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LITE-ON
SEMICONDUCTOR
L13ESD5V0CC5-4
BIDIRECTIONAL
ESD PROTECTION DIODE
STAND-OFF VOLTAGE - 5.0 Volts
POWER DISSIPATION - 130 WATTS
GENERAL DESCRIPTION
The L13ESD5V0CC5-4 is designed to protect sensitive electronics
from damage or latch up due to ESD, lightning, and other voltage
induced transient events. The device will protect four line operating
at 5.0 volts.
FEATURES
Bi-directional ESD Protectionof four line.
Max. peak pulse power : Ppp = 130W at tp = 8/20 us
Low clamping voltage.
ESD protection > 25KV
IEC 61000-4-2, level 4 ( ESD ), > 15KV ( air ) ; > 8KV ( contact ).
IEC 61000-4-5, Ipp = 10A at tp = 8/20 us
APPLICATION
Computers and peripherals
Communication system
Audio & video equipment
Portable instrumentation
MECHANICAL DATA
Case Material: "Green" molding compound UL flammability
classification 94V-0 (No Br.Sb, Cl)
Terminals: Lead Free Plating (Matte Tin Finish)
Component in accordance to RoHs 2002/95/E
SOT23-5L
SOT23-5L
DIM.
A
A1
A2
b
D
MIN.
1.05
0.00
1.05
0.30
2.82
MAX.
1.25
0.10
1.15
0.50
3.02
E 1.50 1.70
E1 2.65 2.95
e 0.95(BSC)
e1 1.80 2.00
All Dimensions in millimeter
PIN A SSIGNMENT
1, 3, 4, 5
I/O Lines
2 Ground
4 lines Protection
MAXIMUM RATINGS (Tj= 25unless otherwise noticed)
Rating
Peak pulse Power ( 8/20us Waveform )
Peak Pulse Current ( 8/20us Waveform )
Operating Junction Temperature Range
Storage Temperature Range
Soldering Temperature, t max = 10s
Symbol
PPPM
IPP
TJ
Tstg
TL
Value
130
10
-55 to + 150
-55 to + 150
260
Unit
W
A
ELECTRICAL CHARACTERISTICS (Tj= 25unless otherwise noticed)
Parameter
Symbol
Conditions
MIn Max Unit
Reverse standoff voltage
Reverse leakage current
Breakdown voltage
Junction capacitance(Each l/O pin and ground)
Clamping voltage
Clamping voltage
VDRM
IRM
VBR
CJ
VCL
VCL
---
VDRM = 5 V
IR = 1 mA
VR = 0 V , f = 1MHz
IPP = 1 A ( 8/20us )
IPP = 10 A ( 8/20us )
--- 5.0 V
--- 100 nA
5.5 9.5 V
--- 15 pF
--- 10 V
--- 13 V
REV.0, May-2012, KSIR64

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RATING AND CHARACTERISTIC CURVES
L13ESD5V0CC5-4
Figure 1. 8/20 us pulse waveform
according to IEC 61000-4-5
1000
100
10
TJ =25, tp (us) = 8/20 us
TJ =25ex,ptpon(uesn)tia=ll8y/2d0ecuasy waveform
exponentially decay waveform
1
1 10 100
Pulse Time (us)
1000
Figure 3. Power Dissipation versus Pulse Time
Figure 2. ESD pulse waveform
according to IEC 61000-4-2
1.2
0.8
0.4
0
0 25 50 75 100 125 150
Junction Temperature ()
Figure 4. Peak pulse power versus TJ
100.0
15
TJ =25, f=1MHz, Vosc=100mV
10 10.0
5
Any I/O pin to ground
0
0 1 23
Reverse Voltage (V)
4
Figure 5. Typical Junction Capacitance
5
1.0
0.1
25 50 75 100 125
Junction Temperature ()
Figure 6. Reverse Leakage Current versus TJ

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RATING AND CHARACTERISTIC CURVES
L13ESD5V0CC5-4
I/O1
+/-8KV
ESD Contact
discharge
V (i/o)
Figure 7. ESD Test Configuration
Figure 8. Clamped +8 kV ESD voltage waveform
Figure 9. Clamped -8 kV ESD voltage waveform

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Application Information
L13ESD5V0CC5-4
Data Line 1
Data Line 2
Data Line 3
Data Line 4
L13ESD5V0CC5-4
1 I/O 1 I/O 4 5
2 GND
3 I/O 2 I/O 3 4
Figure 10. L13ESD5V0CC5-4 ESD Protection Circuit

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RATING AND CHARACTERISTIC CURVES
L13ESD5V0CC5-4
Marking & Orientation
MC5
Packaging Information
DEVICE
Q'TY/REEL
(PCS)
L13ESD5V0CC5-4
3000
REEL DIA.
(INCH)
7
Q'TY/BOX Q'TY/CARTON
(PCS)
(PCS)
45000
90K/180K
SOT23-5L Soldering Pad Layout