SB1126 / 2SD1626
Mounted
on
a ceramic board (250mm
No heat sink
20.8mm)
40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C ITR08945
No.1721-3/4

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2SB1126 / 2SD1626
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
PS No.1721-4/4